Browsing by Author "Zade, D."

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Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
(2011-01-01)
Kanda, T.
;
Zade, D.
;
Lin, Y. -C.
;
Kakushima, K.
;
Ahmet, P.
The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (D-it) have been extracted. It has been found that the low Dit can be achieved by lowering the annealing temperature for an extended period of time.
Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques
(2011-07-01)
Zade, D.
;
Kakushima, K.
;
Kanda, T.
;
Lin, Y. C.
;
Ahmet, P.
The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO(2) on electrical characteristics of W/HfO(2)/n-In(0.53)Ga(0.47)As capacitors are investigated. It is found that by depositing a thin HfO(2) layer at the interface when substrate temperature is raised to 300 degrees C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO(2) thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO(2)deposition at 300 degrees C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition. (c) 2011 Elsevier B.V. All rights reserved.
Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
(2011-07-01)
Zade, D.
;
Kakushima, K.
;
Kanda, T.
;
Lin, Y. C.
;
Ahmet, P.
The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 degrees C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO(2)deposition at 300 degrees C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition. (c) 2011 Elsevier B.V. All rights reserved.