Browsing by Author "Wen-Yen"

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Leakage current cut-off device for ternary content addressable memory
(2010-06-15)
Huang
;
Po-Tsang
;
Liu
;
Wen-Yen
;
Hwang
A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.
Super leakage current cut-off device for ternary content addressable memory
(2009-11-10)
Huang
;
Po-Tsang
;
Liu
;
Wen-Yen
;
Hwang
A super leakage current cut-off device for a ternary content addressable memory (TCAM) is provided. For various operations of the TCAM, the device uses the high-end and low-end power gating control transistors to turn on/off the don't-care cells to reduce the leakage current passing through the don't-care cells.