Browsing by Author "Xue, Fei"

Now showing 1 - 7 of 7

Anisotropic superconductivity induced by periodic multiferroic domain patterns
(2019-12-06)
Huang, Yen-Lin
;
Huang, Bo-Chao
;
Wang, Yan-Ting
;
Xue, Fei
;
Lin, Jheng-Cyuan
The competition between order parameters, such as ferroelectricity, ferromagnetism, and superconductivity, is one of the most fascinating topics in condensed matter physics. Here, we report intriguing anisotropic superconductivity in YBa2Cu3O7-x films induced by a multiferroic, BiFeO3, with periodic domain patterns. The anisotropic superconductivity was investigated by transport measurements and supported by phase-field simulations, and then the detailed local electronic structures were revealed by cross-sectional scanning tunneling microscopy. We found that the oxygen redistribution in YBa2Cu3O7-x modulated by the ferroelectric polarization in BiFeO3 was the key mechanism driving this anisotropic superconductivity. The presented heteroarchitecture of a high-temperature superconductor and a domain-engineered multiferroic provides a new approach to tune superconductivity and offers potential advantages for the design of future multifunctional devices.
Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures
(2016-02-03)
Ju, Changcheng
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Yang, Jan-Chi
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Luo, Cheng
;
Shafer, Padraic
;
Liu, Heng-Jui
Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory
(2013)
Chang, Yao-Feng
;
Chen, Ying-Chen
;
Li, Ji
;
Xue, Fei
;
Wang, Yanzhen
Microscopic theory of equilibrium polariton condensates
(2016-12-02)
Xue, Fei
;
Wu, Fengcheng
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Xie, Ming
;
Su, Jung-Jung
;
MacDonald, A. H.
We present a microscopic theory of the equilibrium polariton condensate state of a semiconductor quantum well in a planar optical cavity. The theory accounts for the adjustment of matter excitations to the presence of a coherent photon field, predicts effective polariton-polariton interaction strengths that are weaker and condensate exciton fractions that are smaller than in the commonly employed exciton-photon model, and yields effective Rabi coupling strengths that depend on the detuning of the cavity-photon energy relative to the bare exciton energy. The dressed quasiparticle bands that appear naturally in the theory provide a mechanism for electrical manipulation of polariton condensates.
Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3
(2018-05-01)
Xue, Fei
;
Zhang, Junwei
;
Hu, Weijin
;
Hsu, Wei-Ting
;
Han, Ali
Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer alpha-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk alpha-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d(33) piezoelectric coefficient of alpha-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd even effect. In addition, we also demonstrate a type of alpha-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in alpha-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain tunable electronics/optoelectronics.
Permanent ferroelectric retention of BiFeO3 mesocrystal
(2016-10-26)
Hsieh, Ying-Hui
;
Xue, Fei
;
Yang, Tiannan
;
Liu, Heng-Jui
;
Zhu, Yuanmin
Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.
Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit
(2018-12-12)
Xue, Fei
;
Hu, Weijin
;
Lee, Ko-Chun
;
Lu, Li-Syuan
;
Zhang, Junwei
2D ferroelectric material has emerged as an attractive building block for high density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking alpha-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal alpha-In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (approximate to 1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H alpha-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.