Browsing by Issue Date, starting with "2003-10-16"
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Item type:Item, A fuzzy-based customer classification method for demand-responsive logistical distribution operations(2003-10-16) ;Hu, TL ;Sheu, JB ;運輸與物流管理系 註:原交通所+運管所Department of Transportation and Logistics ManagementIn some cases, customer classification is important for the development of advanced logistical distribution strategies in response to the growing complexity in business logistical markets. This paper presents a new approach that can be employed to cluster customers before executing fleet routing in logistical operations. The proposed approach is developed on the basis of fuzzy clustering techniques, and involves three sequential mechanisms including: (1) binary transformation, (2) generation of a fuzzy correlation matrix, and (3) customer clustering. Such a customer clustering method should be performed prior to vehicle dispatching and routing in the process of goods distribution. The proposed methodology clusters customers on the basis of their demand attributes, rather than the static geographic property which is considered extensively in most published vehicle routing algorithms. In addition to methodology development, a case study was conducted to demonstrate the potential advantages of the proposed fuzzy clustering based method. It is expected that this study can stimulate more research on time-based logistics control and management. (C) 2002 Elsevier B.V. All rights reserved.Item type:Item, High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers(2003-10-16) ;Hsueh, TH ;Kuo, HC ;Lai, FI ;Laih, LHWang, SCThe single transverse mode operation of VCSELs with low threshold current (I-th) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10 Gbit/s is reported. The laser has continuous-wave operation and employs oxygen implantation, MOCVD regrowth and selective oxidation on semi-insulating GaAs substrate.Item type:Item, Effect of the Ca content on the electronic structure of Pb1-xCaxTiO3 perovskites(2003-10-20) ;Jan, JC ;Kumar, KPK ;Chiou, JW ;Tsai, HMShih, HLThis study performs O K- and Ti L-3,L-2-edge x-ray absorption near-edge structure (XANES) measurements and first-principles pseudopotential calculations for the electronic structures of ABO(3)-type Pb1-xCaxTiO3 (x=0-1) perovskites. The features in the O K-edge XANES spectra are found to be contributed primarily by hybridization between O 2p and Ti 3d, Pb 6p, and Ca 3d orbitals. The O K-edge XANES spectra reveal that partial substitution of A cations, Pb, by Ca not only decreases O 2p-Pb 6p but also O 2p-Ti 3d hybridization. The Ti L-3,L-2-edge measurements find that the off-center displacement of Ti, and hence, ferroelectricity persist up to a Ca concentration between 0.3 and 0.4. (C) 2003 American Institute of Physics.Item type:Item, Morphological transformation of PS-b-PEO diblock copolymer by selectively dispersed colloidal CdS quantum dots(2003-10-21) ;Yeh, SW ;Wei, KH ;Sun, YS ;Jeng, USLiang, KSItem type:Item, Power-saving protocols for IEEE 802.11-based multi-hop ad hoc networks(2003-10-22) ;Tseng, YC ;Hsu, CS ;Hsieh, TY ;資訊工程學系Department of Computer SciencePower-saving is a critical issue for almost all kinds of portable devices. In this paper, we consider the design of power-saving protocols for mobile ad hoc networks (MANETs) that allow mobile hosts to switch to a low-power sleep mode. The MANETs being considered in this paper are characterized by unpredictable mobility, multi-hop communication, and no clock synchronization mechanism. In particular, the last characteristic would complicate the problem since a host has to predict when another host will wake up to receive packets. We propose three power management protocols, namely dominating-awake-interval, periodically-fully-awake-interval, and quorum-based protocols, which are directly applicable to IEEE 802.11-based MANETs. As far as we know, the power management problem for multi-hop MANETs has not been seriously addressed in the literature. Existing standards, such as IEEE 802.11, HIPERLAN, and bluetooth, all assume that the network is fully connected or there is a clock synchronization mechanism. Extensive simulation results are presented to verify the effectiveness of the proposed protocols. (C) 2003 Elsevier B.V. All rights reserved.Item type:Item, Scattering and guiding characteristics of waveguides with two-dimensionally periodic walls of finite thickness(2003-10-23) ;Hwang, RB ;Peng, ST ;友訊交大聯合研發中心D Link NCTU Joint Res Ctr[1] Electromagnetic wave propagation along waveguides having two-dimensionally (2-D) periodic walls with finite thickness is formulated here as an exact boundary-value problem. The dispersion relation of such a class of waveguide is systematically analyzed in terms of both phase and attenuation constants. In addition, the contour map of field components and Poynting vector are also demonstrated in this paper to verify the guiding characteristics of such a class of waveguides. In particular, the strong couplings between an incident plane wave and waveguide modes phase-matching condition are carefully examined and are employed to identify the existence of waveguide modes.Item type:Item, Growth rate regulation of lac operon expression in Escherichia coli is cyclic AMP dependent(2003-10-23) ;Kuo, JT ;Chang, YJ ;Tseng, CP ;生物科技學系Department of Biological Science and TechnologyIn contrast to the ribosomal RNA gene expression increasing with growth rate, transcription of the lac operon is downregulated by cell growth rate. In continuous culture, growth rate regulation of lac promoter was independent of carbon substrate used and its location on the chromosome. Since the lac operon is activated by cyclic adenosine monophosphate (cAMP), which decreases with increasing cell growth rate, expression of plac-lacZ reporter fusion was analyzed in cya mutant under various growth conditions. The results demonstrated that expression of plac-lacZ in cya mutant was both lower and growth rate independent. In addition, ppGpp (guanosine tetraphosphate) was