Browsing by Author "Yang"

Now showing 1 - 5 of 5

Fast bit allocation method for audio coding
(2008-02-05)
Yang
;
Cheng-Han
;
Hang
;
Hsueh-Ming
A fast bit allocation algorithm for audio coding is disclosed. A virtual Huffman codebook model is referred in a trellis-based optimization approach to obtain a set of optimized scale factors, and then the set of optimized scale factors is referred in a trellis-based optimization approach to obtain a set of optimized Huffman codebooks. Therefore, the present invention can significantly reduce the amount of computation for the bit allocation. Further, according to the experimental data, the present invention can keep almost the same compression efficiency as the prior art JTB optimization. Hence, the present invention is more suitable for practical applications.
Fast motion estimation using N-queen pixel decimation
(2006-04-11)
Wang
;
Chung-Neng
;
Yang
;
Shin-Wei
;
Liu
The present invention proposes a fast motion estimation using N-queen pixel decimation, whereby after a reference block and a block to be processed are selected in a video sequence, an N×N queens pattern is used for pixel decimation to perform block match, thereby obtaining a good enough block difference value. The present invention combines pixel decimation with fast motion estimation for search points reduction to achieve the object of simplifying computational complexity of motion estimation. Therefore, the present invention can sieve out sufficiently representative pixels and will not increase extra computational complexity.
Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer
(2007-08-21)
Chang
;
Edward Y.
;
Luo
;
Guangli
;
Yang
This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD).The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as Si0.1Ge0.9in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si01.Ge0.9due to the large mismatch between this layer and Si substrate.Furthermore, a subsequent 0.8 μm Si0.05Ge0.95layer, and/or optionally a further 0.8 μm Si0.02Ge0.98layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaxial layers.Finally, a GaAs epitaxial layer is grown on said Ge film by using MOCVD.
Power controlling apparatus applied to biochip and operating method thereof
(2009-11-24)
Wu
;
Chung-Yu
;
Lin
;
Po-Kang
;
Lin
The invention discloses a power controlling apparatus for a biochip including M regions. Each region includes a plurality of cells respectively. The power controlling apparatus includes a pulse generating module, a combinational circuit, and M controlling modules. The pulse generating module generates a pulse. The combinational circuit receives the pulse and generates M controlling signals. Each controlling signal has a predetermined phase which is different from the phase of the other controlling signal. The M controlling modules are electrically connected to the combinational circuit. Each of the M controlling signals corresponds to and activates one of the M controlling modules to selectively power on one corresponding region of the M regions. The cells in the corresponding region which is powered have an action potential refractory time that is longer than the power-on interval of the corresponding region.
Welding flux for use in arc-welding of stainless steels, method of welding stainless steel members using the welding flux
(2006-05-30)
Chou
;
Chang-Pin
;
Huang
;
Her-Yueh
;
Shyu
A welding flux for use in welding stainless steel parts to increase welding penetration, consisting essentially a base material obtained from manganese peroxide (MnO2), and an activator selected from a material group that includes zinc oxide (ZnO), silicon dioxide (SiO2), chromium oxide (CrO2), titanium dioxide (TiO2), molybdenum dioxide (MoO2), and iron oxide (Fe2O2).