Browsing by Author "YANG, YC"

Now showing 1 - 5 of 5

A PRECISION EXPERIMENT ON ELECTRONS, PHOTONS AND MUONS AT LHC
(1993-02-01)
AZIZ, T
;
BOCK, R
;
BRAUNSCHWEIG, W
;
GEULIG, E
;
HILGERS, K
We describe the upgrade of the L3 detector for running at LHC. The principle goals are the precise measurement of electrons, photons and muons.
EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORS
(1993-10-01)
YEH, CF
;
YANG, TZ
;
CHEN, CL
;
CHEN, TJ
;
YANG, YC
Poly-Si thin-film transistors (TFT's) have a large off -state current that is unacceptable for pixel river application. To quickly establish an effective solution to reduce the off-state current, systematic comparison and clarification of the mechanisms of off-state current are still insufficient. We will concentrate on an experimental comparison of off -state current mechanisms between low-temperature-processed (LTP) and high-temperature-processed (HTP) poly-Si TFT devices. Since all the off-state currents are found to be divided into three regions in LTP and HTP poly-Si TFT's, they are attributable to a resistive current in region I (low gate bias), pure thermal generation in region II (low drain bias) and Frenkel-Poole emission in region III (high gate bias, drain bias).
LOW-TEMPERATURE-PROCESSED POLY-SI THIN-FILM TRANSISTORS USING SOLID-PHASE-CRYSTALLIZED AND LIQUID-PHASE-DEPOSITED GATE OXIDE
(1994-04-01)
YEH, CF
;
CHEN, CL
;
YANG, YC
;
LIN, SS
;
YANG, TZ
Poly-Si thin-film transistor (TFT) devices using solid-phase-crystallized and liquid-phase-deposited gate oxide are, for the first time, realized by low-temperature processes (LTP) (<625-degrees-C) for future LCDs and 3-D integrated circuits. The method of liquid-phase deposition of SiO2 (LPD-SiO2) is described. The physical, chemical and electrical properties of the new dielectric layer are clarified. The TFT (W/L = 200 mum/10 mum) having an on-off current ratio of 10(6) at V(D) = 5 V, a field-effect mobility of 15 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 5.6 V, and a subthreshold swing of 1.6 V/decade, exhibits sufficient performance for pixel transistors. The field-effect mobility is strongly dependent on channel length. Effective passivation of defects by plasma hydrogenation will be very essential to achieve higher performance.
NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
(1993-08-01)
YEH, CF
;
LIN, SS
;
CHEN, CL
;
YANG, YC
;
電控工程研究所
A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD).
PERFORMANCE AND OFF-STATE CURRENT MECHANISMS OF LOW-TEMPERATURE PROCESSED POLYSILICON THIN-FILM TRANSISTORS WITH LIQUID-PHASE DEPOSITED SIO2 GATE INSULATOR
(1994-02-01)
YEH, CF
;
LIN, SS
;
YANG, TZ
;
CHEN, CL
;
YANG, YC
Polysilicon thin-film transistors (poly-Si TFT's) with liquid phase deposition (LPD) silicon dioxide (SiO2) gate insulator were realized by low-temperature processes (< 620-degrees-C). The physical, chemical, and electrical properties of the new dielectric layer were clarified. The low-temperature processed (LTP) polylayer TFT's with W/L = 200 mum/10 mum had an on-off current ratio of 4.95 x 10(6) at V(D) = 5 V, a field effect mobility of 25.5 cm2/V.s at V(D) = 0.1 V, a threshold voltage of 6.9 V. and a subthreshold swing of 1.28 V/decade at V(D) = 0.1 V. Effective passivation of defects by plasma hydrogenation can improve the characteristics of the devices. The off-state current (I(L)) mechanisms of the tTP poly-Si TFT's were systematically compared and clarified. The I(L) is divided into three regions; the I(L) is attributable to a resistive current in region I (low gate bias), to pure thermal generation current in region II (low drain bias), and to Frenkel-Poole emission current in region III (high gate bias and drain bias).