Browsing by Author "Yi"
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Item type:Item, Schottky structure in GaAs semiconductor device(2004-09-07) ;Lee ;Cheng-Shih ;ChangYiThe present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.Item type:Item, Self-alignment manufacturing method of the microlens and the aperture using in optical devices(2007-08-21) ;Chiu ;Yi ;Hsu ;Wen SyangChangThe present invention discloses a self-alignment manufacturing method of a microlens and an aperture using in an optical device. The method manufactures the aperture and the circular opening in the opaque film on a transparent substrate, and utilizes the self-alignment backside exposure technology to precisely integrate the aperture and the microlens made by macromolecule material without any combination step. The claimed method is simpler than conventional technology and can precisely align and integrate the microlens and the aperture with a continuous batch manufacture. Since the aperture and the circular opening are concentric circles and formed in same step, the microlens and the aperture can be precisely aligned with the backside exposure. The claimed invention can effectively improve the optical resolution and efficiency of the optical access and measurement devices.