Browsing by Issue Date, starting with "1999-06-10"

Now showing 1 - 20 of 80535

管管散文名著「請坐」顯待人熱情
(1999-06-10)
九歌
Path integral quantization of the relativistic dyonium system
(1999-06-11)
Chuu, DS
;
Lin, DH
;
電子物理學系
;
Department of Electrophysics
The relativistic dyonium system is solved by the path integral approach. The energy spectra and the discrete as well as continuous wavefunctions are evaluated explicitly.
The prevalence of Giardia and Cryptosporidium in Taiwan water supplies
(1999-06-11)
Hsu, BM
;
Huang, CP
;
Jiang, GY
;
Hsu, CLL
;
環境工程研究所
Giardia and Cryptosporidium have emerged as waterborne pathogens of concern. Thirty-one water samples were collected from nine potable water treatment plants in Taiwan and investigated for the presence of Giardia cysts and Cryptosporidium oocysts. The immunofluorescence assay was used for the simultaneous detection of cysts and oocysts. The frequency of occurrence of cysts was 77.8% for Giardia and 72.2% for Cryptosporidium in 18 raw water samples. Ten out of 13 samples collected from treated water samples showed the presence of cysts, while in 5 out of 13 treated water samples oocysts were detected. The risk assessment for adverse human effects arising from the presence of cysts and oocysts indicates the possibility of waterborne transmission of Giardia and Cryptosporidium infection in Taiwan if water is not adequately treated.
你想跟我一樣推嬰兒車在楓林路上散步嗎?
(1999-06-12)
管管
小詩葉
(1999-06-14)
管管
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
(1999-06-14)
Chen, CC
;
Chang, CY
;
Chien, CH
;
Huang, TY
;
Lin, HC
Temperature-accelerated effects on dielectric breakdown of ultrathin gate oxide with thickness ranging from 8.7 to 2.5 nm are investigated and analyzed. Although superior reliability for ultrathin gate oxide at room temperature has been reported in recent literatures, a strong temperature-accelerated degradation of oxide reliability is observed in this study. Experimental results show that both charge-to-breakdown (Q(bd)) and breakdown field (E-bd) characteristics are greatly aggravated for ultrathin oxide at elevated temperature. The Arrhenius plot also confirms that the activation energies of Q(bd) and E-bd increase significantly as oxide thickness decreases, explaining the higher sensitivity to temperature for thinner oxides. (c) 1999 American Institute of Physics. [S0003-6951(99)02024-0].
Electron inelastic interactions with overlayer systems
(1999-06-15)
Kwei, CM
;
Chiou, SY
;
Li, YC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An overlayer system composed of a thin film on the top of a semi-infinite substrate was studied in this work for electron inelastic interactions. Analytical expressions for the depth-dependent inelastic differential and integral inverse mean free paths were derived for both incident and escaping electrons. The interface (film-substrate) effect and the surface (vacuum-film) effect were analyzed by comparing the results of an overlayer system and a semi-infinite system. It was found that the interface effect extended to several angstroms on both sides of the interface for a 500 eV electron incident into or escaping from the vacuum-SiO2-Si and the vacuum-Au-Ni systems. An application of the spatial-varying inelastic differential inverse mean free paths was made by Monte Carlo simulations of the electron elastic backscattering from an overlayer system. Good agreement was found between results calculated presently and data measured experimentally on the elastic reflection coefficient. (C) 1999 American Institute of Physics. [S0021-8979(99)00712-4].
「飛行」里的「飛行」
(1999-06-15)
管管
Energy-dispersive x-ray diffraction and Raman scattering of Zn1-xMnxSe bulk crystals at high pressure
(1999-06-15)
Yang, CS
;
Ro, CS
;
Chou, WC
;
Lin, CM
;
Chuu, DS
Energy-dispersive x-ray diffraction experiments were carried out to investigate the structure of phase transitions under high pressure. It was found that the zinc blende (B-3) to rock salt (B-1) phase transition pressures of Zn0.93Mn0.07Se and Zn0.76Mn0.24Se bulk crystals are found 11.8+/-1.5 and 9.9+/-0.5 GPa, respectively. The respective bulk moduli are 61.8+/-0.8 and 60.5+/-0.8 GPa. The pressure-induced zinc blende (ZB) to rock salt (RS) structure phase transition is interpreted as a signature of the semiconductor to metal transition for Zn1-xMnxSe. The above interpretation is further corroborated by the observation of the disappearance of the longitudinal optical phonon at the pressure where the ZB to RS structure transition occurs. (C) 1999 American Institute of Physics. [S0021-8979(99)05312-8].
