Browsing by Author "Yen, K. H."

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Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-Film Solar Cell Application
(2010-01-01)
Wang, C. M.
;
Huang, Y. T.
;
Yen, K. H.
;
Hsu, H. J.
;
Hsu, C. H.
In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.
Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature
(2010)
Yen, K. H.
;
Nishizaki, S.
;
Ohdaira, K.
;
Matsumura, H.
;
Huang, Y. T.
In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T(cat)) regime. We studied the influence of high T(cat) on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T(cat), the distance between catalyzer and substrate (D(cs)), and the deposition pressure (P). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim