Browsing by Author "Wang, JY"

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A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
(2000-06-01)
Chang, KM
;
Deng, IC
;
Tsai, YP
;
Wen, CY
;
Yeh, SJ
new novel pretreatment technology for integration of organic low-dielectric material in copper interconnects for ultralarge scale integration applications is developed. Using NH3 plasma treatment, two extremely important advantages were achieved in spin-on organic polymer (SOP), including the reduction of copper diffusion and the improvement of ashing resistance. A copper/SOP/Si capacitor structure is used to study the electrical characteristics of SOP film after ashing treatment or postanneal. Higher barrier capability and better ashing resistance can be achieved by the SOP layer after NH3 plasma treatment. After annealing at 500 degrees C for 60 min, secondary ion mass spectroscopy depths profile shows that the Cu atoms do not penetrate into the SOP when they are pretreated by NH3 plasma. Furthermore after the ashing step, the carbon atoms in the SOP film almost remain the same when they are pretreated by NH3 plasma. On the other hand, the concentration of carbon in as-cured SOP is no longer seen. The reason of improving ashing resistance and better barrier capability was due to the organic polymer film rearranging to form a carbon-containing silicon nitride film. (C) 2000 The Electrochemical Society. S0013-4651(99)10-007-7. Ail rights reserved.
Controlling chaotic behavior of heavy to light hole mixing tunneling by external electric fields
(1997-08-01)
Juang, C
;
Wang, JY
;
Juang, J
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應用數學系
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Department of Applied Mathematics
Oscillatory and chaotic motion of heavy to light hole mixing tunneling in asymmetric coupled quantum-well structures can be controlled by an external electric field. Chaotic behavior occurs if the heavy-hole state in the first well is aligned with the light-hole state in the second well under a significant in-plane vector k(parallel to). Oscillatory motion is recovered if the external electric field disrupts the alignment between the heavy-hole state in the first well and the light-hole state in the second well.
Efficient diode-pumped actively Q-switched Nd : YAG/BaWO4 intracavity Raman laser
(2005-12-15)
Chen, YF
;
Su, KW
;
Zhang, HJ
;
Wang, JY
;
Jiang, MH
Barium tungstate (BaWO4) is employed to achieve efficient stimulated Raman scattering conversion in a compact diode-pumped actively Q-switched Nd:YAG laser. With an incident pump power of 9.2 W, 1.56 W of 1181 nm first-Stokes average output power was generated at a pulse repetition rate of 20 kHz, corresponding to an optical-to-optical conversion efficiency of 16.9%. (c) 2005 Optical Society of America
Electrical characteristics of polyoxide prepared by N-2 preannealing
(2000-01-01)
Chang, KM
;
Lee, TC
;
Wang, JY
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper reports on the electrical characteristics of polyoxide with preoxidation N-2 annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain. (C) 1999 The Electrochemical Society. S1099-0062(99)08-054-2. All rights reserved.
Fine-grained protein fold assignment by support vector machines using generalized npeptide coding schemes and jury voting from multiple-parameter sets
(2003-03-01)
Yu, CS
;
Wang, JY
;
Yang, JM
;
Lyu, PC
;
Lin, CJ
In the coarse-grained fold assignment of major protein classes, such as all-alpha, all-beta, alpha + beta, alpha/beta proteins, one can easily achieve high prediction accuracy from primary amino acid sequences. However, the fine-grained assignment of folds, such as those defined in the Structural Classification of Proteins (SCOP) database, presents a challenge due to the larger amount of folds available. Recent study yielded reasonable prediction accuracy of 56.0% on an independent set of 27 most populated folds. In this communication, we apply the support vector machine (SVM) method, using a combination of protein descriptors based on the properties derived from the composition of n-peptide and jury voting, to the fine-grained fold prediction, and are able to achieve an overall prediction accuracy of 69.6% on the same independent set-significantly higher than the previous results. On 10-fold cross-validation, we obtained a prediction accuracy of 65.3%. Our results show that SVM coupled with suitable global sequence-coding schemes can significantly improve the fine-grained fold prediction. Our approach should be useful in structure prediction and modeling. (C) 2003 Wiley-Liss, Inc.
Improvement of resolution by maximum entropy linear image restoration for NiSi2/Si interface
(1999)
Chen, FR
;
Kai, JJ
;
Chang, L
;
Wang, JY
;
Chen, WJ
A linear imaging constrained-maximum entropy method has been developed to extend the resolution from a series of defocused high-resolution images and one diffraction pattern. Our method is basically the Gerchberg-Saxton algorithm, which restores spatial information by imposing real space and Fourier space constraints cyclically. A constrained-maximum entropy method (constrained-MEM) was developed for real space constraints. This constrained-MEM finds an optimum solution of phases such that simulated images resemble the experimental image under some constraints in real space. These constraints include conservation of charge as well as a minimum of the chi(2) function, which is a measure of the level of satisfaction between simulated images and experimental images. For the Fourier space constraint, the square root intensities of diffraction spots were substituted. In this paper, we demonstrate that this method is able to extend the resolution from a series of high-resolution images and one diffraction pattern from a periodic NiSi2/Si interface. The atomic structure of the NiSi2/Si interface can be directly read out from the MEM image without a priori knowledge of the interface.