Browsing by Author "Wu, Tzung-Han"

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10-GHz highly symmetrical sub-harmonic Gilbert mixer using GaInP/GaAs HBT technology
(2007-05-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 10-GHz sub-harmonic Gilbert mixer is demonstrated using GaInP/GaAs hetero-junction bipolar transistor technology. The local oscillator (LO) signal time-delay path in the sub-harmonic LO stage is compensated using the fully symmetrical stacked-LO doubler; therefore, the balance of the sub-harmonic LO stage, the radio frequency to intermediate frequency isolation, and IIP2 are improved. The demonstrated 10-GHz sub-harmonic mixer achieves 10 dB conversion gain, IP1dB of -12 dBm, IIP3 of 2 dBm and IIP2 of 33 dBm.
10-GHz SiGeBiCMOS sub-harmonic Gilbert mixer using the fully symmetrical and time-delay compensated LO cells
(2007-02-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 mu m SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates subharmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1dB of -20 dBm, and IIP3 Of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.
2.4/5.7-GHz CMOS Dual-Band Low-IF Architecture Using Weaver-Hartley Image-Rejection Techniques
(2009-03-01)
Meng, Chin-Chun
;
Wu, Tzung-Han
;
Syu, Jin-Siang
;
Yu, Sheng-Wen
;
Tsung, Kuan-Chang
A 2.4/5.7-GHz dual-band Weaver-Hartley architecture, using 0.18-mu m CMOS technology, is demonstrated in this paper. The 2.4-GHz signal is set to be the image signal when the desired signal is at 5.7 GHz, and vice versa. Since the Weaver and Hartley systems are combined into this architecture, the demonstrated architecture rejects not only the first image signal, but also the secondary image signal. The image-rejection ratios of the first image signal and the secondary image signal are better than 40 and 46 dB, respectively. In this paper, a diagrammatic explanation is employed to obtain the image-rejection mechanisms of the Weaver-Hartley architecture.
2.4/5.7-GHz Dual-Band Dual-Conversion Architecture With Correlated LO Signal Generators
(2009)
Syu, Jin-Siang
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
Wu, Tzung-Han
;
Huang, Guo-Wei
A 2.4/5.7-GHz dual-band dual-conversion downconverter is demonstrated using 0.35-mu m SiGe hetero-junction bipolar transistor (HBT) technology. This downconverter employs a complex dual-conversion system and a complex filter to reject the first and second image signals, respectively. The LO(1) frequency is 2.5 times the LO(2) frequency and is generated by a divide-by-two divider, a frequency doubler and a single-sideband up-converter. As a result, the correlated LO signals maintain excellent image-rejection performance of the dual-conversion system while only one LO input is needed. The downconverter achieves a 40/39-dB image-rejection ratio of the first image and a 44/46-dB image-rejection ratio of the second image for 2.4/5.7-GHz modes, respectively.
5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer
(2007-02-01)
Meng, Chinchun
;
Wu, Tzung-Han
;
Wu, Tse-Hung
;
Huang, Guo-Wei
;
電信工程研究所
Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.
5.2/5.7-GHz 48-dB image rejection GaInP/GaAs HBT weaver down-converter using LO frequency quadrupler
(2006-11-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs heterojunction bipolar transistor (HBT) down-converter using the Weaver architecture is demonstrated in this paper. The Weaver system is a double-conversion image rejection heterodyne, system which requires no bandpass filters in the signal path and no quadrature networks. The Weaver down-converter has the image rejection ratios of 48 dB and 44 dB when the RF frequency is 5.2 GHz and 5.7 GHz, respectively. A new frequency quadrupler is employed in the down-converter to generate the local oscillator (LO) signals. The frequency quadrupler is designed to minimize the phase error when generating LO signals and thus the image rejection performance is improved. A diagrammatic explanation using the complex mixing technique to analyze the image rejection mechanism of the Weaver architecture is developed in this paper. From our analysis, the image rejection can be further improved by making the LO1 and LO2 signals coherent.
A 5 GHz RFIC single chip solution in GaInP/GaAs HBT technology
(2008-02-01)
Meng, Chin-Chun
;
Wu, Tzung-Han
;
電信工程研究所
;
Institute of Communications Engineering
Several high performance GaInP/GaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFIC) implemented by our research group are reviewed in this article. These demonstrated RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual-feedback wideband amplifiers, a broadband Gilbert down-conversion micromixer, Gilbert down-conversion mixers with polyphase filters for image rejection, a dual-conversion Weaver receiver, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs.
A 5.2 GHz 47 dB image rejection double quadrature Gilbert downconverter using 0.35 mu m SiGe HBT technology
(2007-02-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Huang, Guo-Wei
;
電信工程研究所
A 5.2 GHz 1 dB conversion gain, IP(1dB) = - 19 dBm and IIP(3)= -9dBm double quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using 0.35 mu m SiGe HBT technology. The image rejection ratio is better than 47 dB when LO=5.17 GHz and IF is in the range of 15 MHz to 45 MHz. The Gilbert downconverter has four-stage RC-CR IF polyphase filters for the image rejection. Polyphase filters are also used to generate LO and RF quadrature signals around 5 GHz in the double quadrature downconverter.
A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun
(2008-07-01)
Wu, Tzung-Han
;
Lin, Yi-Chen
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAS HBT technology. By using an on-chip active LO balun, the micromixer with the single-ended RF, LO, and IF ports is suitable for hybrid RF system applications. The port-to-port isolation has its best performance when the LO signal is balanced. The fully matched high-linearity micromixer has the conversion gain of 12dB, IP1dB of -9 dBm, IIP3 of 1 dBm when f(IF(input)) = 300 MHz, f(LO) = 3.5 GHz, and f(RF(output)) = 3.8 GHz. (C) 2008 Wiley Periodicals, Inc.
