Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates

Abstract

In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer, treatment exhibit the two distinct remnant polarization (P-r), Secondly the device with a larger P-r shows a higher gate leakage current and smaller time-to-breakdown (t(BD)) compared to the device with a smaller P-r. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large P-r shows a lower extrapolated operating voltage. However more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large P-r still can be obtained. (C) 2020 The Japan Society of Applied Physics