Browsing by Author "Wang, Shuai"

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High quality 10.6 mu m AIN grown on pyramidal patterned sapphire substrate by MOCVD
(2019-01-28)
Long, Hanling
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Dai, Jiangnan
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Zhang, Yi
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Wang, Shuai
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Tan, Bo
In this letter, we demonstrate a crack and strain free AlN epilayer with a thickness of 10.6 mu m grown on a pyramidal patterned sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of the X-ray rocking curve was 165/185 arcsec for (002)/(102) planes, respectively. The total threading dislocation density was less than 3 x 10(8) cm(-2). The dislocation evolution and the coalescence process were probed by transmission electron microscopy and scanning electron microscopy. A dual coalescence of the AlN epilayer was observed, which can effectively relax strain during the heteroepitaxy process. Owing to the approximately entire strain relaxation demonstrated by reciprocal space mapping and Raman shift, the surface morphology was crack-free and atomically smooth with a root-mean-square roughness of 0.14 nm. Temperature dependent Raman spectra showed the Raman linewidth of 4.3 cm(-1) at 300 K which was comparable to that of bulk AlN; it also demonstrated good crystalline quality of the AlN epilayer. Published under license by AIP Publishing.
Interface Anchored Effect on Improving Working Stability of Deep Ultraviolet Light-Emitting Diode Using Graphene Oxide-Based Fluoropolymer Encapsulant
(2018-03-07)
Liang, Renli
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Dai, Jiangnan
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Xu, Linlin
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Zhang, Yi
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He, Ju
The graphene oxide (GO)-based fluoropolymer is first proposed as an interface encapsulant to improve the light extraction efficiency and achieve the ultralong working stability of deep ultraviolet light-emitting diodes (DUV-LEDs), benefitting from its superior interface performance based on an anchored effect. For the GO-based fluoropolymer composite, the anchored structure is designed to effectively and tightly rivet the quartz lens on the DUV-LED chip by using the interface reaction between GO embedded in fluoropolymer and 3-aminopropyltriethoxy-silane grafted on the surfaces. Experimental results show that on the basis of the interface anchored effect, the air voids in the interface layer of DUV-LED are reduced by 84%, leading to an improvement of the light output power by 15% and a decrease of the junction temperature by 5%, by virtue of the sealing characteristics of the 0.10 wt % GO-based fluoropolymer. In addition, the steady working time is dramatically improved by 660% and it was attributed to the good interface anchored bonding of the 0.10 wt % GO-based fluoropolymer. This novel graphene oxide-based fluoropolymer is believed to provide a feasible and effective interface encapsulant to improve the performance of DUV-LEDs.
Synchrotron Radiation Soft X-ray Induced Reduction in Graphene Oxide Characterized by Time-Resolved Photoelectron Spectroscopy
(2015-06-11)
Lin, Chi-Yuan
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Cheng, Cheng-En
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Wang, Shuai
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Shiu, Hung Wei
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Chang, Lo Yueh
Synchrotron radiation soft X-ray was employed to reduce graphene oxide (GO) films in ultrahigh vacuum. The dissociation of oxygen-containing functional groups, and the formation of sp(2) C-C bonds were revealed by time-resolved in situ X-ray photoelectron spectroscopy, demonstrating the X-ray reduction of GO. The number of C-O bonds of G-O exhibited an exponential decay with exposure time. The X-ray reduction rate of G-O was positively correlated with the intensity of low-energy secondary electrons excited from substrates by soft X-ray, indicating the C-O bonds were dissociated by secondary electrons.
Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure
(2018-09-01)
Wang, Shuai
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Dai, Jiangnan
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Hu, Jiahui
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Zhang, Shuang
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Xu, Linlin
For the first time, an ultrahigh degree of optical polarization (DOP) of 81.8% in AlGaN-based deep ultraviolet LED (DUV-LED) operated at 286 nm has been experimentally demonstrated. The very high DOP was obtained by introducing the novel moth-eye microstructure fabricated on the backside of a sapphire substrate. Compared with conventional DUV-LED with a DOP of 64.7%, a significant 1.26-fold enhancement was obtained. It was worth mentioning that the DOP was accurately measured via self-built full spatial transverse electric (TE) and transverse magnetic (TM) mode light intensity test system, which was mainly composed of angle resolution bracket, Glan-Taylor prism, and spectrometer. For both TE and TM mode light, the extraction angle inside the semiconductor was extended from conventional (-26 degrees, 26 degrees), (-52 degrees, -41 degrees), (41 degrees, 52 degrees) to (-52 degrees, 52 degrees). Combined with finite difference time domain simulation, it was further confirmed that the novel moth-eye microstructure could notably weaken the total internal reflection at the sapphire/air interface and enlarge the light extraction angle. As a result, compared with the conventional one, DUV-LED with a moth-eye microstructure approximately doubled the light extraction efficiency.