Browsing by Issue Date, starting with "1997-09-01"

Now showing 1 - 20 of 83496

Analysis and synthesis of geometric models using tree structured relations
(1997-09-01)
Tsai, PL
;
Fu, CC
;
Chieng, WH
;
機械工程學系
;
Department of Mechanical Engineering
In this study, we propose a methodology capable of analysing and synthesizing relational geometric design models, based on a mapping between geometric nodes (points) on the model and the physical dimensions of the solid model. The relations that include translation and rotation between the geometric nodes are stored in a toe structure. Based on this methodology, an implementation is developed that allows a designer to freely synthesize and analyse geometric relations among admissible physical dimensions of the object. Meanwhile the management of the underlying parameterized relational geometric data automatically occurs. (C) 1997 Elsevier Science Ltd.
The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devices
(1997-09-01)
Liu, HW
;
Su, HP
;
Lai, WK
;
Cheng, HC
;
電子工程學系及電子研究所
To be utilized in the high density dynamic random access memory devices, low-pressure dry oxidation of the very thin nitrides has been performed to successfully obtain the ultrathin capacitors' dielectrics with the effective oxide thickness (t(ox,eff)) of 30 - 60 Angstrom. For the electrical properties, the low-pressure dry oxidized (LPDO) nitrides express thinner effective oxide thickness, lower leakage current, and higher reliability than do the atmospheric pressure dry oxidized (APDO) nitrides. After analyzing the diluted HF etching profiles, Auger electron spectrum and Fourier transform infrared spectrum data, an oxide/nitride/oxide (O/N/O) structure is realized for the LPDO samples with respect to the nitride/oxide structure for the APDO ones. This ultrathin O/N/O structure is believed to be the main cause of improving the electrical characteristics. Finally, a low-pressure enhanced oxidation model is also proposed to explain the unusual oxidation phenomenon on the top of the nitride films. The mechanisms of APDO and atmospheric pressure wet oxidation of nitride films are also compared.
Thin oxides with in situ native oxide removal
(1997-09-01)
Chin, A
;
Chen, WJ
;
Chang, T
;
Kao, RH
;
Lin, BC
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
Polynomial approximation coding for progressive image transmission
(1997-09-01)
Lu, CY
;
Chen, AY
;
Wen, KA
;
交大名義發表
;
National Chiao Tung University
This paper presents a progressive image transmission scheme in which polynomial approximation coding is effectively applied to encoding residual images at each stage. This polynomial approximation coding is derived from a regressive model based on the relation between a set of data and their positions. Because the close relation is embedded in a certain polynomial function, the highly efficient compression can be implemented and the decimation and interpolation are also easily realized at the receiving side. Simulations and experimental results are discussed in the later part of this paper. (C) 1997 Academic Press.
Polynomial approximation coding for progressive image transmission
(1997-09-01)
Lu, CY
;
Chen, AY
;
Wen, KA
;
交大名義發表
;
National Chiao Tung University
This paper presents a progressive image transmission scheme in which polynomial approximation coding is effectively applied to encoding residual images at each stage. This polynomial approximation coding is derived from a regressive model based on the relation between a set of data and their positions. Because the close relation is embedded in a certain polynomial function, the highly efficient compression can be implemented and the decimation and interpolation are also easily realized at the receiving side. Simulations and experimental results are discussed in the later part of this paper. (C) 1997 Academic Press.
An efficient conflict-resolution approach to support read/write operations in a video server
(1997-09-01)
Lee, CI
;
Chang, YI
;
Yang, WP
;
資訊工程學系
;
Department of Computer Science
In this paper, we propose an efficient conflict-resolution approach based on the multi-disk architecture for the insertion/deletion operations on continuous media that are split up into blocks and placed in various locations on the disk, without reorganizing the whole data. When a new subobject is inserted after subobject i, it will be assigned with an identification number (i+1) and be inserted into a disk in which the retrieval of the new subobject does not conflict with the retrieval of any other subobject, where a conflict means a pair of two consecutive subobjects that are stored in the same disk have to be retrieved simultaneously However, a new conflict on the same disk may occur since all the identification numbers of subobjects after subobject i are increased by one. Only when such a new conflict occurs, one movement operation is required, so does the case of a deletion operation. Moreover, to reduce those additional movement cost, a deferring approach is proposed at the cost of an additional buffer. In this approach, n data insertions are deferred and stored in a buffer. Then, the system starts to insert those data after an optimal insertion sequence is determined. Based on this approach, two strategies are proposed: the conflict-resolved-first-deferring strategy (the CRFD strategy) and the conflict-resolved-last-deferring strategy (the CRLD strategy). From our performance analysis, we will prove that the CRLD strategy with an insertion sequence according to the ascending order of identification numbers is an optimal strategy based on the proposed deferring approach.
