Browsing by Issue Date, starting with "2003-06-17"

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最短篇娘鞋
(2003-06-17)
管管
薄膜電晶體結構及其製造方法
(2003-06-21)
張國明
;
鐘元鴻
本案係為一種薄膜電晶體結構及其製造方法，其步驟包含提供一絕緣基板；於該絕緣基板上形成一源/汲極層、一主閘極絕緣層、以及一第一導體層；對該第一導體層進行蝕刻以定義出一主閘極導體結構；於該主閘極導體結構上依序形成一子閘極絕緣層及一第二導體層；以及對該第二導體層及該子閘極絕緣層進行蝕刻以定義出一第一子閘極導體結構、一第二子閘極導體結構、一第一子閘極絕緣層、以及一第二子閘極絕緣層。
Comparison of visible fluorescence properties between sol-gel derived Er3+-Yb3+ and Er3+-Y3+ co-doped TiO2 films
(2003-06-23)
Chen, SY
;
Ting, CC
;
Hsieh, WF
;
材料科學與工程學系
;
光電工程學系
Both Er3+-Yb3+ and Er3+-Y3+ co-doped TiO2 films were prepared on fused silica by sol-gel processes. The effect of doping concentration upon the up-conversion fluorescence of Yb3+-Er3+ and Er3+-Y3+ co-doped TiO2 systems will be focused in this investigation. Although the influence of Yb3+ and Y3+ ions on the structural of Er3+-TiO2 host material is almost the same, different up-conversion emissions are observed. Both Er3+-doped and Er3+-Y3+ co-doped TiO2 films exhibit the up-conversion emission with green and red light. However, much stronger intensity of red light relative to green light is observed for the Er3+-Y3+ co-doped TiO2 system. For Er3+ (5 mol%)-Y3+ co-doped TiO2 samples, the relative intensity ratio (I-R/I-G) rapidly decreases with the increase of Y3+ concentration above 10 mol%. On the contrary, the relative intensity ratio (I-R/I-G) increases with increasing Yb3+ concentration for Er3+(5 mol%)-Yb3+ co-doped TiO2 samples. The up-conversion emission in the Er3+-Y3+ co-doped TiO2 system belongs to a two-photon absorption up-conversion process. However, the overall up-conversion efficiency in the Er3+-Yb3+ co-doped TiO2 system could be contributed from the complicated mechanisms. (C) 2003 Elsevier Science B.V. All rights reserved.
Purification of human plasma haptoglobin by hemoglobin-affinity column chromatography
(2003-06-25)
Liau, CY
;
Chang, TM
;
Pan, JP
;
Chen, WL
;
Mao, SJT
Haptoglobin (Hp) is an acute-phase protein; its plasma levels increase consistently in response to infection and inflammation. The concentration of human plasma Up is ranged between 1 and 1.5 mg/ml. Similar to blood type, individual human Hp is classified as Hp 1-1, 2-1, or 2-2. The structural and functional analysis of the Hp, however, has not been studied in detail due to its difficult isolation procedure. Previously, we reported a single step for the purification of porcine Hp. In this study, we established a purification method using a high capacity hemoglobin-affinity column. Briefly, DEAE-purified human hemoglobin was first coupled to Sepharose 4B to prepare an affinity column in a 15-ml bed volume. Following a flow through of human plasma and an extensive wash, the bound material was eluted with a solution of 0.15 M NaCl, pH 11 (adjusted by ammonium), to remove low-affinity bound proteins. The high-affinity bound Hp was then eluted with 0.15 M NaCl containing 5 M urea, pH 11, and collected in tubes containing 100 mul of 1 M Tris buffer, pH 7.0. The biological activity of dialyzed Hp was retained as it formed a complex with hemoglobin on, a sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE). Using this procedure, approximately 10 mg of Hp 1-1, with homogeneity greater than 96%, was obtained from 15 nil of human plasma. Affinity purified Up 2-1 or 2-2, however, contained trace amounts of apoA-I with the similar approach. The Hp could be further purified by HPLC using a Superose 12 gel-permeation chromatography, if desired, to achieve 100% purity. All the phenotypes of purified Hp consisted of alpha and beta chains on SDS-PAGE in the presence of a reducing reagent, further confirmed by a Western blot analysis. We conclude that human hemoglobin-affinity column was most suitable for the isolation of Hp 1-1 in large quantities. Whereas, one additional step using a gel-permeation was necessary for that of Hp 2-1 and 2-2. (C) 2003 Elsevier Science B.V. All rights reserved.
Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films
(2003-06-26)
Lin, YD
;
Wu, YS
;
Chao, CW
;
Hu, GR
;
材料科學與工程學系
Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.
The national Si-Soft Project
(2003-06-30)
Chang, CY
;
Trappey, CV
;
管理科學系
;
Department of Management Science
Taiwan's electronics industry emerged in the 1960s with the creation of a small but well planned integrated circuit (IC) packaging industry. This industry investment led to bolder investments in research, laboratories, and the island's first semiconductor foundries in the 1980s. Following the success of the emerging IC manufacturers and design houses, hundreds of service firms and related industries (software, legal services, substrate, chemical, and test firms among others) opened for business and completed Taiwan's IC manufacturing supply chain. The challenge for Taiwan's electronics industry is to take the lead in the design, manufacture, and marketing of name brand electronic products. This paper introduces the Si-Soft (silicon software) Project, a national initiative that builds on Taiwan's achievements in manufacturing (referred to as Si-Hard or silicon hardware) to launch a new wave of companies. These firms will contribute to the core underlying technology (intellectual property) used in the creation of electronic products. (C) 2003 Elsevier Science B.V. All rights reserved.
Novel post CMP cleaning using buffered HF solution and ozone water
(2003-06-30)
Yeh, CF
;
Hsiao, CW
;
Lee, WS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Post chemical mechanical polishing (CMP) cleaning is a key process for copper (Cu) CMP in dual damascene interconnection technology. During the post CMP cleaning, it is an important issue to minimize organic and Cu contamination residues on the dielectric surface. This study proposed a novel post CMP cleaning using HAL buffer hydrofluoric (BHF) solution and ozone (O-3) water cleaning. The performance of the proposed cleaning technology was investigated and compared to conventional citric solution cleaning, which is currently used in post Cu CMP cleaning. From roughness, contamination residues and electrical characteristics, the proposed cleaning technology showed better performance than citric solution cleaning did. This excellent cleaning performance is attributed to the surface etching and contamination elimination effect of HAL BHF solution and O-3 water. Based on the experimental results, the proposed cleaning technology is feasible and superior to the conventional post CMP cleaning. (C) 2003 Elsevier Science B.V. All rights reserved.
Identification of trans-regulatory factors of the efflux pumps involved in drug resistance in Candida albicans.
(2003-07-01)
Chen, CG
;
Shih, HI
;
Yang, YL
;
Lo, HJ
;
生物科技學系
Fiber-lens-based module for optical recording applications
(2003-07-01)
Tien, CH
;
Chou, HL
;
Chiu, Y
;
Hsu, W
;
Milster, TD
An optical fiber-lens-type pickup with numerical aperture (NA) congruent to 0.27 was demonstrated for thermal recording of continuous 1.6-mum-wide lines on MO disks with 50% throughput efficiency. Moreover, a Si-micromachined near-field module integrated with a fiber lens, solid immersion lens (SIL), and submicron aperture was fabricated to improve the mechanical fragility and increase the NA of the optical-fiber-based pickup. The preliminary configuration design and measurement suggest the feasibility of the module as a submicron heat source for high-density optical data storage.
An enhanced congestion avoidance mechanism for TCP vegas
(2003-07-01)
Chan, YC
;
Chan, CT
;
Chen, YC
;
資訊工程學系
;
Department of Computer Science
TCP Vegas detects network congestion in the early stage and successfully prevents periodic packet loss that usually occurs in traditional schemes. It has been demonstrated that TCP Vegas achieves much higher throughput than TCP Reno. However, TCP Vegas cannot prevent unnecessary throughput degradation when congestion occurs in the backward path. In this letter, we propose an enhanced congestion avoidance mechanism for TCP Vegas. By distinguishing whether congestion occurs in the forward path or not, it significantly improves the connection throughput when the backward path is congested.
On topology improvement of a packet radio network by power control
(2003-07-01)
Huang, CF
;
Tseng, YC
;
資訊工程學系
;
Department of Computer Science
The packet radio network (PRN) is an attractive architecture to support wireless data communication. The code assignment problem in PRN is a classical problem that has been extensively studied. However, in this paper, we observe that the power control issue has been ignored by most works but may have significant impact on the PRN's performance. Given a set of PRN stations, the network topology can be changed by adjusting each station's transmission power. All existing works, nevertheless, assume that the network topology is given before solving the code assignment problem. In this paper, we regard code assignment as an independent problem and show how to improve the network topology by power adjustment without violating the original code assignment. The improvement in topology (such as more links in the network) may result in improvement in network throughput. Through simulations, we demonstrate that although the code assignment problem is NP-complete, our power adjustment schemes can easily improve the network performance by about 10% with polynomial costs.
A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
(2003-07-01)
Li, YM
;
友訊交大聯合研發中心
;
D Link NCTU Joint Res Ctr
Various self-consistent semiconductor device simulation approaches require the solution of Poisson equation that describes the potential distribution for a specified doping profile (or charge density). In this paper, we solve the multi-dimensional semiconductor nonlinear Poisson equation numerically with the finite volume method and the monotone iterative method on a Linux-cluster. Based on the nonlinear property of the Poisson equation, the proposed method converges monotonically for arbitrary initial guesses. Compared with the Newton's iterative method, it is easy implementing, relatively robust and fast with much less computation time, and its algorithm is inherently parallel in large-scale computing. The presented method has been successfully implemented; the developed parallel nonlinear Poisson solver tested on a variety of devices shows it has good efficiency and robustness. Benchmarks are also included to demonstrate the excellent parallel performance of the method. (C) 2003 Elsevier B.V. All rights reserved.
DiffServ edge routers over network processors: Implementation and evaluation
(2003-07-01)
Lin, YD
;
Lin, YN
;
Yang, SC
;
Lin, YS
;
資訊工程學系
Network processors are emerging as a programmable alternative to the traditional ASIC-based solutions in scaling up the data plane processing of network services. This work, rather than proposing new algorithms, illustrates the process of, and examines the performance issues in, prototyping a DiffServ edge router with IXP1200. The external benchmarks reveal that although the system can scale to wire speed of 1.8 Gb/s in simple IP forwarding, the throughput declines to 180-290 Mb/s when. DiffServ is performed due to the double bottlenecks of SRAM and microengines. Through internal benchmarks, the performance bottleneck was found to be able to shift from one place to another en different network services and algorithms. Most of the results reported here should be applicable to other NPs since they have similar architectures and components.
Stability investigation of single-wafer process by using a spin etcher
(2003-07-01)
Kang, TK
;
Wang, CC
;
Tsui, BY
;
Yang, WL
;
Chien, FT
Etch rate instability was found in a spin etcher. When chemical was pumped to the spin etcher, the flow rate became unstable; possibly resulting in a chemical deficiency due to low mass transport at the wafer edge. Consequently, the etch rate and etch uniformity are unstable. The detailed etch mechanism has been investigated and the mass transport deficiency can be avoided. Less than 2% of etch nonuniformity and a stable process can be achieved by achieving a stable flow rate and control of the surface reaction over the whole wafer in spin etching. (C) 2003 The Electrochemical Society.
A priority TCAM IP-Routing lookup scheme
(2003-07-01)
Lin, PC
;
Chang, CJ
;
電信工程研究所
;
Institute of Communications Engineering
A priority TCAM IP-routing lookup scheme, which combines a priority ternary content addressable memory (TCAM) technique with a compact IP-routing lookup scheme, is proposed in this letter. It not only completes an IP-routing lookup with two memory accesses but also achieves small lookup table size and fast table reconstruction time.
Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
(2003-07-01)
Chiang, CC
;
Chen, MC
;
Ko, CC
;
Wu, ZC
;
Jang, SM
This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical vapor deposited (PECVD) alpha-SiC:H silicon carbide films (with k-values less than 5) deposited using trimethylsilane, (CH3)(3)SiH (3MS) and tetramethylsilane, (CH3)(4)Si (4MS) organosilicate gases. It is found that the 4MS alpha-SiC:H film contains a higher content of carbon and has a lower dielectric constant. Both of the 3MS and 4MS alpha-SiC:H films are thermally stable at temperatures up to 500degreesC. However, degraded barrier property and moisture resistance were observed for the 4MS alpha-SiC:H film; this is attributed to the porosity enrichment caused by the film's high carbon content. The 3MS alpha-SiC:H film, which exhibits a superior Cu-barrier property, is a potential candidate for replacing the higher dielectric constant Si3N4 film as a Cu-cap barrier and etching stop layer in the Cu damascene structure.
Automatic schedule integration for highway projects
(2003-07-01)
Dzeng, RJ
;
Wang, WC
;
土木工程學系
;
Department of Civil Engineering
The construction of a highway/expressway, which involves a complex combination of roads, bridges, and tunnels, is generally separated into several projects. Various contractors thus execute different projects and often apply differing scheduling practices. Since all projects involved in highway construction must be completed for the highway to be useful, the management of the various projects should preferably be integrated. To assist project controllers in schedule integration, this study proposes algorithms based on standardized codes and network modules. A computer system was also designed to help contractors use these modules for scheduling, and ultimately to let project controllers combine these schedules electronically. A questionnaire survey and industry feedback revealed the potential benefits of using the proposed algorithms for generating and integrating schedules, respectively. Contractors' computation capabilities must be improved before the proposed scheduling algorithms can be fully implemented. (C) 2003 Elsevier Science B.V. All rights reserved.
A dynamic thermal management circuit for system-on-chip designs
(2003-07-01)
Chiueh, H
;
Draper, J
;
Choma, J
;
電信工程研究所
;
Institute of Communications Engineering
A novel fully integrated dynamic thermal management circuit for system-on-chip design is proposed. Instead of worst-case thermal management used in conventional systems, this design yields continual monitoring of thermal activity and reacts to specified conditions. With the above system, we are able to incorporate on-chip power/speed modulation and integrated multi-stage fan controllers, which allows us to achieve nominal power dissipation and ensure operation within specification. Both architecture and circuitry are optimized for modern system-on-chip designs. This design yields intricate control and optimal mangement with little system overhead and minimum hardware requirements, as well as provides the flexibility to support different thermal mangement algorithms.
Minimum copper loss flux-weakening control of surface mounted permanent magnet synchronous motors
(2003-07-01)
Chen, JJ
;
Chin, KP
;
機械工程學系
;
Department of Mechanical Engineering
This study presents a novel current loop design method capable of automatic flux-weakening control with minimum copper loss for surface mounted permanent magnet synchronous motors (SPMSM). The proposed current controller can automatically re-compute the d-axis current command to defer output voltage saturation. Consequently, the motor operations in the flux-weakening region are also contained in the stable operating region. Analysis results indicate that since the output voltage vector in the flux-weakening region produced by this controller is consistently on the boundary of the maximum output voltage vector allowed by the inverter, the corresponding flux-weakening current is the optimal value in the sense of minimum copper loss. This minimum copper loss design differs from the maximum output torque design and the constant power design of the flux-weakening control methods found in the literature. Experimental results further demonstrate the feasibility of the proposed current controller and its ability to maximize the speed range of the motor drive for a given inverter capacity.
An untraceable blind signature scheme
(2003-07-01)
Hwang, MS
;
Lee, CC
;
Lai, YC
;
資訊工程學系
;
Department of Computer Science
In this paper, the authors intend to propose a new untraceable blind signature scheme based on the RSA cryptosystem. This paper applies the Extended Euclidean algorithm to our blind signature scheme. Compared with other blind signature schemes, our proposed scheme can meet the all requirements of a blind signature scheme. The security of the proposed scheme, as did that of the RSA cryptosystem, depends on the difficulty of solving the factoring problem.