Browsing by Issue Date, starting with "1975-04-15"

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管管作品三首
(1975-04-15)
管管
管管作品三首
(1975-04-15)
管管
管管作品三首
(1975-04-15)
管管
管管作品三首
(1975-04-15)
管管
管管作品三首
(1975-04-15)
管管
管管作品三首
(1975-04-15)
管管
詩人管管、吳晟獲現代詩創作獎
(1975-06-12)
本報訊
詩人管管吳晟獲得現代詩獎
(1975-06-12)
本報訊
真摯與奔放現代詩獎基金會編印管管.吳晟作品合集
(1975-06-13)
本報訊
詩隊伍信箱
(1975-06-13)
本報訊
The Inexpensive Repetitively Pulsed CO2 Laser
(交大學刊編輯委員會, 1975-07)
黃廣志
;
李大為
;
張一蕃
;
K.C.Huang
;
David Lee
Experiments were performed to obtain inexpensive construction of repetitively pulsed CO2 lasers. A 2.2 cm bore,150 cm discharge tube containing CO2 and N2 gas mixture was operated at 24 KV to produce output in excess of 0.1 joule. The output was approximately doubled when He gas was used along with CO2,N2 gases. At maximum output energy the ratio of electric field to pressure was approximately 20 V/cm torr. Good control of discharge and high circuit efficiency was obtained with a simple circuit operated at 30 or 60 pulses per second synchronized to the 60 Hz power line.
Calculation of Electron Mobility in High Fields by Path Integral Method
(交大學刊編輯委員會, 1975-07)
吳慶源
;
Ching-Yuan Wu
The mobility of elemental semiconductor is calculated for all fields up to breakdown by means of the path integral method. A self-consistent solution of the Boltzmann transport equation is obtained and analytic expressions for thr drift velocity,mobility and the relationship between electron temperature and the electric field is obtained. The validity of this calculation is limited to elemental semiconductors, such as Ge and Si at lattice temperatures high enough so that inter-valley scattering may be neglected, and the scattering is dominated by electron- phonon scattering. A comparison between theory and the experimental results for n-type and p-type Ge is made. It is found that agreement between theory and experiment is good for both n- and p-type Ge. A saturation velocity of 6.10*10^3 cm/sec between 2.1*10^3 v/cm and 5.1*10^3 v/cmis predicted for n-type Ge.
The Annealing and the Hysterisis Effects of Au+ Implanted MOS Structures
(交大學刊編輯委員會, 1975-07)
陳龍英
;
Long-Ing Chen
Firstly, this work provides a convenient method, with C-V, I-V and lifetime measurements as the analytic tools, to study the annealing and hysterisis effects in Au+ implanted SiO2 MOS structures. With 70 keV Au+ implanted into 560Å thick SiO2 layer, the optimum annealing condition is at 400℃, 15 to 30 minutes in dry nitrogen gas. With stress voltages range from +24 to -30 volts applied for 1 second, the flatband voltage shift is 14 volts which corresponds to an accumulated or stored charge of -8*10^12e cm^-2 in the oxide layer. Thus the resulting MOS structure behaves similarly to a floating gate or multilayer device with obvious simplifications in the processing.
數據調變器之低頻率帶通濾波器的設計與製造
(交大學刊編輯委員會, 1975-07)
賴倍偉
;
Bei-Wey Lai
數據調變器已成為時下電子計算機遙用必備的機器，調變器中的濾波器為整機重要的骨幹。本文所述乃低頻率帶通濾波器之設計—利用積分線路及運算放大器之合成，以獲得較佳之頻率響應，解決傳統式的濾波器用於低頻時製作之困難，並成功地使用於自製的數據調變器中。
New Identities on the Riemann Tensor
(交大學刊編輯委員會, 1975-07)
鄭國順
;
Kuo-Shung Cheng
A set of new identities which involve second covariant derivatives and quadratic forms of the Riemann tensor are proved. These new identities can be thought of as integrability conditions derived from the equations that define the Riemann tensor in terms of the affine connections.
Exact Analytic Solutions of Classical Free Gauge Field Equation
(交大學刊編輯委員會, 1975-07)
鄭國順
;
Kuo-Shung Cheng
A class of exact analytic solutions for the classical free gauge field equation was discovered and the implications were discussed.
Stability Equation Method,Part II：Computation Routines for Solving Polynomial Equations with Complex Coefficients
(交大學刊編輯委員會, 1975-07)
蔡義從
;
韓光渭
;
Y.T.Tsay
;
K.W.Han
Methods for computing the roots of polynomial equations with complex coefficients by use of the stability equations are presented in this paper. Based upon the presented methods, computation routines arewritten, which can be used to solve polynomial equations with-complex coefficients by dealing with real numbers only. In comparison with current methods the advantages of the presented methods are given, and applications to the analysis and design of control systems are considered.
Synchronous Machine Modeling For Automatic Control Theorem
(交大學刊編輯委員會, 1975-07)
沈中益
;
Chung-Yi Shen
In this paper, a mathematical form of synchronous machine model is developed for the requirement of modern automatic control theorem. This model is based on the assumption that the generator feeds a general three-phase tee-form transmission system consisting of a step-up transformer, a shunt load and a transmission line terminating at a bus of known voltage.
Synthesis of Transfer Function Using Active RC Circuits
(交大學刊編輯委員會, 1975-07)
鄧清政
;
Ching-Cheng Teng
A simple active RC circuit is given to synthesize the low- pass type of second order transfer function. The damping ratio is easily adjusted without changing the value of undamped natural frequency. An experimental example is given to illustrate the simple design procedure.
Effects of Energy-Band Structures on Longitudinal Magnetoacoustic Phenomena in Bismuth
(交大學刊編輯委員會, 1975-07)
吳啟宗
;
蔡健三
;
吳仲湛
;
C.C.Wu
;
J.Tsai
The effects of energy-band structures on the propagation of ultrasound in bismuth in the presence of a dc magnetic field are investigated by using the quantum-mechanical treatment which is valid in the high- frequency region. It is found that the absorption coefficient and change in sound velocity oscillate with the dc magnetic field for the Cohen nonellipsoidal nonparabolic (NENP) model. However, no oscillations in the absorption coefficient can be observed in strong magnetic fields for both ellipsoidal nonparabolic (ENP) and ellipsoidal parabolic (EP) models. These oscillations can be interpreted as the so-called "giant quantum oscillations"which arise from the resonant absorption of the sound wave by electrons. It is also found that the absorption coefficient and change in sound velocity increase with the sound frequency for NENP, ENP,and EP models. However, there exsits a big discontinuous cusp at the high-frequency region for both ENP and EP models. Therefore we conclude that the NENP model will give a much better description of the energy band structure in bismuth than do the ENP and EP models.