Browsing by Issue Date, starting with "1995-08-20"

Now showing 1 - 20 of 86783

SYNTHESIS OF FERROELECTRIC SIDE-CHAIN LIQUID-CRYSTALLINE POLYOXETANES BY RING-OPENING POLYMERIZATION
(1995-08-20)
HSU, CS
;
SHIEH, SP
;
應用化學系
;
Department of Applied Chemistry
VAPOR-DEPOSITION POLYMERIZATION OF 2,5-DIMETHYLENE-2,5-DIHYDROFURAN
(1995-08-20)
LU, YH
;
HSU, CS
;
應用化學系
;
Department of Applied Chemistry
NEW APPROACHES TO (-)-FURODYSIN AND (-)-FURODYSINN
(1995-08-20)
HO, TL
;
LEE, KY
;
應用化學系
;
Department of Applied Chemistry
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
(1995-08-21)
TSAI, WC
;
CHANG, CY
;
JUNG, TG
;
LIOU, TS
;
HUANG, GW
A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 degrees C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 degrees C or below. (C) 1995 American Institute of Physics.
SYNTHESIZING FEATHER TEXTURES IN GALLIFORMES
(1995-08-28)
DAI, WK
;
SHIH, ZC
;
CHANG, RC
;
交大名義發表
;
資訊工程學系
The texture of feather is one of the most fascinating, complicated, and beautiful texture patterns in nature. In this paper, we propose a new and effective texture generation approach that uses the traits of iteration behavior to synthesize the textures of Galliformes feathers realistically. We also propose an interactive feather modeling approach which provides a close connection between the user's intuition and the resulting branching pattern. In texturing the feather structure, we use an object-space mapping technique. Experimental results are presented to show the effectiveness of our method.
魯迅的「藥」
(1995-08-30)
管管
魯迅的「藥」
(1995-08-30)
管管
魯迅的「藥」
(1995-08-30)
管管
魯迅的「藥」
(1995-08-30)
管管
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
(1995-09-01)
LIU, CW
;
DAI, BT
;
YEH, CF
;
電子工程學系及電子研究所
;
奈米中心
To better understand variations in the rate at which material is removed from a wafer during chemical-mechanical polishing (CMP), knowledge of the mechanical properties of the wafer surface is required. The nanoscale mechanical. properties of undoped dielectric films were investigated using the nanoindentation technique. Crack resistance examined from the loading curve suggested that precursor cracks for SiH4-atmospheric pressure chemical deposition films with a tensile stress, as compared with other dielectric films with compressive stresses, appeared in the earlier stage of indentation. The hardness of dielectric films determined from the unloading curve could be considerably dependent on the film's preparation methods. Correlation between the Si-O bond densities and hardness were also studied. Experimental results showed that there was a Linear relationship between the surface hardness and the removal rates of the undoped dielectric films under a well-controlled CMP process.
RECOGNITION OF RICKER WAVELETS BY SYNTACTIC ANALYSIS
(1995-09-01)
HUANG, KY
;
LEU, DR
;
資訊工程學系
;
Department of Computer Science
Syntactic pattern recognition techniques are applied to the analysis of 1-D seismic traces to classify picker wavelets. Seismic picker wavelets have structural information, and each wavelet can be represented by a string of symbols. To recognize the strings, we use a finite-state automaton to identify each string. The automaton can accept strings having substitution, insertion, and deletion errors of the symbols. There are two attributes, terminal symbol and weight, in each transition of the automaton. A minimum-cost, error-correcting, finite-state automaton is proposed to parse the input string.
INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION
(1995-09-01)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
電子工程學系及電子研究所
A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNz) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNz film with very low compressive stress (<1x10(9) dyn/cm(2)) and excellent UV-transmittance (>70% for 1.6 mu m-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and SiH4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM's) devices, and very good UV-erasability and reliability performances are demonstrated.
IDENTIFYING UNTESTABLE FAULTS IN SEQUENTIAL-CIRCUITS
(1995-09-01)
LIANG, HC
;
LEE, CL
;
CHEN, JE
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This article proposes an efficient method to identify untestable faults in sequential circuits. It uses a controllability calculation and symbolic simulation procedure that propagates the characteristics of unknown initial flip-flop states throughout the circuit. Identifying flip-flops that cannot be initialized and circuit lines that cannot be justified to definite values, this process classifies and identifies four types of untestable faults. Experimental results show that it improves the efficiency of a test generation system.
