Browsing by Author "Wang, Hong"

Now showing 1 - 2 of 2

Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
(2010-11-22)
Tsai, C. Y.
;
Lee, T. H.
;
Cheng, C. H.
;
Chin, Albert
;
Wang, Hong
We have fabricated the TaN-[SiO(2)-LaAlO(3)]-ZrON-[LaAlO(3)-SiO(2)]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si(3)N(4)-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 degrees C, under very fast 100 mu s and low +/- 16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As(+) implantation that was significantly better than those of control device without ion implantation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522890]
Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance
(2010)
Tsai, C. Y.
;
Lee, T. H.
;
Chin, Albert
;
Wang, Hong
;
Cheng, C. H.
Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125 degrees C and excellent 10(6) endurance at a fast 100 mu s and +/- 16 V program/erase. This is achieved using an As(+)-implanted higher. trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125 degrees C.