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站在詩意的籃下

(1995-09-11)

雪娥

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管管:亦詩亦文的行者

(1995-09-15)

管管

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REDUCTION OF SOLITON-INTERACTIONS BY ZIGZAG-SLIDING-FREQUENCY GUIDING FILTERS

(1995-09-15)

DUNG, JC

;

CHI, S

;

WEN, SF

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光電工程學系

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Department of Photonics

Reductions of the soliton interactions and jitter by the upsliding-frequency filter, the downsliding-frequency filter, and the zigzag-sliding-frequency filter are numerically studied. It is shown that the most effective filter for reducing the soliton interactions is the zigzag-sliding-frequency filter. (C) 1995 Optical Society of America

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REDUCTION OF SOLITON-INTERACTIONS BY ZIGZAG-SLIDING-FREQUENCY GUIDING FILTERS

(1995-09-15)

DUNG, JC

;

CHI, S

;

WEN, SF

;

光電工程研究所

;

Institute of EO Enginerring

Reductions of the soliton interactions and jitter by the upsliding-frequency filter, the downsliding-frequency filter, and the zigzag-sliding-frequency filter are numerically studied. It is shown that the most effective filter for reducing the soliton interactions is the zigzag-sliding-frequency filter. (C) 1995 Optical Society of America

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管管:亦詩亦文的行者

(1995-09-15)

管管

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(1995-09-15)

CHEN, SM

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交大名義發表

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資訊工程學系

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National Chiao Tung University

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Department of Computer Science

In this paper, we propose two similarity measures for measuring the degree of similarity between vague sets. The proposed measures can provide a useful way for measuring the degree of similarity between vague sets.

Item

(1995-09-15)

CHEN, SM

;

資訊工程學系

;

Department of Computer Science

In this paper, we propose two similarity measures for measuring the degree of similarity between vague sets. The proposed measures can provide a useful way for measuring the degree of similarity between vague sets.

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管管:亦詩亦文的行者

(1995-09-15)

管管

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ANISOTROPIC STRONG VOLUME HOLOGRAM IN BATIO3

(1995-09-15)

SUN, CC

;

CHANG, MW

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HSU, KY

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光電工程學系

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Department of Photonics

A photorefractive strong volume hologram by using anisotropic diffraction in a normal-cut BaTiO3 is proposed and demonstrated. Experimental measurements fit the theoretical calculations well by using Kogelnik's formula with unclamped E-O coefficients. The maximum refractive index perturbation in the experiment is larger than 2.7 X 10(-4). In addition, we have observed that the output of the diffracted light are concentric circles. This pattern is shown as a good guide of the estimation of how large the refractive index perturbation is. The Bragg condition of the anisotropic strong volume hologram is so strict that an image-carried hologram cannot be directly read out. We proposed an address image method by erasure for solving this problem. Through this method, this anisotropic strong volume hologram has some potential for optical image storage.

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管管:亦詩亦文的行者

(1995-09-15)

管管

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管管:亦詩亦文的行者

(1995-09-15)

管管

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管管:亦詩亦文的行者

(1995-09-15)

管管

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EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

(1995-09-18)

LEE, WI

;

HUANG, TC

;

GUO, JD

;

FENG, MS

;

材料科學與工程學系

Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.

Item

EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

(1995-09-18)

LEE, WI

;

HUANG, TC

;

GUO, JD

;

FENG, MS

;

材料科學與工程學系

Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.