Browsing by Author "YANG, SJ"

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A NEW SWITCH-CURRENT INTEGRATION READOUT STRUCTURE FOR INFRARED FOCAL PLANE ARRAY
(1994)
HSIEH, CC
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WU, CY
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JIH, FW
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SUN, TP
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YANG, SJ
ANOMALOUS DIFFUSION OF CD IN INSB
(1990-03-01)
TU, SL
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HUANG, KF
;
YANG, SJ
;
電子物理學系
;
光電工程學系
FIELD-INDUCED JUNCTION IN INSB GATE-CONTROLLED DIODES
(1991-01-01)
LAN, WH
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TU, SL
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CHERNG, YT
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PANG, YM
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YANG, SJ
InSb gate-controlled diodes were fabricated to study breakdown behavior and surface effects. I-V characteristics were measured as a function of gate voltage and temperature. The results indicated that a field-induced junction was formed as the negative bias exceeded -4 V. The field induced junction was found to have a breakdown voltage smaller than that of the metallurgical junction. Saturation of the breakdown current in the field-induced junction was also observed, which could be explained by the conducting channel effect similar to that in the metal oxide semiconductor field effect transistor (MOSFET). The reverse current was also measured as a function of temperature to study the leakage mechanism. The strong exponential temperature dependence suggested that the reverse current was dominated by the G-R mechanism.
GROWTH AND CHARACTERIZATION OF BI12(SI1-XTIX)O20 MIXED-CRYSTALS
(1993-06-01)
YEH, TS
;
HU, LJ
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TU, SL
;
YANG, SJ
;
HSU, SE
Crystal growth of a sillenite structure with a composition of Bi12(Si1-xTix)O20 and the corresponding optical characteristics have been systematically examined. The incongruent melting materials Bi12TiO20(BTO) have been observed to form a solid solution with congruent melting materials Bi12SiO20(BSO) for the whole range of the x value. The cutoff wavelength increases and the optical activity decreases linearly with BTO content in the crystals. The photorefractive effect is modified significantly due to the addition of BTO. The diffraction efficiency (eta) of the photorefractive grating increases first with BTO content for x less-than-or-equal-to 0.33 and saturates for a larger amount of BTO addition. The response speed is, however, promoted markedly for x greater-than-or-equal-to 0.48.
GROWTH AND FERROELECTRICITY OF EPITAXIAL-LIKE BATIO3 FILMS ON SINGLE-CRYSTAL MGO, SRTIO3, AND SILICON SUBSTRATES SYNTHESIZED BY PULSED-LASER DEPOSITION
(1995-06-15)
LIN, WJ
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TSENG, TY
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LU, HB
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TU, SL
;
YANG, SJ
GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
(1995-05-15)
LIN, WJ
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TSENG, TY
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LIN, SP
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TU, SL
;
YANG, SJ
Epitaxial-like (Sr0.5Ba0.5)Nb2O6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO2 as the buffer layer and [001]YBa2Cu3O7-x (YBCO) as the base electrode. The theta-2 theta scan and phi-scan X-ray diffraction suggest that [210](SBN)//[100](YBCO)//[110]CeO2//[110](si). The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO2/Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization (P-r) and coercive field (E(c)) are, respectively, P-r = 27.2 mu C/cm(2) and E(c) = 24.8 kV/cm.
HIGH BREAKDOWN P-CHANNEL INSB MOSFET
(1990-03-01)
TU, SL
;
LAN, WH
;
CHIOU, TS
;
YANG, SJ
;
HUANG, KF
INFRARED SPECTROSCOPIC STUDY OF MERCURY-SENSITIZED PHOTO-CVD SILICON-OXIDE
(1990-06-01)
LAN, WH
;
TU, SL
;
YANG, SJ
;
HUANG, KF
;
電子物理學系
INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR
(1989-11-01)
TU, SL
;
HUANG, KF
;
YANG, SJ
;
電子物理學系
;
光電工程學系
OPTIMIZATION OF DEPOSITING Y1BA2CU3O7-DELTA SUPERCONDUCTING THIN-FILMS BY EXCIMER LASER ABLATION WITH CO2 LASER-HEATED SUBSTRATES
(1992-06-01)
WU, KH
;
JUANG, JY
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LEE, CL
;
LAI, TC
;
UEN, TM
The optimum deposition conditions for growing Y1Ba2Cu3O7-delta superconducting thin films in situ by using xenon, Nd:YAG, and KrF excimer lasers with CO2 laser-heated substrates were studied. The dependences of the T(c0) and microstructure of the films on the deposition parameters such as substrate temperature, oxygen partial pressure, laser energy density and repetition rates have been investigated systematically. It was found that both the surface mobility on the substrate and the reaction temperatures for the particulates arriving at the substrates are the key factors for obtaining high-quality films. High-quality Y1Ba2Cu3O7-delta thin films with mirror-like surface morphology, T(c0) almost-equal-to 90 K, and nearly perfect c-axis oriented normal to the film surface were routinely grown in situ on SrTiO3 substrates with the following deposition conditions: substrate temperature at 670-degrees-C, oxygen partial pressure of 0.1 torr, laser energy density of 4 J/cm2 per pulse, and repetition rate of 10 Hz. More significantly, it took only about 3 min to grow a 0.3-mu-m thick film and less than 50 s to cool down the film to room temperature after deposition by the present process. Subsequent processes, such as slow cooling in oxygen atmosphere or any further heat treatments, were unnecessary for the present process. The unique advantage of the present process further offered us good opportunities to delineate the effects of each deposition parameter on the detailed film growth mechanisms without having to deal with the complications introduced by prolonged post-deposition treatments. The details of all the interesting features observed will be presented and their physical implications will be discussed.
REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE
(1993-01-01)
LAN, WH
;
LIN, WJ
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TU, SL
;
YANG, SJ
;
HUANG, KF
The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.
SHIFT-INVARIANT PHOTOREFRACTIVE JOINT-TRANSFORM CORRELATOR USING FELINBO3 CRYSTAL PLATES
(1993-06-10)
HE, QB
;
YEH, P
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HU, LJ
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LIN, SP
;
YEH, TS
We report the results of our experimental investigation on a shift-invariant photorefractive image correlator that uses a thin crystal plate of Fe:LiNbO3, which operates in the Raman-Nath regime of diffraction.