Design of a rule-based continuous process controller using modified IDEF0 methodology
(1997-09-01)
Chen, SG
;
Wu, MZ
;
Li, RK
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
This article proposes a new method to design a rule-based Continuous Process (CP) controller. This approach adopts Modified IDEF0 (MI) diagrams as a graphical representation of production rules. Initially, the material flows or functional requirements for the CP are specified by synthesizing the MI diagram primitives. The control flows for the CP are then created by a number of transformation rules. The MI diagrams are therefore transformed to the Final MI (FMI) diagrams which can be directly transformed to production rules. The fact that production rules are created by systematical transformation eliminates any redundant, contradictory, or unnecessary rules. The simulation approach can verify the consistency of the designed CP controller. Thus, a feasible rule-based CP controller can be systematically developed. An illustrative gas transmission system is examined with three manufacturing policies, i.e. Proportional plus Integral plus Derivative (PID) control, Neural control and Fuzzy control. The results indicate that all of these policies are feasible in applying the proposed method. This method not only provides graphical representations to construct well-organized production rules, but also includes a systematical transformation of the control flows for a CP controller.
Full-wave segmentation analysis of arbitrarily shaped planar circuit
(1997-09-01)
Liu, SP
;
Tzuang, CKC
;
電信工程研究所
;
Institute of Communications Engineering
This paper presents a novel full-wave segmentation method for analyzing a complex and large microwave planar circuit which is divided into several smaller segments with corresponding multiport network parameters, They are obtained by a full-wave space-domain integral-equation technique in connection to a proposed excitation model based on the equivalence principle, The integral equation is solved numerically by Galerkin's procedure resulting in the generalized scattering-matrix (GSM) descriptions of all the subcircuit segments. The combination of these GSM's yields an overall network characterization of the composite circuit, Rigorous convergence studies and extensive validity checks confirm the reliability and accuracy of the proposed method, The novel technique immediately demonstrates its obvious application for quantitative characterization of higher order modes associated with a microwave-circuit discontinuity problem, Finally, very good agreement is obtained in a comparative study of an arbitrary planar structure analyzed by our full-wave method with and without segmentation, respectively.
Monitoring trapped charge generation for gate oxide under stress
(1997-09-01)
Lin, YH
;
Lee, CL
;
Lei, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A measurement method to extract the respective quantities and centroids of positive and negative trapped charges, i.e., Q(p) and Q(n), generated by the negative current stress for gate oxides is proposed and demonstrated, The method is based on neutralization of Q(p) by a low positive current stress to differentiate the effects of Q(p) and Q(n). From the extracted quantities and centroids of Q(p) and Q(n) of negatively stressed oxides, it was found that Q(p) and Q(n) are generated near the oxide/substrate interface and Q(p) is initially much larger than Q(n). After the continuous stressing, Q(p) saturates and moves closer to the interface, but Q(n) keeps increasing and moves away from the interface, especially for those oxides after the post-poly anneal (PPA) treatment, Q(n) is very unstable and easily neutralized, either by a small stress of opposite polarity or the same polarity, For the latter, Q(n) is mainly dependent on the level of the final stressing field.
Monitoring trapped charge generation for gate oxide under stress
(1997-09-01)
Lin, YH
;
Lee, CL
;
Lei, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A measurement method to extract the respective quantities and centroids of positive and negative trapped charges, i.e., Q(p) and Q(n), generated by the negative current stress for gate oxides is proposed and demonstrated, The method is based on neutralization of Q(p) by a low positive current stress to differentiate the effects of Q(p) and Q(n). From the extracted quantities and centroids of Q(p) and Q(n) of negatively stressed oxides, it was found that Q(p) and Q(n) are generated near the oxide/substrate interface and Q(p) is initially much larger than Q(n). After the continuous stressing, Q(p) saturates and moves closer to the interface, but Q(n) keeps increasing and moves away from the interface, especially for those oxides after the post-poly anneal (PPA) treatment, Q(n) is very unstable and easily neutralized, either by a small stress of opposite polarity or the same polarity, For the latter, Q(n) is mainly dependent on the level of the final stressing field.