A high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.
A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology
(2006)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.
A monolithic SiGe heterojunction bipolar transistor gilbert upconverter with inductor-capacitor current mirror load and lumped-element rat-race balun
(2006-08-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Huang, Guo-Wei
;
電信工程研究所
A 5.2GHz upconversion Gilbert mixer with single-ended intermediate frequency (IF), local oscillator (LO), and RF ports is demonstrated using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The upconverter has a single-ended IF port. In addition, a lumped-element rat-race hybrid is inserted in the LO input stage to maintain balanced LO signals. The physics of the lumped-element rat-race is discussed in this paper. A passive LC current mirror is used to convert the mixer's differential outputs into a single-ended output and double the output current. The design methodology of the LC current mirror and a new approach to improve the power gain with the output buffer are developed in this paper. The fully matched Gilbert upconverter has the conversion gain of -1dB, OP1dB of -10dBm and OIP3 of 6dBm when input IF=300MHz, LO = 4.9GHz and output RF = 5.2GHz. The LO-IF isolation is -36dB and the LO-RF isolation is -39dB. The supply voltage is 3.3V, the current consumption is 11.5mA, and the die size is 0.98 x 0.83 mm(2) with six integrated on-chip inductors.
Analysis and Design of the 0.13-mu m CMOS Shunt-Series Series-Shunt Dual-Feedback Amplifier
(2009-11-01)
Wu, Tzung-Han
;
Syu, Jin-Siang
;
Meng, Chin-Chun
;
電子工程學系及電子研究所
;
電信工程研究所
This paper demonstrates the design methodology of the shunt-series series-shunt dual-feedback Meyer wideband amplifier. The small-signal S-parameters are obtained for the first time using the pole-and-zero analysis, thus giving the RF designers a detailed insight into the Meyer amplifier. A 10-GHz wideband amplifier is demonstrated in this paper, using 0.13-mu m CMOS technology to verify our design theory. The experimental results of the S-parameters highly agree with our theory.
Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO Balun
(2007)
Wu, Tzung-Han
;
Lin, Yi-Chen
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAs HBT technology. The RF, LO, and IF ports of the micromixer are all single-ended using the on-chip active LO balun. The port-to-port isolation has its best performance when the LO signal is balanced. The stand-along micromixer is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of 12 dB, IP(1dB) of -9 dBm, IIP(3) of 1 dBm when input IF=300 MHz, LO=3.5 GHz and output RF=3.8 GHz.
GaInP/GaAs HB broadband inductorless receiver
(2008-01-01)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.
GaInP/GaAs HBT sub-harmonic Gilbert mixers using stacked-LO and leveled-LO topologies
(2007-05-01)
Wu, Tzung-Han
;
Tseng, Sheng-Che
;
Meng, Chin-Chun
;
Huang, Guo-Wei
;
電信工程研究所
This paper discusses and demonstrates the most popular sub-harmonic Gilbert mixers in 2-mu m GaInP/GaAs HBT technology. High two local oscillators (2LO)-to-RF isolation is important to alleviate the self-mixing problem of the sub-harmonic mixer. The demonstrated GaInP/GaAs HBT stacked-local oscillator (LO) mixer topology has achieved the best 2LO-to-RF isolation when compared with the previous literature. On the other hand, the leveled-LO sub-harmonic mixers have advantages in terms of the high speed and low dc supply voltage at the cost of much larger LO pumping power. Among all the structures, the bottom-LO sub-harmonic mixer has the lowest current consumption and the simplest circuit structure at the expense of the 2LO-to-RF isolation.
Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
(2007)
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
;
Institute of Communications Engineering
A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
Kukielka and Meyer Wideband Dual Feedback Amplifiers Using GaInP/GaAs HBT Technology
(2009)
Syu, Jin-Siang
;
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電信工程研究所
GaInP/GaAs HBT inductorless wideband amplifiers using shunt-series shunt-shunt dual-feedback topology (Kukielka topology) and shunt-series series-shunt dual-feedback topology (Meyer topology) are demonstrated in this paper. Three amounts of feedback are applied on each topology. At the high gain mode, the Kukielka/Meyer wideband amplifier achieves the small-signal power gain of 30/27 dB with the 3-dB bandwidth of 6 GHz at a 5-V supply. The noise figure of both amplifiers is lower than 3 dB within 6 GHz. Increasing the amount of feedback widens the bandwidth at the cost of power gain and noise figure degradation.
LOW-NOISE GaInP/GaAs HBT WIDEBAND DUAL FEEDBACK AMPLIFIERS USING KUKIELKA AND MEYER TOPOLOGIES
(2010-07-01)
Syu, Jin-Siang
;
Wu, Tzung-Han
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
GaInP/GaAs HBT inductorless wideband amplifiers using shunt-series shunt-shunt dual-feedback topology (Kukielka topology) and shunt-series series-shunt dual-feedback topology (Meyer topology) are demonstrated in this article. Three amounts of feedback are applied on each topology. At the high-gain mode, the Kukielka/Meyer wideband amplifier achieves the small-signal power gain of 30127 dB with the 3-dB bandwidth of 6 GHz at a 5 V supply. The noise figure of both amplifiers is lower than 3 dB within 6 GHz. To increase the amount of feedback widens the bandwidth at the cost of power gain and noise figure degradation. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1486-1489, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25280