Browsing by Issue Date, starting with "2003-06-15"

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管管作品二十七首
(2003-06-15)
管管
Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
(2003-06-15)
Lee, HM
;
Yang, TH
;
Luo, GL
;
Chang, EY
;
材料科學與工程學系
Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like. [DOI: 10.1143/JJAP.42.L718].
管管作品二十七首
(2003-06-15)
管管
Formation of interfacial layer during reactive sputtering of hafnium oxide
(2003-06-15)
Tsui, BY
;
Chang, HW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Hafnium oxide is one of the most promising high dielectric constant materials to replace silicon dioxide as the gate dielectric. To take the advantages of high dielectric constant of HfO2 thoroughly, the relatively low dielectric constant interfacial layer must be controlled carefully. In this work, the formation of an interfacial SiO2 layer at the HfO2/Si interface was studied comprehensively. It is observed that during reactive sputtering deposition of the HfO2 layer, a very thick interfacial SiO2 layer, thicker than 3 nm, would be grown. O-radical signals, instead of O-2-radicl signals, are detected in the sputtering chamber. An O-radical enhanced oxidation model is proposed to explain such an unusual thick SiO2 layer. The adoption of a two-step deposition method, the thickness of interfacial SiO2 layer can be reduced only if the bottom Hf layer is thicker than 5 nm. However, the reduction of effective oxide thickness would be limited. Reoxidation of Hf film sounds a better choice. A 1.0-1.5-nm-thick interfacial SiO2 layer is still observed. This implies that the traced oxygen in the sputtering chamber plays a critical role on the formation of the interfacial layer. It is thus concluded that reactive sputtering is not a suitable method to prepare a HfO2 layer with a negligible interfacial SiO2 layer. Reoxidation of Hf film is a better choice, but the oxygen content in the sputtering chamber must be well controlled. (C) 2003 American Institute of Physics.
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
Ring embedding in faulty pancake graphs
(2003-06-15)
Hung, CN
;
Hsu, HC
;
Liang, KY
;
Hsu, LH
;
資訊工程學系
In this paper, we consider the fault hamiltonicity and the fault hamiltonian connectivity of the pancake graph P-n. Assume that F subset of or equal to V(P-n) boolean OR E(P-n). For n greater than or equal to 4, we prove that P-n - F is hamiltonian if F less than or equal to (n - 3) and P-n - F is hamiltonian connected if F less than or equal to (n - 4). Moreover, all the bounds are optimal. (C) 2003 Elsevier Science B.V. All rights reserved.
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
Brother trees: A family of optimal 1(p)-hamiltonian and 1-edge hamiltonian graphs
(2003-06-15)
Kao, SS
;
Hsu, LH
;
資訊工程學系
;
Department of Computer Science
In this paper we propose a family of cubic bipartite planar graphs, brother trees, denoted by BT(n) with n greater than or equal to 2. Any BT(n) is hamiltonian. It remains hamiltonian if any edge is deleted. Moreover, it remains hamiltonian when a pair of nodes (one from each partite set) is deleted. These properties are optimal. Furthermore, the number of nodes in BT(n) is 6. 2(n) - 4 and the diameter is 2n + 1. (C) 2003 Elsevier Science B.V. All rights reserved.
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
管管作品二十七首
(2003-06-15)
管管
Self-embedded nanocrystalline chromium carbides on well-aligned carbon nanotips
(2003-06-16)
Tsai, CL
;
Hsu, JH
;
Chen, CF
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Well-aligned carbon nanotips embedded with nanocrystalline chromium carbide were directly grown on a substrate by microwave plasma chemical vapor deposition. These nanomaterials grew up to about 1 mum long and 60 nm in diameter, yielding a high aspect ratio. In comparison between carbon nanotubes with hollow structure, transmission electron microscopy images show its solid body, which is made of graphite along with nanocrystalline chromium carbide on the tip. These nanomaterials perform well in field emission applications with a turn-on field of 1.38 V/mum and 565 muA/cm(2) at 2.2 V/mum. Our result confirms the possibility of the self-embedded nanocrystalline materials on the top of carbon nanotips. (C) 2003 American Institute of Physics.
Role of extrinsic atoms on the morphology and field emission properties of carbon nanotubes
(2003-06-16)
Chan, LH
;
Hong, KH
;
Xiao, DQ
;
Hsieh, WJ
;
Lai, SH
Extrinsic atoms were doped into multiwalled carbon nanotubes (MWCNTs) using microwave plasma-enhanced chemical vapor deposition. Doped nitrogen atoms alter the original parallel graphenes into highly curved ones including some fullerene-like structures. Doped nitrogen atoms could replace carbon atoms in MWCNTs and therefore increase the electronic density that enhances the electron field emission properties. On the other hand, the incorporation of boron into the carbon network apparently increases the concentration of electron holes that become electron traps and eventually impedes the electron field emission properties. Fowler-Nordheim plots show two different slopes in the curve, indicating that the mechanism of field emission is changed from low to high bias voltages. beta values could be increased by an amount of 42% under low bias voltages and 60% under high bias voltages in the N-doped MWCNTs, but decreased by an amount of 8% under low bias region and 68% under high bias voltage in the B-doped MWCNTs. (C) 2003 American Institute of Physics.
最短篇娘鞋
(2003-06-17)
管管