Thin oxides with in situ native oxide removal
(1997-09-01)
Chin, A
;
Chen, WJ
;
Chang, T
;
Kao, RH
;
Lin, BC
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 Angstrom. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 Angstrom. The roughness increased to one to two monolayers of Si in a 55-Angstrom oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-Angstrom oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.
An efficient conflict-resolution approach to support read/write operations in a video server
(1997-09-01)
Lee, CI
;
Chang, YI
;
Yang, WP
;
資訊工程學系
;
Department of Computer Science
In this paper, we propose an efficient conflict-resolution approach based on the multi-disk architecture for the insertion/deletion operations on continuous media that are split up into blocks and placed in various locations on the disk, without reorganizing the whole data. When a new subobject is inserted after subobject i, it will be assigned with an identification number (i+1) and be inserted into a disk in which the retrieval of the new subobject does not conflict with the retrieval of any other subobject, where a conflict means a pair of two consecutive subobjects that are stored in the same disk have to be retrieved simultaneously However, a new conflict on the same disk may occur since all the identification numbers of subobjects after subobject i are increased by one. Only when such a new conflict occurs, one movement operation is required, so does the case of a deletion operation. Moreover, to reduce those additional movement cost, a deferring approach is proposed at the cost of an additional buffer. In this approach, n data insertions are deferred and stored in a buffer. Then, the system starts to insert those data after an optimal insertion sequence is determined. Based on this approach, two strategies are proposed: the conflict-resolved-first-deferring strategy (the CRFD strategy) and the conflict-resolved-last-deferring strategy (the CRLD strategy). From our performance analysis, we will prove that the CRLD strategy with an insertion sequence according to the ascending order of identification numbers is an optimal strategy based on the proposed deferring approach.
Analysis and synthesis of geometric models using tree structured relations
(1997-09-01)
Tsai, PL
;
Fu, CC
;
Chieng, WH
;
機械工程學系
;
Department of Mechanical Engineering
In this study, we propose a methodology capable of analysing and synthesizing relational geometric design models, based on a mapping between geometric nodes (points) on the model and the physical dimensions of the solid model. The relations that include translation and rotation between the geometric nodes are stored in a toe structure. Based on this methodology, an implementation is developed that allows a designer to freely synthesize and analyse geometric relations among admissible physical dimensions of the object. Meanwhile the management of the underlying parameterized relational geometric data automatically occurs. (C) 1997 Elsevier Science Ltd.
An asymmetric feeding X-band active frequency-scanning leaky-wave antenna
(1997-09-01)
Hu, CC
;
Wu, JJ
;
Jou, CF
;
交大名義發表
;
傳播研究所
An asymmetric feeding X-band active leaky-wave antennas is developed, to excite the first high order mode of the microstrip leaky wave antenna. One is the asymmetric feeding leaky-wave antenna which integrated with a HEMT oscillator, and the other is the frequency-tuned leaky-wave antenna which integrated with a varactor-tuned HEMT VCO. The microstrip leaky-wave antenna is operated in the first higher mode. To excite the first higher mode, the microstrip leaky-wave antenna is fed asymmetrically. The dominant mode excitation has been successfully suppressed by adding a sequence of covered wire in the center of the microstrip leaky wave antenna. The design of these active leaky-wave antennas is discussed and the beam scanning phenomena of the antenna is presented. The HEMT oscillator frequency is controlled by tuning the varactor DC bias and the beam scanning is demonstrated. The measured scanning angle agree with prediction, it is close to 30 degrees as the VCO frequency tuned from 8.06 GHz to 9GHz.
Full-wave segmentation analysis of arbitrarily shaped planar circuit
(1997-09-01)
Liu, SP
;
Tzuang, CKC
;
交大名義發表
;
電信工程研究所
;
National Chiao Tung University
This paper presents a novel full-wave segmentation method for analyzing a complex and large microwave planar circuit which is divided into several smaller segments with corresponding multiport network parameters, They are obtained by a full-wave space-domain integral-equation technique in connection to a proposed excitation model based on the equivalence principle, The integral equation is solved numerically by Galerkin's procedure resulting in the generalized scattering-matrix (GSM) descriptions of all the subcircuit segments. The combination of these GSM's yields an overall network characterization of the composite circuit, Rigorous convergence studies and extensive validity checks confirm the reliability and accuracy of the proposed method, The novel technique immediately demonstrates its obvious application for quantitative characterization of higher order modes associated with a microwave-circuit discontinuity problem, Finally, very good agreement is obtained in a comparative study of an arbitrary planar structure analyzed by our full-wave method with and without segmentation, respectively.
