Browsing by Author "Wu, Jun"

Now showing 1 - 4 of 4

Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide
(2008-02-01)
Wu, Jun
;
Wang, Ying-Lang
;
Kua, Cheng-Tzu
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Precipitates were observed on the surface of fluorine-doped silicon oxide (SiOF) films. These precipitates are flake-type and hexagonal in shape, showing up rapidly after initiation, and clustered at the wafer center. Post-deposition N(2)O plasma treatment (post-plasma treatment) was found to be most effective in inhibiting the appearance of precipitates. In this paper, effects of post-deposition N(2)O plasma treatment on the suppression of precipitates and stabilities of SiOF film were studied. X-ray photoelectron spectroscopy (XPS) analyses were conducted to investigate the changes in surface composition of SiOF films after N(2)O plasma treatment. The surface morphology of the film was characterized by atomic force microscopy (AFM). Cross-sectional transmission electron microscopy (TEM) images showed that a surface layer of 150 A was generated after N(2)O plasma treatment. The changes on surface structures of SiOF films caused by N(2)O plasma treatment and the consequent inhibition of precipitate formation were discussed. (c) 2007 Elsevier Ltd. All rights reserved.
Evolution of Fluorine Content with Precipitate Formation in Fluorine-Doped Silicon Oxide
(2009-08-01)
Wu, Jun
;
Wang, Ying-Lang
;
Kuo, Cheng-Tzu
;
Pan, Fu-Ming
;
材料科學與工程學系
Precipitates appear on fluorine-doped silicon oxide (SiOF) film when the film surface is exposed to atmospheric air. They are flake-type and hexagonal-shaped and show up rapidly after initiation, clustered at wafer center. It was found that the onset of precipitation is closely related to fluorine concentration of SiOF films, those with higher fluorine content exhibit high propensity, of precipitation, along with more significant fluorine loss. In this study, the microstructural changes of SiOF films in the course of precipitation were examined. The Fourier transform infrared spectra of SiOF films showed the declined intensities of Si-F(n) (n = 1, 2) bonding peaks at time after the formation of precipitates. In the surface analysis by X-ray photoelectron spectroscopy, the binding energy of F 1s reduced similar to 0.5eV. after, precipitation, indicating also decreased Si-F(n) bonding on the surface layer of SiOF films. Meanwhile, analysis by thermal desorption spectroscopy indicated that the unstable fluorine content in the SiOF film is significantly reduced after precipitation. (C) 2009 The Japan Society of Applied Physics
Plasma treatment effects on hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition
(2008-02-01)
Wu, Jun
;
Wang, Ying-Lang
;
Kuo, Cheng-Tzu
;
材料科學與工程學系
;
Department of Materials Science and Engineering
When hydrogenated amorphous carbon (a-C:H) films are deposited by a radio frequency (RF; 13.56MHz) glow discharge system, their properties can be significantly affected by RF power input at deposition. Furthermore, the hydrogen content in the a-C:H films will be decreased in the postdeposition plasma treatment. This study investigated the effects of plasma input at deposition and postdeposition plasma treatment on the resulting film properties of a-C:H films. Atomic force microscopy (AFM) was employed to detect the surface roughness of the plasma-enhanced chemical vapor deposition (PECVD) a-C:H films. Raman spectroscopy was employed to determine the hydrogen concentration as well as the tetrahedral and trigonal bondings associated with C-H bond. The Raman analysis results Suggested the occurrence of a higher degree of structural order in the sp(2) lattice of the well plasma-treated a-C:H films. (c) 2007 Elsevier Ltd. All rights reserved.
The Dependence of the Performance of Strained NMOSFETs on Channel Width
(2009-11-01)
Yeh, Lingyen
;
Liao, Ming Han
;
Chen, Chun Heng
;
Wu, Jun
;
Lee, Joseph Ya-Min
The dependence of the performance of strained NMOSFETs on channel width was investigated. When the channel width was varied, the stress in the channel varied accordingly. This changed the electron effective mass and, consequently, the ON-state current I(on). By shrinking the channel width of a strained NMOSFET from 1 to 0.1 mu m and by keeping the channel length at 55 nm, the ON-state drain current per unit channel width was enhanced by 22%. The gate leakage current was also affected by the stress in the channel, which can be explained by the increase in hole barrier height at the Si/SiO(2) interface. Furthermore, when the film stress was increased by 1 GPa, the gate leakage current density J(g) of a strained NMOSFET with a channel width of 0.1 mu m and a length of 55 nm under a negative bias -3 V was reduced by 63%.