Browsing by Author "Yang, Shan-Chun"

Now showing 1 - 6 of 6

An Ultra-Fast Temporary Bonding and Release Process Based on Thin Photolysis Polymer in 3D Integration
(2015)
Tsai, Tsung-Yen
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Lin, Chien-Hung
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Lee, Chia-Lin
;
Yang, Shan-Chun
;
Chen, Kuan-Neng
An ultra-fast temporary bonding and release process was investigated for the improvement of 3D integration. The bonding scheme composes of two different kinds of polymer for release layer and adhesive layer. The submicron release layer is a positive photoresist with the characteristic of high UV absorption induced into the de-bonding procedure within 20 s. In addition, the adhesive layer provides robust mechanical strength for the wafer thinning process. Based on results, this structure is a potential candidate for temporary bonding and de-bonding technique in 3D integration.
Characterization of Temporary Bonding and Laser Release Using Polyimide and a 300-nm Photolysis Polymer System for High-Throughput 3-D IC Applications
(2017-03)
Cheng, Chuan-An
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Tsai, Tsung-Yen
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Huang, Yu-Hsiang
;
Lin, Chien-Hung
;
Lee, Chia-Lin
A new temporary bonding technology with an ultrafast laser-release process of less than 20 s is presented, where a 300-nm-thick photolysis polymer and polyimide are served as the release layer and adhesive layer, respectively. The submicrometer-thick polymer has the feature of high absorption of a 355-nm laser in contrast to polyimide during debonding procedures. In addition, the thin release layers of high chemical resistance and mechanical strength demonstrate their feasibility for handling process. Electrical characteristics of the devices before and after the laser-release process are investigated, showing no degradation. Thus, this technology scheme demonstrates its potential for temporary bonding and release in 3-D integration applications.
Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme
(2017-03-01)
Cheng, Chuan-An
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Huang, Yu-Hsiang
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Lin, Chien-Hung
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Lee, Chia-Lin
;
Yang, Shan-Chun
A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 degrees C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.
Study of a Novel Amorphous Silicon Temporary Bonding and Corresponding Laser Assisted De-bonding Technology
(2016)
Huang, Yu-Hsiang
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Liang, Hao-Wen
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Cheng, Chuan-An
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Lin, Chien-Hung
;
Lee, Chia-Lin
A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with alpha-IGZO thin-film transistor are shown at the bonding temperature of 210 degrees C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance. Laser ablated amorphous silicon is proved stable and ultra-fast. Advantages of excellent bonding quality, lower cost and higher throughput demonstrate that this scheme can be a potential candidate in 3D integration platform.
The Influence of Device Morphology on Wafer-Level Bonding with Polymer-Coated Layer
(2016-01-01)
Liang, Hao-Wen
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Chen, Hsiu-Chi
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Lin, Chien-Hung
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Lee, Chia-Lin
;
Yang, Shan-Chun
Thetolerance of device morphology in wafer-level bonding through polymer-coated layer was investigated for the application of 3D integration. Several different pillar heights were fabricated on wafers to simulate the case of bonding with real devices on wafers. Overall, the wafer morphology with polymer-coated layer above devices less than 2 mu m can achieve excellent bonding quality. Furthermore, undamaged carrier wafers can be obtained after laser-assisted de-bonding technology, and post clean treatment. Based on bonding results, this research can provide a practical concept on device morphology for polymer-based temporary wafer-level bonding in 3D integration.
Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application
(2016)
Cheng, Chuan-An
;
Huang, Yu-Hsiang
;
Lin, Chicn-Hung
;
Lee, Chia-Lin
;
Yang, Shan-Chun
A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.