Browsing by Issue Date, starting with "1995-08-10"

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ASYMPTOTIC-BEHAVIOR OF POSITIVE SOLUTIONS TO SEMILINEAR ELLIPTIC-EQUATIONS ON EXPANDING ANNULI
(1995-08-10)
LIN, SS
;
交大名義發表
;
應用數學系
;
National Chiao Tung University
;
Department of Applied Mathematics
We study the asymptotic behavior of positive solutions of the semilinear elliptic equation Delta u + f(u) = 0 in Omega(a), u = 0 on partial derivative Omega(a), where Omega(a),= {x is an element of R(N): a < x < a + 1} are expanding annuli as a --> infinity, and Sis positive and superlinear at both 0 and infinity. We first show that there are a priori bounds for some positive solutions u(a)(x) as a --> infinity. Then, if we fu: any direction, after a suitable translation of u(a) the limiting solutions are non-negative solutions on the infinite strip. We can obtain more detailed descriptions of these limits if u(a) is radially symmetric, least-energy, or least-energy with a particular symmetry. (C) 1995 Academic Press, Inc.
SPATIOTEMPORAL SOLITARY PULSES IN GRADED-INDEX MATERIALS WITH KERR NONLINEARITY
(1995-08-15)
YU, SS
;
CHIEN, CH
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LAI, YC
;
WANG, YP
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光電工程學系
We analyze spatio-temporal pulse propagation in graded-index Kerr materials with the variational method, and find that if the path of propagation provides negative group-velocity dispersion, stable solitary pulses exist for pulse energy smaller than a critical value, Spatial and temporal degrees of freedom cannot be analyzed separately due to their coupling through the Kerr nonlinarity. Our unified analysis not only elucidates the hidden coupling, but also clarifies relations between parameters of the solitary pulse. The analysis is verified by direct numerical simulation of the paraxial wave equation.
天使為什麼長了翅膀
(1995-08-15)
管管
天使為什麼長了翅膀
(1995-08-15)
管管
天使為什麼長了翅膀
(1995-08-15)
管管
天使為什麼長了翅膀
(1995-08-15)
管管
EXCHANGE INTERACTION IN DILUTED MAGNETIC SEMICONDUCTORS - CRYSTAL-STRUCTURE-INDUCED ANISOTROPY
(1995-08-15)
YU, SS
;
LEE, VC
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光電工程研究所
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Institute of EO Enginerring
In this paper, we employ the model developed by Larson et al. to calculate the exchange interaction between magnetic ions in diluted magnetic semiconductors in a method that incorporates explicitly the intrinsic symmetry of the host crystals. We find that the symmetry of the wave function, and thus the interaction matrix element, could induce strong directional dependence of the exchange interaction despite the fact that superexchange is mediated via virtual excitations near the center of the Brillouin zone, where the band energy is essentially isotropic.
FAST LEG CODEBOOK GENERATOR FOR ETC IMAGE COMPRESSION
(1995-08-17)
WU, KS
;
LIN, JC
;
交大名義發表
;
資訊工程學系
;
National Chiao Tung University
When the high-mean and low-mean generated by the BTC image compression technique are to be quantised using VQ, the computation time required to search for the nearest centroid can be reduced significantly using the proposed method. Experiments comparing the full-search and EHPM algorithms demonstrate this.
SYNTHESIS OF FERROELECTRIC SIDE-CHAIN LIQUID-CRYSTALLINE POLYOXETANES BY RING-OPENING POLYMERIZATION
(1995-08-20)
HSU, CS
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SHIEH, SP
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應用化學系
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Department of Applied Chemistry
VAPOR-DEPOSITION POLYMERIZATION OF 2,5-DIMETHYLENE-2,5-DIHYDROFURAN
(1995-08-20)
LU, YH
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HSU, CS
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應用化學系
;
Department of Applied Chemistry
NEW APPROACHES TO (-)-FURODYSIN AND (-)-FURODYSINN
(1995-08-20)
HO, TL
;
LEE, KY
;
應用化學系
;
Department of Applied Chemistry
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
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SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
(1995-08-21)
TSAI, WC
;
CHANG, CY
;
JUNG, TG
;
LIOU, TS
;
HUANG, GW
A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 degrees C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 degrees C or below. (C) 1995 American Institute of Physics.
SYNTHESIZING FEATHER TEXTURES IN GALLIFORMES
(1995-08-28)
DAI, WK
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SHIH, ZC
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CHANG, RC
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交大名義發表
;
資訊工程學系
The texture of feather is one of the most fascinating, complicated, and beautiful texture patterns in nature. In this paper, we propose a new and effective texture generation approach that uses the traits of iteration behavior to synthesize the textures of Galliformes feathers realistically. We also propose an interactive feather modeling approach which provides a close connection between the user's intuition and the resulting branching pattern. In texturing the feather structure, we use an object-space mapping technique. Experimental results are presented to show the effectiveness of our method.
魯迅的「藥」
(1995-08-30)
管管
魯迅的「藥」
(1995-08-30)
管管
魯迅的「藥」
(1995-08-30)
管管
魯迅的「藥」
(1995-08-30)
管管
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
(1995-09-01)
LIU, CW
;
DAI, BT
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YEH, CF
;
電子工程學系及電子研究所
;
奈米中心
To better understand variations in the rate at which material is removed from a wafer during chemical-mechanical polishing (CMP), knowledge of the mechanical properties of the wafer surface is required. The nanoscale mechanical. properties of undoped dielectric films were investigated using the nanoindentation technique. Crack resistance examined from the loading curve suggested that precursor cracks for SiH4-atmospheric pressure chemical deposition films with a tensile stress, as compared with other dielectric films with compressive stresses, appeared in the earlier stage of indentation. The hardness of dielectric films determined from the unloading curve could be considerably dependent on the film's preparation methods. Correlation between the Si-O bond densities and hardness were also studied. Experimental results showed that there was a Linear relationship between the surface hardness and the removal rates of the undoped dielectric films under a well-controlled CMP process.