Browsing by Author "Weng, Peng-Hsiang"

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Characteristics of GaN-Based Photonic Crystal Surface Emitting Lasers with Central Defects
(2012)
Wu, Tzeng-Tsong
;
Weng, Peng-Hsiang
;
Hou, Yen-Ju
;
Lu, Tien-Chang
;
光電工程學系
The GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results. (c) 2011 Optical Society of America
GaN-based photonic crystal surface emitting lasers with central defects
(2011-11-28)
Wu, Tzeng-Tsong
;
Weng, Peng-Hsiang
;
Hou, Yen-Ju
;
Lu, Tien-Chang
;
光電工程學系
The GaN-based photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The threshold energy densities increased from 3.23 to 3.51 mJ/cm(2) when the central defect size increased. In addition, lasing wavelengths decreased from 400 nm to 390 nm due to the guided mode shifting phenomenon for the PCSEL cavities with larger central defects. The tendency of threshold gain and resonance wavelength for PCSELs with different central defects were calculated by the multiple scattering method and well matched to the experimental results. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665251]
Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method
(2012-11-01)
Weng, Peng-Hsiang
;
Wu, Tzeng-Tsong
;
Lu, Tien-Chang
;
光電工程學系
;
Department of Photonics
In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Gamma 1, K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results.
Threshold gain analysis in GaN-based photonic crystal surface emitting lasers
(2011-05-15)
Weng, Peng-Hsiang
;
Wu, Tzeng-Tsong
;
Lu, Tien-Chang
;
Wang, Shing-Chung
;
光電工程學系
We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary shapes have been fabricated and measured. The lasing mode at the G band edge of GaN-based PCSELs can be identified by using the angled resolved spectroscopy and matched well to the results calculated by MSM. Threshold conditions in the GaN-based PCSELs with different boundary shapes are obtained by optical pumping and agree well with simulation results. (C) 2011 Optical Society of America