Browsing by Author "Wu, JH"

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External failure pressure of a frangible laminated composite canister cover
(1999-12-01)
Kam, TY
;
Wu, JH
;
Wang, WT
;
機械工程學系
;
Department of Mechanical Engineering
The static failure strength of a frangible laminated composite canister cover subjected to uniform external pressure is studied via both theoretical and experimental approaches. The frangible canister cover, which is fabricated with four plate-like laminated composite parts, which is designed in such a way that it will fail in a predetermined pattern when subjected to an impulsive internal pressure and its external Failure pressure is much higher than its internal failure pressure. The stress distribution in the canister cover is determined using the finite element method and the failure of the cover identified on the basis of an appropriate failure criterion. A number of laminated composite canister covers were fabricated and subjected to static external pressure testing. The failure modes of the frangible covers are studied and the experimental results are used to verify the theoretical predictions. Close agreements between the experimental and theoretical results have been observed. The present study shows that the design of frangible covers with external failure pressure much higher than the internal failure pressure can be achieved. (C) 2000 Elsevier Science Ltd. All rights reserved.
Failure analysis of a frangible laminated composite canister cover
(1999)
Wu, JH
;
Wang, WT
;
Kam, TY
;
機械工程學系
;
Department of Mechanical Engineering
The static burst strength of a frangible laminated composite canister cover subjected to uniform pressure is studied via both theoretical and experimental approaches. The frangible canister cover, which is fabricated with four plate-like laminated composite parts, is designed to fail in a predetermined pattern. The stress distribution in the canister cover is determined using the finite element method and the failure of the cover is identified on the basis of a failure criterion. A number of laminated composite canister covers were fabricated and subjected to static burst pressure testing. The failure modes of the frangible covers are studied and the experimental results are used to verify the theoretical predictions. Close agreements between the experimental and theoretical results have been observed. The canister covers that had been tested did fail in accordance with the predetermined pattern.
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
(1996-05-15)
Wang, CJ
;
Feng, MS
;
Chan, SH
;
Chang, CY
;
Wu, JH
The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2-3. A sharp capacitance-voltage profile with a full width at half-maximum of 30 Angstrom was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 mu m and gate width of 50 mu m were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. (C) 1996 American Institute of Physics.
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
(1996-05-15)
Wang, CJ
;
Feng, MS
;
Chan, SH
;
Chang, CY
;
Wu, JH
The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2-3. A sharp capacitance-voltage profile with a full width at half-maximum of 30 Angstrom was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 mu m and gate width of 50 mu m were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. (C) 1996 American Institute of Physics.
Synthesis of microcrystalline silicon at room temperature using ICP
(2004)
Wu, JH
;
Shieh, JM
;
Dai, BT
;
Wu, YCS
;
材料科學與工程學系
Hydrogenated microcrystalline silicon (muc-Si:H) channel layers were synthesized at a temperature below 100degreesC by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP muc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 Angstrom/s, and a smooth roughness of similar to1 nm. Accordingly, the epitaxial growth of muc-Si:H films at room temperature is demonstrated. (C) 2004 The Electrochemical Society.