Browsing by Author "Wang, Lon A."

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A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio
(2016-04)
Fang, Xiang
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Lin, Chia-Ho
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Sun, Yung-Tai
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Chin, Huei-Tzu
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Zan, Hsiao-Wen
A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 x 10(-5) mA/cm(2) and high ON/OFF current ratio as high as 10(5). (C) 2016 Elsevier B.V. All rights reserved.
Solution-Processed Vertical Organic Transistors Fabricated by Nanoimprint Lithography
(2013-02-01)
Wu, Yang-Kai
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Huang, Jian-Hao
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Tsai, Wu-Wei
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Chen, Yung-Pin
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Lin, Shih-Chieh
In this letter, we demonstrate the first vertical-channel organic transistor using nanoimprint technology to produce a base electrode with high-density nanometer pores to well control the channel current vertically flowing through the pores. The aspect ratios of nanopores, which determine the switching performance of the vertical transistor, are greatly enhanced by transferring the nanostructure to the underlying layers. Without pore accumulation, a low leakage current can be achieved. The vertical transistor delivers an ON current of 0.35 mA/cm(2) and an ON/OFF current ratio of around 3000 at 1.8 V. The results prove the feasibility to produce low-voltage organic transistors over a large area with potentially low production cost.
Sub-100 nm ALD-assisted nanoimprint lithography for realizing vertical organic transistors with high ON/OFF ratio and high output current
(2014-12-01)
Hsu, Yung
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Fang, Xiang
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Wang, Lon A.
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Zan, Hsiao-Wen
;
Meng, Hsin-Fei
We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm(2)/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V. (C) 2014 Elsevier B.V. All rights reserved.