GaInP/GaAs HB broadband inductorless receiver

Abstract

A GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.