Browsing by Author "Yang, Ting-Hsin"

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Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates
(2020-04-01)
Yang, Ting-Hsin
;
Su, Chun-Jung
;
Wang, Yu-Shun
;
Kao, Kuo-Hsing
;
Lee, Yao-Jen
In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer, treatment exhibit the two distinct remnant polarization (P-r), Secondly the device with a larger P-r shows a higher gate leakage current and smaller time-to-breakdown (t(BD)) compared to the device with a smaller P-r. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large P-r shows a lower extrapolated operating voltage. However more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large P-r still can be obtained. (C) 2020 The Japan Society of Applied Physics
Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing
(2020-04-01)
Chen, Yi-Hsuan
;
Su, Chun-Jung
;
Yang, Ting-Hsin
;
Hu, Chenming
;
Wu, Tian-Li
This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf0.5Zr0.5O2 (HZO) technologies by using the NH3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH3 plasma IL treatment and MWA, and NH3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density compared to the devices subjected to only rapid thermal annealing (RTA) at 600 degrees C. Therefore, NH3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.