Browsing by Author "Wu, Yung-Hsien"

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Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application
(2016-03)
Chen, Po-Chun
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Wu, Yung-Hsien
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Zheng, Zhi-Wei
;
Chiu, Yu-Chien
;
Cheng, Chun-Hu
In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of >10(4), a threshold voltage of -1.05 V, and a field-effect mobility of 2.14 cm(2).V-1.s(-1). By increasing the exposure time of oxygen plasma, excess oxygen was incorporated to thin-oxide channel and converted thin monoxide to oxygen-rich n-type thin dioxide, which in turn led to n-type operation. It indicated that oxygen plasma was the critical factor to determine oxygen concentration, oxygen vacancies, metal ions and channel polarity. This proposed oxygen-content tuning through plasma treatment approach shows great promise in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.
High-performance SrTiO3 MIM capacitors for analog applications
(2006-09-01)
Chiang, K. C.
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Huang, Ching-Chien
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Chen, G. L.
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Chen, Wen Jauh
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Kao, H. L.
TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.
Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
(2017-06-15)
Chen, Po-Chun
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Chiu, Yu-Chien
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Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Wu, Yung-Hsien
This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 x 10(6), a field-effect mobility of 2.13 cm(2) V-1 s(-1), a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications. (C) 2016 Elsevier B.V. All rights reserved.
P-type tin-oxide thin film transistors for blue-light detection application
(2016-12)
Chen, Po-Chun
;
Chiu, Yu-Chien
;
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Wu, Yung-Hsien
We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (I-light/I-dark) of 8.2 x 10(3) at a very low driven voltage of < 3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
P-type tin-oxide thin film transistors for blue-light detection application
(2016-12)
Chen, Po-Chun
;
Chiu, Yu-Chien
;
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Wu, Yung-Hsien
We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (I-light/I-dark) of 8.2 x 10(3) at a very low driven voltage of < 3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment
(2017-02)
Chen, Po-Chun
;
Chiu, Yu-Chien
;
Liou, Guan-Lin
;
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-dopedSnO channel layer. The effects of the fluorine plasma treatment were also investigated. By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58x10(6) and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO2 interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays.