Browsing by Author "Yao, D. J."

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Effect of al trace dimension on electromigration failure time of flip-chip solder joints
(2006-09-01)
Chiu, S. H.
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Chen, Chih
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Yao, D. J.
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材料科學與工程學系
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Department of Materials Science and Engineering
The effect of Al-trace dimension on electromigration of flip-chip solder joints was investigated. The Al trace dimension was found to have a significant influence on the electromigration failure time. When joints with Al traces 100 mu m wide were stressed by 1.0 A at 100 degrees C, failure times were 35 h, 1,700 h, and > 3,000 h for joints with Al traces that were 2,550 mu m, 1,700 mu m, and 850 mu m long, respectively. Solder joints with Al traces 40 mu m wide and 2,550 mu m long failed instantly at 0.6 A. The Joule heating effect was found to be responsible for the huge difference in failure time.
Effect of Si-die dimensions on electromigration failure time of flip-chip solder joints
(2011-05-16)
Chang, Y. W.
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Chiu, S. H.
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Chen, Chih
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Yao, D. J.
;
材料科學與工程學系
Electromigration tests were performed for solder joints with various Si dies thickness and area. For the electro-migration in flip-chip solder joints with a 60, 100.250 and 760 mu m thick Si die, it is found that Si-die thickness has profound influence on electro-migration lifetime. The average failure time was 1608.0 h for joints with a 760-mu m-thick die when they are stressed by 1.0 A at 100 degrees C. However, it decreased significantly to 0.6 h for joints with a 60-mu m-thick die. According to the temperature measured by infrared microscopy, solder joints with a thinner die has a higher Joule heating effect, which results in a shorter electromigration lifetime. In addition, the die area has a considerable influence on the electromigration failure time. The electromigration failure time decreases as the die area decreases. The average failure time is 1608.0,28.0, 10.6,5.0 and 0.3 h for the solder joints with die area of 5350 x 4350 mu m(2), 5350 x 3600 mu m(2), 5350 x 3000 mu m(2), 5350 x 2000 mu m(2) and 5350 x 1000 mu m(2), respectively. The Joule heating effect becomes more serious in smaller dies, which causes a shorter electromigration lifetime. (C) 2011 Elsevier B.V. All rights reserved.
INVESTIGATION OF JOULE HEATING EFFECT IN VARIOUS STAGES OF FAILURE IN FLIP-CHIP SOLDER JOINTS UNDER ACCELERATED ELECTROMIGRATION
(2009)
Hsiao, Hsiang Yao
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Chen, Chih
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Yao, D. J.
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材料科學與工程學系
;
Department of Materials Science and Engineering
The Joule heating effect at various stages of electromigration of flip-chip Sn3.5Ag solder joints was investigated under a current of 0.5 Amp at 100 degrees C. During various stages of electromigration, voids may form and propagate and Joule heating effect may vary at different void sizes. To verify the void nucleation and propagation on Joule heating effect during electromigration process, the solder bump was stressed for different lengths of time and then examined by Kelvin bump probes and infrared microscopy. We found that voids started to form at approximately 1.2 times of the initial bump resistance. Then the voids propagated when the bump resistance increased. In addition, the temperature of the solder joints is also increased with the bump resistance and the increase of current stressing time. In the last stage, the temperature of the solder bump increased rapidly due to the bump resistance increased and local Joule heating effect.
Joule heating effect under accelerated electromigration in flip-chip solder joints
(2006)
Chiu, S. H.
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Liang, S. W.
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Chen, Chili
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Yao, D. J.
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材料科學與工程學系
This study employs three-dimensional simulation to investigate the Joule heating effect under accelerated electromigration tests in flip-chip solder joints. It was found that the Joule heating effect was very seriously during high current stressing, and a hot spot exists in the solder bump. The hot-spot may play important role in the void formation and thermomigration in solder bumps during electromigration.
Successful recovery of human viable spermatozoa with curve-straight channel microfluidic system device
(2011-07-01)
Huang, H.
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Yao, D. J.
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Huang, H. J.
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Li, J. R.
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Fan, S. K.