Browsing by Issue Date, starting with "2002-12-18"

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下放的海外一首
(2002-12-18)
管管
Fiber-ring laser-based fiber grating sensor system using self-healing ring architecture
(2002-12-20)
Peng, PC
;
Tseng, HY
;
Chi, S
;
光電工程學系
;
Department of Photonics
This paper presents a self-healing fiber grating sensor system and demonstrates its effectiveness. The self-healing function is constructed by using a primary ring architecture incorporated with several ring sub-networks. To enhance the sensing signal when a breakpoint suddenly occurs in the network, we employ a fiber-ring laser-based sensor system. The network survivability of an 11-point FBG sensor is experimentally examined. The proposed fiber grating sensor system can increase the reliability of a sensing network. (C) 2002 Wiley Periodicals, Inc.
Effect of titanium substitution on film structure and ferroelectric properties of Sr-deficient Sr0.75Bi2.35Ta2O9 thin films
(2002-12-20)
Chen, SY
;
Lan, BC
;
Taso, CS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ferroelectric films of bismuth-containing layered perovskite Sr0.75Bi2.35(Ta2-x,Ti-x)O-9 (x=0-0.8) have been prepared using a metal organic decomposition method. The effects of Ti substitution on the rnicrostructure evolution and ferroelectric properties of Sr0.75Bi2.35Ta2O9 films were investigated. A maximum remanent polarization of 2P(r)=30.7 muC/cm(2) was obtained for the Sr0.75Bi2.35Ta1.8Ti0.2O9 film as compared to Sr0.75Bi2.35Ta2O9 films (19.6 muC/cm(2)) annealed at 800 degreesC in air. The Ti substitution for Ta leads to charge compensation for the self-produced positive Bi-Sr(.), due to the occupation of Bi on Sr vacancies and is responsible for the increase in leakage resistance. The leakage current density as low as 2 X 10(-8) A/cm(2) can be obtained at an applied electric field of 100 kV/cm. Substitution of Ti for Ta shows a positive effect on the fatigue endurance of Sr-deficient Sr0.75Bi2.35Ta2O9 film. (C) 2002 Elsevier Science B.V. All rights reserved.
Low-temperature series expansions for square-lattice Ising model with first and second neighbour interactions
(2002-12-20)
Kao, YM
;
Chen, M
;
Lin, KY
;
物理研究所
;
Institute of Physics
We have calculated the low-temperature series expansions of the spontaneous magnetization and the zero-field susceptibility of the square-lattice ferromagnetic Ising model with first-neighbour interaction J(1) and second-neighbour interaction J(2) to the 30th and 26th order respectively by computer. Our results extend the previous calculations by Lee and Lin to six more orders. We use the Pade approximants to estimate the critical exponents and the critical temperature for different ratios of R = J(2)/J(1). The estimated critical temperature as a function of R agrees with the estimation by Oitmaa from high-temperature series expansions.
Thermal decomposition of iso-propanol: First-principles prediction of total and product-branching rate constants
(2002-12-22)
Bui, BH
;
Zhu, RS
;
Lin, MC
;
交大名義發表
;
National Chiao Tung University
The unimolecular decomposition of iso-C3H7OH has been studied with a modified GAUSSIAN-2 method. Among the six low-lying product channels identified, the H2O-elimination process (2) via a four-member-ring transition state is dominant below 760 Torr over the temperature range 500-2500 K. At higher pressures and over 1200 K, the cleavage of a C-C bond by reaction (1) producing CH3+CH3C(H)OH is predicted to be dominant. The predicted low- and high-pressure limit rate constants for these two major product channels can be given by k(1)(0)=6.3x10(42) T-16.21 exp(-47 400/T), k(2)(0)=7.2x10(44) T-14.70 exp(-35 700/T) cm(3) molecule(-1) s(-1), k(1)(infinity)=8.0x10(29) T-3.75 exp(-45 800/T), and k(2)(infinity)=2.0x10(6) T-2.12 exp(-30 700/T) s(-1), respectively. Predicted k(1) values compare reasonably with available experimental data; however, k(2) values are lower than the experimentally determined apparent rate constant for C3H6 formation, which may derive in large part from secondary radical reactions. Other minor decomposition products were predicted to have the barriers H-2+CH3C(O)CH3, E-3(0)=82.8 kcal/mol; H2O+(CH3CCH3)-C-1, E-4(0)=77.9 kcal/mol; CH4+CH3C(H)O, E-5(0)=84.3 kcal/mol; and CH4+(CH3COH)-C-1, E-6(0)=81.9 kcal/mol. The triplet-singlet energy gap for CH3CCH3 was predicted to be 5.2 kcal/mol, favoring the singlet state. (C) 2002 American Institute of Physics.
