Browsing by Author "Wu, You-Lin"

Now showing 1 - 5 of 5

Comparison of Multiple-Polysilicon-Nanowire pH-Sensors Coated with Different ALD-Deposited High-k Dielectric Materials
(2011)
Hsu, Po-Yen
;
Wu, Chun-Yu
;
Cheng, Huang-Chung
;
Wu, You-Lin
;
Chang, Wei-Tzu
Multiple poly-silicon nanowires (PS-NW\'s) coated with different high-k dielectric materials, HfO2, Al2O3, and TiO2, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW\'s fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (gamma-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO2 exhibits the highest sensitivity and best reproducibility for pH sensing.
High Sensitivity of Dry-Type Nanowire Sensors With High-k Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Technique
(2012-09-01)
Cheng, Huang-Chung
;
Wu, Chun-Yu
;
Hsu, Po-Yen
;
Wang, Chao-Lung
;
Liao, Ta-Chuan
Dry-type poly-Si nanowire pH sensors with high-k dielectrics have been demonstrated with the aid of novel focus ion beam engineered capillary atomic force microscopy (C-AFM) tip. By means of this C-AFM tip coating technique, the relatively few testing solutions can be transferred onto the surface of a nanowire, preventing the sensor device from the immersion in the liquid and therefore suppressing the possible leakage current from the testing solution. As compared with the TEOS SiO2, the pH sensors comprising Al2O3, TiO2, and HfO2 high-k materials exhibit the better sensitivities due to their enhanced capacitances. The best sensitivity (138.7 nA/pH) and linearity (99.69%) for a HfO2 dielectric can be ascribed to the higher k value and larger bandgap with respect to the Al2O3 and TiO2, accordingly. Consequently, the C-AFM tip coating technique incorporating with HfO2 dielectric suggests the potential for the detection of a minute quantity of biomedicines.
Polysilicon Nanowire Sensor Devices Based on High-k Dielectric Membrane for pH Sensing and DNA Detection
(2012)
Wu, Chun-Yu
;
Hsu, Po-Yen
;
Wang, Chao-Lung
;
Liao, Ta-Chuan
;
Cheng, Huang-Chung
The pH sensing characteristics of poly-Si nanowires with high-k sensing membranes are investigated. As a result, the sensing membrane of HfO2 exhibits higher sensitivity and better reproducibility test as compared with TEOS SiO2, Al2O3, TiO2 films. The sensor device with HfO2 dielectric membrane reveals a great pH sensitivity of 172.8 nA/pH. In additon, the label-free DNA detection ability of the poly-Si nanowires is also demonstrated. The 10-base-long single-strained homopolymers DNA molecule solution with an ultra-low concentration of 0.01nM can be detected by using HfO2 sensing film. Such a poly-Si nanowires structure with HfO2 sensing membrane is very suitable for future biochemical sensors applications.
Study of low-temperature and post-stress hysteresis in high-k gate dielectrics
(2007-01-01)
Wu, You-Lin
;
Lin, Shi-Tin
;
Yang, Chang Cheng
;
Wu, Chien-Hung
;
Chin, Albert
In this work, we present the comparison of hysteresis behaviors of HfAlON and HfSiON high-k dielectrics at low-temperature and subjected to constant voltage stress (CVS). The V-FB instability in the HfAlON and HfSiON gate dielectric were deeply studied. A model is proposed to explain the V-FB Shift and hysteresis direction in thus two samples. We also treat the CVS voltage and CVS time dependence of hysteresis and V-FB Shift. The decreasing hysteresis with temperature is ascribed to traps generation/recombination rate reduction at low temperature.
Study of low-temperature and post-stress hysteresis in high-k gate dielectrics
(2007)
Wu, You-Lin
;
Lin, Shi-Tin
;
Yang, Chang Cheng
;
Wu, Chien-Hung
;
Chin, Albert