Browsing by Author "YEN, PW"

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BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING
(1995-02-20)
YEH, CF
;
CHEN, CL
;
LUR, W
;
YEN, PW
;
電子工程學系及電子研究所
NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATES
(1993-09-15)
CHENG, HC
;
CHEN, YE
;
JUANG, MH
;
YEN, PW
;
LIN, L
Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and n+-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the n+-Si substrate and the lower effective surface donor concentration.