Synthesis of 2,5-disubstituted thienosultines and their thermal reactions with dienophiles and nucleophiles
(2002-12-27)
Liu, WD
;
Chi, CC
;
Pai, IF
;
Wu, AT
;
Chung, WS
The 2,5-disubstituted thienosultines (5,7-disubstituted 1,4-dihydro-1H-3lambda(4)-thieno[3,4-d][2,3]oxathiin-3-oxides) 5a-d were prepared from the corresponding dichlorides 4a-d with the commercially available Rongalite (sodium formaldehyde sulfoxylate) in 17-60% yields. When heated in the presence of electron-poor dienophiles, sultines 5a-d underwent elimination of SO2, and the resulting non-Kekule biradicals 7a-d were intercepted as the 1:1 adducts 8-12 in good to excellent yields. The pyrolysis of sultines and sulfolenes with different concentrations of dienophiles revealed that either a preequilibrium between starting reagents and biradical species or Diels-Alder and retroDiels-Alder reaction mechanisms may be involved; however, more work is necessary to establish the proposed mechanisms. Reaction of sultine 5b with nBuLi was found to undergo a nucleophilic ring-opening reaction to give sulfinyl alcohol 17 after H2O workup. When sultine 5a was heated in benzene in a sealed tube in the presence of methanol, methanol-d4, or 2-mercaptoethanol, the respective 1:1 trapping adducts 19-21 as well as the rearranged sulfolene 6a were isolated in similar amounts. The isolation of adducts 19-21 may be explained by the involvement of either biradical or ionic intermediates during the pyrolysis.
C-4-saturated bipartite graphs
(2002-12-28)
Bryant, DE
;
Fu, HL
;
應用數學系
;
Department of Applied Mathematics
Let H be a graph. A graph G is said to be H-free if it contains no subgraph isomorphic to H. A graph G is said to be an H-saturated subgraph of a graph K if G is an H-free subgraph of K with the property that for any edge e is an element of E(K)E(G), G boolean OR {e} is not H-free. We present some general results on K-s,K-t-saturated subgraphs of the complete bipartite graph K-m,K-n and study the problem of finding, for all possible values of q, a C-4-saturated subgraph of K., having precisely q edges. (C) 2002 Elsevier Science B.V. All rights reserved.
