Browsing by Author "YANG, JJ"

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A NEW APPROACH TO MODELING THE SUBSTRATE CURRENT OF PRESTRESSED AND POST-STRESSED MOSFETS
(1995-06-01)
YANG, JJ
;
SHAOSHIUN, S
;
CHOU, PC
;
CHEN, CH
;
LIN, MS
In this paper, we propose a closed form expression of a new and accurate analytical substrate current model for both pre-stressed and post-stressed MOSFET's, It was derived based on the concept of effective electric field, which gives a more reasonable impact ionization rate in the lucky-electron model, This effective electric field, composed by two experimentally determined parameters, ran be regarded as a result of nonlocal heating effects within de,ices, This model shows a significant improvement to the conventional local field model. One salient feature of the present model is that it allows us to characterize the time evolution of the substrate current of stressed MOSFET's for the first time. Experimental verification for a wide variety of MOSFET's with effective channel lengths down to 0.3 mu m shows that the new model is very accurate and is feasible for any kind of MOS device with different drain structures, The present model can be applied to explore the hot carrier effect in designing submicrometer MOS devices with emphasis on the design optimization of a device drain engineering issue, In addition, the present model is well suited for device reliability analysis and circuit level simulations.
A UNIFIED 3-D MOBILITY MODEL FOR THE SIMULATION OF SUBMICRON MOS DEVICES
(1993-04-01)
YANG, JJ
;
CHUNG, SSS
;
CHANG, CH
;
LEE, GH
;
電子工程學系及電子研究所
A calibrated and physically based mobility model is developed for three-dimensional simulation of submicron metal-oxide-semiconductor (MOS) devices, in which the inversion layer mobility is emphasized. This inversion layer mobility can be generalized into a local form, i.e., expressed as functions of the local electric field at each grid point, so that it is well suited for device simulation. The resulting 3-D mobility model accurately characterizes the significant physical scattering effects including the Coulomb screening effect, quantum channel broadening effect, surface roughness scattering, structure-induced lateral surface scattering and velocity saturation limited effects. Results show that this new model can be incorporated into device simulators for accurately predicting drain currents of submicron LDD MOS devices. Moreover, the results compare more favorably with the experimental data than do those for other reported models.
Accurate MOS device hot carrier models for VLSI reliability simulation
(1995)
CHUNG, SS
;
YANG, JJ
;
SU, JS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics