Browsing by Author "Wang, Kuang-Ming"

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Electric field simulation of the TBC-OTFTs with meshed source electrodes
(2007-01-01)
Zan, Hsiao-Wen
;
Wang, Kuang-Ming
;
Yen, Kuo-Hsi
;
光電工程學系
;
Department of Photonics
It was found that Fowler-Nordheim tunneling effect is the dominant mechanism for vertical channel organic thin film transistors with ultra short channel. In order to improve the device saturation characteristics and to lower down the leakage current, a new device structure with meshed source electrodes was introduced. By using Silvaco TCAD simulation, obvious fringing field effect was observed when the meshed source structure was used. The fringing field would suppress Fowler-Nordheim tunneling effect and improve the gate control ability. As a result, lower leakage current and better saturation characteristics could be obtained.
The channel length extension in poly-Si TFTs with LDD structure
(2008-09-01)
Zan, Hsiao-Wen
;
Wang, Kuang-Ming
;
光電工程學系
;
顯示科技研究所
;
Department of Photonics
In this letter, the resistance of the lightly doped drain (LDD) region in n-channel polycrystalline-silicon thin-film transistors (poly-Si TFTs) was analyzed. It was found that the LDD resistance was composed of an LDD-length-dependent part and a gate-bias-dominant part. The latter was located next to the gate edge and was governed by the channel extension phenomenon with an extended length of around 0.55 mu m under a 10-V gate bias. The current density distribution simulated by Silvaco ATLAS supported this severe fringing field effect. The influences of the gate bias, LDD doping level, gate oxide thickness, and LDD length on the channel extension are also investigated with Silvaco ATLAS simulation. This letter is the first report of long channel extensions in the LDD region of poly-Si TFTs. The result may significantly influence the device model in the short channel regime.