A novel LC-Tank ESD protection design for giga-Hz RF circuits
(2003)
Ker, MD
;
Chou, CI
;
Lee, CM
;
電機學院
;
College of Electrical and Computer Engineering
To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-mum CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
(2003)
Chin, A
;
Chan, KT
;
Huang, CH
;
Chen, C
;
Liang, V
High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
晶體材料之載子自旋與同調聲子動力學之研究(II)
(2003)
黃中垚
;
JUNG Y.HUANG
;
國立交通大學光電工程研究所
二氧化鈦完整披覆後NiTi形狀記憶合金表面之腐蝕行為
(2003)
涂肇嘉
;
國立交通大學材料科學與工程學系
高速公路電子收費車道最適配置之研究
(2003)
黃承傳
;
Cherng-Chwan Hwang
;
國立交通大學交通運輸研究所
曲線齒圓柱型齒輪特性研究(I)
(2003)
蔡忠杓
;
TSAY CHUNG-BIAU
;
國立交通大學機械工程研究所
EEG alpha blocking correlated with perception of inner light during Zen meditation
(2003)
Lo, PC
;
Huang, ML
;
Chang, KM
;
電控工程研究所
;
Institute of Electrical and Control Engineering
According to the experimental results and practitioners' subjective experience, we report some hypotheses that may account for meditative phenomena during the practice of Zen-Buddhism. Orthodox Zen-Buddhist practitioners, aiming to prove the most original true-self, discover and uncover the inner energy or light on the way towards their goal. Perception of the inner light can be comprehended as resonance. Uncovering the inner energy optimizes physiological and mental health. In the meditation experiment, a significant correlation was observed between perception of the inner light and electroencephalographic (EEG) alpha blockage. We further examined this phenomenon by recording the EEG from subjects during a blessing that the subjects did not know being given. During the blessing period, significant alpha blocking was observed in experimental subjects who had been practicing meditation for years in preparation for being in resonance with the inner light. This report provides a new insight into the debate that meditation benefits our health.
SARS防護系統技術整合應用計畫
(2003)
曲新生
;
CHU, HSIN-SEN
;
國立交通大學機械工程學系
Electrostatic discharge implantation to improve machine-model ESD robustness of stacked NMOS in mixed-voltage I/O interface circuits
(2003)
Ker, MD
;
Hsu, HC
;
Peng, JJ
;
電機學院
;
College of Electrical and Computer Engineering
A novel electrostatic discharge (TSD) implantation method is proposed to significantly improve machine-model (MM) ESD robustness of NMOS device in stacked configuration (stacked NMOS). By using this ESD implantation method, the ESD current is discharged far away from the surface channel of NMOS, therefore the stacked NMOS in the mixed-voltage I/O interface can sustain a much higher ESD level, especially under the MM ESD stress. The MM ESD robustness of the stacked NMOS with a device dimension of W/L=300mum/0.5 mum for each NMOS has been successfully improved from the original 358 V to become 491 V in a 0.25-mum CMOS process. This ESD implantation, method with the n-type impurity is fully process-compatible to general sub-quarter-micron CMOS processes.
Variation of electrical properties of Sro(0.8)Bi(2+x)Ta(2)O(9+delta) ferroelectric thin films with bismuth content
(2003)
Chou, HY
;
Tseng, TY
;
Chen, TM
;
應用化學系
;
電子工程學系及電子研究所
In this work, we have investigated the effect of bismuth content on electrical properties of Sr0.8Bi2+xTa2O9+delta (SBT) thin films, obtained by using the metallorganic decomposition technique. The SBT precursor solution was prepared using high purity strontium acetate, bismuth acetate and tantalum ethoxide as the starting materials and acetic acid as the solvent. Thin films were deposited on Ir(50nm)/SiO2(100Mn)/Si substrates by spin coating with precise control of the solution viscosity and spin speed. As-deposited films were dried at 150degreesC for 10 min followed by pyrolysis at 400degreesC for 30 min in static air to remove the solvent and organic impurities. The films were then post-annealed at 650degreesC for 30 min in ambient oxygen atmosphere. The crystallinity of SBT thin films containing various bismuth levels was characterized by X-ray diffraction (XRD). The 30% Bi excess SBT thin films exhibited preferentially (115) oriented phase. The XRD pattern showed all major peaks corresponding to SBT phase. The microstructure, P-E hysteresis loops and leakage current of SBT films were found to be dependent on the bismuth content.
An introduction
(Routledge, 2003)
S. Yoshimi
MEPG-4/21 SoC設計及新世代行動通訊之研究---子計畫I：應用於多媒體晶片系統之低電壓高頻寬嵌入式記憶體(I)
(2003)
黃威
;
WeiHwang
;
國立交通大學電子工程學系
垂直圓柱容器中向下強制氣流流過一水平加熱晶圓之渦旋流結構與相關熱傳特性研究(III)
(2003)
林清發
;
LIN TSING-FA
;
國立交通大學機械工程研究所