High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications
(1997-09-01)
Lai, YL
;
Chang, EY
;
Chang, CY
;
Tai, MC
;
Liu, TH
We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PBS standard signals, the 2.2-V-operation device with a gate width (W-g) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (P-adj) of -58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications, The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.
The market size of a city-pair route at an airport
(1997-09-01)
Hsu, CI
;
Wu, YH
;
交大名義發表
;
運輸與物流管理系註：原交通所+運管所
;
National Chiao Tung University
A model is developed for estimating the size of the market for a city-pair route at an airport from both the demand and supply sides of air transportation. The average airport access cost, average passenger delay cost, and average airline operating cost all either increase or decrease with an increase in the market size of a city-pair route at an airport, so the optimum market size can be determined from trade-offs among these costs. A nonlinear mathematical programming problem is formulated to determine the optimal number of passengers, the local service area of a city-pair market and to perform sensitivity analyses. The results show that long-haul services ought to be concentrated in one large airport, while short-haul services might be dispersed among many small airports. Improvements in the technology of the airport access mode or increases in the average income of the cities served can expand the market size and service area, but at a declining expansion rate. In metropolitan areas with high population density, airlines can operate more efficiently and distribute air services among more airports. City-pair markets with stable passenger demand, or markets served by airlines with efficient scheduling technology are shown to exhibit high cost efficiencies.
The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devices
(1997-09-01)
Liu, HW
;
Su, HP
;
Lai, WK
;
Cheng, HC
;
電子工程學系及電子研究所
To be utilized in the high density dynamic random access memory devices, low-pressure dry oxidation of the very thin nitrides has been performed to successfully obtain the ultrathin capacitors' dielectrics with the effective oxide thickness (t(ox,eff)) of 30 - 60 Angstrom. For the electrical properties, the low-pressure dry oxidized (LPDO) nitrides express thinner effective oxide thickness, lower leakage current, and higher reliability than do the atmospheric pressure dry oxidized (APDO) nitrides. After analyzing the diluted HF etching profiles, Auger electron spectrum and Fourier transform infrared spectrum data, an oxide/nitride/oxide (O/N/O) structure is realized for the LPDO samples with respect to the nitride/oxide structure for the APDO ones. This ultrathin O/N/O structure is believed to be the main cause of improving the electrical characteristics. Finally, a low-pressure enhanced oxidation model is also proposed to explain the unusual oxidation phenomenon on the top of the nitride films. The mechanisms of APDO and atmospheric pressure wet oxidation of nitride films are also compared.
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
(1997-09-01)
Wang, YL
;
Tseng, WT
;
Feng, MS
;
材料科學與工程學系
;
電子工程學系及電子研究所
The process of interlevel dielectrics (ILD) between poly-Si and metal is critical to device characteristics and reliability. Also, the shrinking design rules demand greater hot carrier reliability, which is strongly influenced by the ILD process. In this paper we describe a process for improving the reliability of 0.35 mu m devices by using modified plasma-enhanced chemical vapor deposited tetraethoxysilane (PECVD-TEOS) N2O-rich or O-2-rich ILD films which contain less hydrogen concentration and excellent moisture resistance, and less mobile ion penetration after chemical-mechanical polishing (CMP), relative to standard PE-TEOS oxides. The hot carrier lifetime and the held isolation device threshold voltage are monitored and compared between devices with ILD layers based on different combinations of subatomespheric O-3-TEOS borophosphorus silicate glass (BPSG), standard PE-TEOS, O-2-rich and N2O-rich oxides. The material characteristics contributing to the reduction in post-CMP mobile ion levels and the improvement in device reliability will be discussed.
Optimality of consecutive and nested tree partitions
(1997-09-01)
Chang, GJ
;
Hwang, FK
;
應用數學系
;
Department of Applied Mathematics
We consider the problem of partitioning the vertex-set of a tree to p parts to minimize a cost function. Since the number of partitions is exponential in the number of vertices, it is helpful to identify small classes of partitions which also contain optimal partitions. Two such classes, called consecutive partitions and nested partitions, have been well studied for the set partition problem, which is a special case of the tree-partition problem when the tree is a path. We give conditions on the optimality of these classes on tree partitions and also extend our results to tree networks. (C) 1997 John Wiley & Sons, Inc.