L(P) NORM BACK-PROPAGATION ALGORITHM FOR ADAPTIVE EQUALIZATION
(1995-09-01)
SIU, S
;
CHANG, CH
;
WEI, CH
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The l(p) norm back propagation algorithm for perceptron based adaptive equalization is analyzed taking account of possible numerical problem encountered when p < 1. Two methods are proposed to overcome the numerical problem. Computer simulations indicate that simultaneous improvement in convergence rate and bit-error-rate (BER) performance can be achieved by using p < 2.
FRACTURE-TOUGHNESS OF ACRYLONITRILE-BUTADIENE-STYRENE BY J-INTEGRAL METHODS
(1995-09-01)
LU, ML
;
LEE, CB
;
CHANG, FC
;
應用化學系
;
Department of Applied Chemistry
The fracture toughness of acrylonitrile-butadiene-styrene (ABS) was determined by three J-integral methods, ASTM E813-81, E813-87, and by hysteresis. The critical J values (J(1c)) obtained are fairly independent of the specimen thickness, ranging from 10 to 15 mm. ASTM E813-81 and hysteresis methods result in comparable J(1c) values, whereas the ASTM E813-87 was similar to 40% to 50% higher. The critical displacement determined from the plots of hysteresis (energy or ratio) and the true crack grow length vs. displacement are close. This indicates the critical displacement determined by the hysteresis method is indeed the displacement at onset of crack initiation, and the corresponding J(1c) represents a physical event of crack initiation. The elastic storage energy, the input energy minus the hysteresis energy, is the most important factor in determining the onset of crack initiation. The critical elastic storage energy (at the beginning of crack growth) was found close to the J(1c) obtained from the E813-81 or the hysteresis method.
L(P) NORM BACK-PROPAGATION ALGORITHM FOR ADAPTIVE EQUALIZATION
(1995-09-01)
SIU, S
;
CHANG, CH
;
WEI, CH
;
電控工程研究所
;
Institute of Electrical and Control Engineering
The l(p) norm back propagation algorithm for perceptron based adaptive equalization is analyzed taking account of possible numerical problem encountered when p < 1. Two methods are proposed to overcome the numerical problem. Computer simulations indicate that simultaneous improvement in convergence rate and bit-error-rate (BER) performance can be achieved by using p < 2.
MULTIBAND WAVELENGTH-DIVISION DEMULTIPLEXING WITH A CASCADED SUBSTRATE-MODE GRATING STRUCTURE
(1995-09-01)
TSAI, YK
;
HUANG, YT
;
SU, DC
;
電子工程學系及電子研究所
;
光電工程研究所
A multiband wavelength-division-demultiplexing (WDDM) structure, which incorporates cascaded substrate-mode holograms, is presented. The method can be used to design a WDDM device that consists of two or more layers of fundamental units (i.e., substrate-mode holograms). The fundamental unit is based on a diffracted grating and a substrate that include angular dispersion, wavelength bandwidth, and total internal reflection, which can be used to separate optical signals of different wavelengths. We have designed and built a multiband WDDM device, incorporating cascaded substrate-mode holograms in dichromated gelatin.
PRESSURE EFFECT ON YBA2CU3O7 THIN-FILM GROWTH IN OFF-AXIS RADIO-FREQUENCY MAGNETRON SPUTTERING
(1995-09-01)
WU, SC
;
TSAI, WC
;
HUANG, CK
;
HSU, HT
;
HUANG, CJ
YBa2CU3O7-x (123) thin films were fabricated on (100) MgO substrates by off-axis single target radio frequency (rf) magnetron sputtering. Our study focused on the effect of chamber pressure on the composition, microstructure, and superconductive properties on transition behavior and T-c, of the grown him studied. An empirical formula was derived to explain the dependence of the deposition rate of various components on the pressure. Next, we compared the transport mechanism of the sputtered particles between the off-axis rf and the on-axis direct current sputtering and determined the processing conditions that result in superconducting films of better quality. According to our findings, growth at higher pressures (>100 mTorr) produces more homogeneous and higher T-c superconducting films. (C) 1995 American Vacuum Society.