Browsing by Author "Yu, Chien-Hsien"

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Effect of passivation layer on InGaZnO thin-film transistors with hybrid silver nanowires as source and drain electrodes
(2015-08-01)
Yu, Chien-Hsien
;
Wu, Hung-Chi
;
Chien, Chao-Hsin
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
InGaZnO (IGZO) thin-film transistors (TFTs) with hybrid silver nanowires (hybrid-AgNWs) as the source and drain electrodes exhibit superior performance according to the on/off current ratio (approximate to 10(6)), subthreshold swing (SS) (367 mV/decade), and mobility (15.6 cm(2) V-1 s(-1)). The transfer and output characteristics of nanowire-based electrodes are comparable with those of titanium electrodes. The devices are fabricated on a plastic substrate and are highly transparent (>70%) and flexible. The device performance is severely degraded during operation in air, especially under high humidity conditions, and progressive deterioration resulting from water molecule diffusion leads to a high current density when the device is swept. Hence, introducing a passivation layer on the hybrid-AgNW electrodes is imperative. (C) 2015 The Japan Society of Applied Physics
Performance of Organic Thin-Film Transistors Controlled by Electrode and Device Structures
(2009-04-01)
Yu, Chien-Hsien
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Lei, Tan-Fu
;
Liao, Jin-Long
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Yan, Jing-Yi
;
Ho, Jia-Chong
We have fabricated organic thin-film transistors (OTFTs) of top contact (TC) structures using silver electrode based on triethylsilylethynyl anthradithiophene (TES-ADT) with mobility above 0.41 cm(2) s(-1) V(-1), current modulation higher than 5 x 10(7) and sub-threshold swing below 0.65 V/dec.. The electrical characteristics of OTFTs are not only corresponding to the work function of source and drain electrodes materials but also to the surface tension and deposition energy of them. The effects of work function and surface tension dominate the electrical characteristics in bottom contact (BC) device. On the other hand, TC device is affected by deposition energy dominantly.