Browsing by Issue Date, starting with "1990-12-01"

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FULL-WAVE ANALYSIS OF LOSSY QUASI-PLANAR TRANSMISSION-LINE INCORPORATING THE METAL MODES
(1990-12-01)
TZUANG, CKC
;
CHEN, CD
;
PENG, ST
;
傳播研究所
;
電信研究中心
We present a novel and accurate full-wave mode-matching approach to analyze the dispersion characteristics of millimeter-wave and microwave transmission lines with finite conductivity, metallization thickness, and holding grooves. The approach is quite general but only the results for a unilateral finline are presented. The accuracy of the solution depends primarily on the correct and complete description of eigenfunction expansions in each of the uniform (stratified) or nonuniform layer regions. The latter consists of metallized strips of finite conductivity, which in turn produce the so-called metal modes (eigenmodes). The metal mode exists in the metallized region with high conductivity for the most part and decays sharply in the air region. Without incorporating the metal modes, the convergence studies will fail and the accuracy of the field theory solution deteriorates. Since the accuracy of the present approach is established, the composite effects of the finite conductivity and metallization thickness can be studied rigorously. A numerical limiting case analysis shows that the mode conversion between the dominant finline mode and the dielectric-slab-loaded waveguide mode may happen through the reduction of the metallization thickness. The theoretical results for the dispersion parameters of the dominant mode propagation constant and the characteristic impedance are reported. The effects of the conductor losses using various metallizing materials are also presented.
MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR
(1990-12-01)
YARN, KF
;
CHANG, CY
;
WANG, YH
;
WANG, RL
;
電控工程研究所
This letter describes a power GaAs bipolar-unipolar transition negative differential transistor (BUNDR) using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V(BE) = 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.
STRUCTURAL AND SUPERCONDUCTING PROPERTIES OF YBA2(CU1-XAGX)3O7 WITH X-LESS-THAN-OR-EQUAL-TO-0.20
(1990-12-01)
LIN, JJ
;
CHEN, TM
;
CHEN, YF
;
應用化學系
;
Department of Applied Chemistry
SUMS OF IDEMPOTENT MATRICES
(1990-12-01)
WU, PY
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
PHYSICAL TIMING MODELS AND DESIGN METHODOLOGY OF BIPOLAR NONTHRESHOLD LOGIC-CIRCUITS
(1990-12-01)
WU, CY
;
WU, TS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Physical timing models have been derived by using the current-domain BJT equivalent circuit for high-speed low-power bipolar NTL circuits. The design methodology of the shunt capacitance C(E) and the emitter length of bipolar NTL circuits has also been developed in this study. It is shown that the optimal value of the shunt capacitance C(E) is equal to 1-1.25 C(E0) where C(E0) is the shunt capacitance of NTL circuit without voltage or current overshooting and undershooting. Both an exact model and a simplified model for C(E0) have been derived. Applying the developed timing models and design methodology, the sizing of NTL gates and taper buffers have been successfully performed as application examples.
A CAD CAM SYSTEM FOR 3D COORDINATE MEASURING DATA
(1990-12-01)
LEE, AC
;
CHEN, DP
;
LIN, CL
;
交大名義發表
;
機械工程學系
A RICH SPECTRUM FROM POTASSIUM VAPOR ON THE 42S1/2-32D5/2 2-PHOTON RESONANCE
(1990-12-01)
TSAI, JH
;
LU, MH
;
交大名義發表
;
光電工程學系
;
National Chiao Tung University
AN SCR WITH SIMPLE MIS STRUCTURE
(1990-12-01)
CHANG, DCY
;
LEE, CL
;
LEI, TF
;
電控工程研究所
;
Institute of Electrical and Control Engineering
A device to work as an SCR with a simple MIS p-n Structure is proposed and demonstrated. It employs two junction diodes, with a thin oxide layer grown prior to metallization. This device can act as a triac when a bi-directional ac voltage is applied, while acts as an SCR when a bias voltage is applied to the N-substrate.
MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION OF DIAMOND - ITS GROWTH AND CHARACTERIZATION
(1990-12-05)
CHEN, CF
;
NISHIMURA, K
;
KO, ES
;
OGAWA, E
;
HOSOMI, S
Diamond was deposited in both film and particle forms by microwave plasma chemical vapour deposition (CVD) from both CH4-H2 and CO-H2 systems with additive gases of O2 and CO2. The products were comparatively characterized by X-ray diffraction, scanning electron microscopy observation, and Raman and cathodoluminescence spectroscopy. Deposition parameters employed were a power input of 220 W, an H2 flow of 100 cm3 min-1, and a pressure of 3.3 kPa. The addition of O2 or CO2 gas resulted in increasing deposition rates of diamond, up to six times as high as the cases where no additives were used. The addition also resulted in improved crystallinity, so some were comparable with the naturally occurring type IIa diamond. The most favourable results obtained with the system CO-CO2-H2 make the combination appear to be the most promising for diamond synthesis by the microwave plasma CVD process. A possible mechanism of deposition from those gases is suggested.
WILSON LOOP AND CONTOUR SHAPES
(1990-12-15)
KAO, WF
;
電子物理學系
;
Department of Electrophysics
By computing the Wilson loop expectation value W[C] in the two-dimensional Schwinger model on R1 x S1, we show that nonleading terms depend on the shape of the contours both on R1 x R1 and R1 x S1. We also find that the rhombic contour and triangular contour lead to the same static potentials both on R1 x R1 and R1 x S1. The binding energy is also affected by the choice of contour shapes on the R1 x S1 model. This indicates that the model on R1 x S1 deserves more study.
LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICON
(1990-12-15)
TSUI, BY
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Thin platinum films of 164 and 303 angstrom thickness are deposited on (100) silicon and annealed at temperatures ranging from 180 to 300-degrees-C in a nitrogen furnace for various times ranging from 1 min to 200 h. Sheet resistance (R(s) measurement shows a four-stage silicide formation sequence: (1) the R(s) increases to a maximum value; (2) the R(s) then decreases to a minimum value; (3) the R(s) increases once again and reaches a second maximum value; and (4) the R(s) decreases to a final stable value. X-ray diffraction analysis indicates that the initial phase grown is Pt12Si5 which corresponds to the sheet-resistance increase in the first stage. This phase is also identified by the transmission electron diffraction analysis. This is the first time that the Pt12Si5 phase formed by the Pt/Si direct reaction is observed. The second stage corresponds to the growth of Pt2Si as confirmed by the x-ray diffraction and Auger spectroscopy analyses. The third stage corresponds to the growth of PtSi and the final stage corresponds to the increase of PtSi grain size. Samples with initial Pt films of 500, 800, and 2000 angstrom thickness were also prepared and analyzed by x-ray diffraction. The increase of film thickness suppresses the growth of Pt12Si5, and for Pt films thicker than 800 angstrom the initial phase grown becomes Pt2Si. The film thickness dependence is explained by the partial lattice-match-induced preferred phase growth effect. The effective absorption coefficient (K(se) of the Pt/Si structure after annealing is determined by ellipsometry measurement, and the activation energy of the Pt12Si5 phase formation derived from the R(s)-time plot or the K(se)-time plot is determined to be 1.5-1.6 eV.
THE MECHANISM OF CHAINS IN PRODUCING ACOUSTIC PLASMONS IN SYSTEMS COMPOSED OF CU-O2 LAYERS AND CU-O CHAINS
(1990-12-24)
TSAY, SF
;
WANG, SY
;
YANG, TJW
;
電子物理學系
;
Department of Electrophysics
Based on the Coulombic electron-electron interactions the dielectric functions, dispersion relations and various plasmons are calculated and analyzed for systems containing a finite number of Cu-O layers and chains. Because of the chain's small polarization the chains could serve as a charge reservoir in stabilizing the acoustic plasmons of the layers and for larger q they could provide isolation between neighboring coupled layers yielding more acoustic plasmons.
美國紐約〔東西門〕景觀雕塑設置案（1973）
(1991)
不詳
楊英風（右）與二女兒楊美惠（左）及友人（中）攝於紐約〔東西門〕前。
A LETTER-ORIENTED PERFECT HASHING SCHEME BASED UPON SPARSE TABLE COMPRESSION
(1991-01-01)
CHANG, CC
;
WU, TC
;
資訊科學與工程研究所
;
Institute of Computer Science and Engineering
In this paper, a new letter-oriented perfect hashing scheme based on Ziegler's row displacement method is presented. A unique n-tuple from a given set of static letter-oriented key words can be extracted by a heuristic algorithm. Then the extracted distinct n-tuples are associated with a 0/1 sparse matrix. Using a sparse matrix compression technique, a perfect hashing function on the key words is then constructed.
戲曲春秋──談周義雄「南管樂舞」系列
(1991)
楊英風
A LINEAR-TIME ALGORITHM TO RECOGNIZE THE DOUBLE EULER TRAIL FOR SERIES-PARALLEL NETWORKS
(1991)
HSU, LH
;
HWANG, JY
;
HO, TY
;
TSAI, CH
;
資訊工程學系
2-FREQUENCY DISPLACEMENT MEASUREMENT INTERFEROMETER BASED ON A DOUBLE-HETERODYNE TECHNIQUE
(1991-01-01)
CHIEN, PY
;
交大名義發表
;
光電工程學系
;
National Chiao Tung University
;
Department of Photonics
A two-frequency laser heterodyne interferometer has been implemented for small displacement measurement. The displacement signal is detected by using a double-heterodyne technique. Vibration amplitudes at 1 kHz on the order of 1 nm and smaller can be detected.
新展舊憶
(1991)
楊英風
ANALYTIC MODELS FOR PERFORMANCE EVALUATION OF SINGLE-BUFFERED BANYAN NETWORKS UNDER NONUNIFORM TRAFFIC
(1991-01-01)
LEE, TH
;
交大名義發表
;
電信工程研究所
;
National Chiao Tung University
;
Institute of Communications Engineering
The performance of single-buffered banyan networks under certain nonuniform traffic patterns had been studied by Garg and Huang. However, the models used are over simplified and the results obtained may deviate from exact values significantly. Alternative models to achieve more accurate performance estimates are presented. In our models, the destinations of blocked packets residing in the buffers of nodes at stage 1 (and perhaps stage 2, depending on the traffic matrix) are memorised. Compared with those adopted by Garg and Huang, our models are only slightly more complicated. By viewing banyan networks as queueing systems, we apply Little's formula to compute the average packet delays.
於理性中尋覓傳統中國的哲思──談孫宇立的雕塑創作
(1991)
楊英風