「飛行」里的「飛行」
(1999-06-15)
管管
Process evolution support in concurrent software process language environment
(1999-06-15)
Chou, SC
;
Chen, JYJ
;
資訊工程學系
;
Department of Computer Science
This article describes the process evolution support in concurrent software process language (CSPL) environment. Process evolution refers to dynamically changing process programs during process enactment. It is required in process-centered software engineering environment (PSEE) because: (1) parts of a software process may be unclear during process modeling, and (2) processes may change during enactment. In CSPL, process evolution can be achieved through (1) meta-process or (2) process program change. This article also describes object decomposition in CSPL, which relates to process evolution. CSPL allows decomposing large objects (software products) into sub-objects. With this, the schedule, budget, and developer of each sub-object development can be separately assigned and controlled. (C) 1999 Elsevier Science B.V. All rights reserved.
A posteriori boundary element error estimation
(1999-06-15)
Jou, J
;
Liu, JL
;
應用數學系
;
Department of Applied Mathematics
An a posteriori error estimator is presented for the boundary element method in a general framework. It is obtained by solving local residual problems for which a local concept is introduced to accommodate the fact that integral operators are nonlocal operators. The estimator is shown to have an upper and a lower bound by the constant multiples of the exact error in the energy norm for Symm's and hypersingular integral equations. Numerical results are also given to demonstrate the effectiveness of the estimator for these equations. It can be used for adaptive h, p, and hp methods. (C) 1999 Elsevier Science B.V. All rights reserved.
「飛行」里的「飛行」
(1999-06-15)
管管
「飛行」里的「飛行」
(1999-06-15)
管管
Aging kinetics of heat-treated Zn-4Al-3Cu alloy
(1999-06-18)
Li, BJ
;
Chao, CG
;
材料科學與工程學系
;
Department of Materials Science and Engineering
他們砍了我們養蠶的桑樹
(1999-06-19)
管管
Homeotropic liquid-crystal device with two metastable states
(1999-06-21)
Chen, LY
;
Chen, SH
;
光電工程學系
;
Department of Photonics
We report a homeotropic liquid-crystal device which has two metastable states when an electric field is applied. The behaviors of these two metastable states are similar to the bistable twist nematic device. We control this device electrically in the rising period to switch it from the homeotropic state toward either the twist or homogeneous state. It not only behaves as a conventional homeotropic cell but also provides another twist structure for further applications. The back-flow effect in the rising period plays an important role in the switching mechanism. The experimental results are described in this letter. (C) 1999 American Institute of Physics. [S0003-6951(99)01525-9].
A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization
(1999-06-22)
Lin, CF
;
Tseng, WT
;
Feng, MS
;
Wang, YL
;
材料科學與工程學系
A multilayer thin film structure (SiO2/SiNx/SiO2) with a one-step chemical-mechanical polish (CMP) process is developed for shallow trench filling and planarization for ULSI devices in the quarter micron regime. By fine-tuning the plasma-enhanced chemical vapor deposition (PECVD) conditions we successfully modified the stoichiometry and other characteristics of the as-deposited SiNx and oxide films. As these film characteristics are changed, the CMP removal rate selectivity between sacrificial oxide and nitride stopper layer can also be adjusted. Correspondingly, the CMP process latitude for shallow trench isolation in 0.25 mu m memory devices can be broadened by sequentially depositing multilayered oxide and nitride films with adjustable characteristics and CMP removal rates. Dishing-free wide trench areas with excellent planarity can be achieved through the integration of the proposed multilayered PECVD oxide/nitride scheme and the one-step CMP process. (C) 1999 Elsevier Science S.A. All rights reserved.
開「樟」天岸馬
(1999-06-26)
管不着
不要讓你的乳房長青苔
(1999-06-26)
管管