Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
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DOI
10.1149/1.3567624
Abstract
The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (D-it) have been extracted. It has been found that the low Dit can be achieved by lowering the annealing temperature for an extended period of time.