not involved in the mechanism of growth rate regulation of the lac promoter. Thus, the results of this study indicate that cAMP mediates the growth rate-dependent regulation of lac operon expression in Escherichia coli. (C) 2003 Published by Elsevier B.V. on behalf of the Federation of European Biochemical Societies.Item type:Item, Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN(x) interlayer in n-GaN layers(2003-10-27) ;Tu, RC ;Chuo, CC ;Pan, SM ;Fan, YMTsai, CENear-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiN(x) interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiN(x) interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiN(x) interlayer is expected because of the increased intensity of light scattered on the SiN(x) nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiN(x) interlayer doubles that without a SiN(x) interlayer. (C) 2003 American Institute of Physics.Item type:Item, Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers(2003-10-27) ;Tu, RC ;Chuo, CC ;Pan, SM ;Fan, YMTsai, CENear-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiNx interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiNx interlayer is expected because of the increased intensity of light scattered on the SiNx nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiNx interlayer doubles that without a SiNx interlayer. (C) 2003 American Institute of Physics.Item type:Item, Activation of the calcineurin-nuclear factor of activated T-cell signal transduction pathway in atrial fibrillation(2003-10-28) ;Lai, LP ;Lin, CC ;Lin, JL ;Lin, CS生物科技學系Item type:Item, Planar mode converter used in printed microwave integrated circuits(2003-10-28) ;Tzuang ;Ching-kuang ;LeeCheng-jungA planar mode converter includes a rectangular waveguide, a microstrip feed-in circuit, and a microstrip feed-out circuit. The rectangular waveguide is filled with dielectric layers and surrounded with metal materials. The lowermost dielectric layer has usually largest thickness and dielectric constant. Except for the lowermost dielectric layer, each of the dielectric layers has a rectangular aperture at its front-end and back-end, respectively. The microstrip feed-in circuit is constituted by first, second and third metal strips, and a feed-in metal ground plane. The first metal strip and the feed-in metal ground plane form a feed-in signal line. The first, second and third metal strips are adhered to the top surface of the lowermost dielectric layer, and the feed-in metal ground plane is adhered to the bottom surface of the lowermost dielectric layer. The microstrip feed-out circuit is constituted of fourth, fifth and sixth metal strips, and a feed-out metal ground plane. The sixth metal strip and the feed-out metal strip form a feed-out signal line.Item type:Item, Evolution of the yeast protein interaction network(2003-10-28) ;Qin, H ;Lu, HHS ;Wu, WB ;Li, WH統計學研究所To study the evolution of the yeast protein interaction network, we first classified yeast proteins by their evolutionary histories into isotemporal categories, then analyzed the interaction tendencies within and between the categories, and finally reconstructed the main growth path. We found that two proteins tend to interact with each other if they are in the same or similar categories, but tended to avoid each other otherwise, and that network evolution mirrors the universal tree of life. These observations suggest synergistic selection during network evolution and provide insights into the hierarchical modularity of cellular networks.Item type:Item, The electrochemical behavior of tin-doped indium oxide during reduction in 0.3 M hydrochloric acid(2003-10-30) ;Huang, CA ;Li, KC ;Tu, GC ;Wang, WS材料科學與工程學系The electrochemical behavior of tin-doped indium oxide (ITO) on SiO2 in 0.3 M HCl was studied using voltammetric scanning method. The result showed that an obvious reduction current peak occurred during the first cathodic potential scanning. The reduction reaction became less active after annealing ITO at 500 C for 1 h. The result was attributed to the replenishment of oxygen-deficient site, which acts as current carrier, by the annealing treatment. Many spherical In-Sn particles with sizes about 100-500 nm were formed on the ITO surface adjacent to the grain boundary when the reduction current took place. The In-Sn particles initiated preferentially on the ITO surface near grain boundaries attending the dissolution of ITO grain boundary. In the scanning period, after completion of the reduction current peak, reduction of hydrogen ions occurred in more negative potential region. A schematic illustration for the formation mechanism of the In-Sn reduction particle was postulated based on the metallographical and electrochemical results in this work. (C) 2003 Elsevier Ltd. All rights reserved.Item type:Item, 金氧半場效電晶體之閘極結構(2003-11-01) ;崔秉鉞黃誌鋒本發明係提出一種新的合金系統,用以解決金氧半場效電晶體金屬閘極功函數的不適性,促使表面通道電晶體起始電壓係可有效降低,達到低工作電壓之要求,本合金系統以化學性質不活潑且熱穩定性極佳的鉑金屬(Pt)為主成分,加入不同比例之低功函數材料,例如:鉭(Ta)或鈦(Ti),以達成調整功函數之目的。合金閘的製作方法可以是同時濺鍍(co-sputter)或是同時蒸鍍(co-evaporation)的物理氣象沉積方式,依所需之成分調整鉑靶及低功函數金屬靶之沉積速率,以合成適當的鉑合金,亦可以使用事先合成之合金靶,以單純物理性濺鍍方式製作。Item type:Item, Characterizing trench-gate power metal-oxide-semiconductor field effect transistor with multi-layer dielectrics at the trench bottom(2003-11-01) ;Lin, MJ ;Liaw, CW ;Chang, FL ;Cheng, HC電子工程學系及電子研究所Power devices with a high switching speed and a low conduction resistance are crucially important in power conversion circuits. In this study, a trench-gate power metal-oxide-semiconductor field effect transistor (MOSFET) with a high-density cell design 20.6 Mcell/cm(2) was implemented for the first time using multilayer dielectrics with an oxide-nitride-oxide (ONO) structure at the bottom of the trench. The thick ONO dielectric layers at the bottom of the trench compensate for the increase in Miller capacitance per unit area as the cell density increases. The resulting device exhibits excellent characteristics of gate charge, switching power loss, gate oxide quality and practical process stability, superior to those of the conventional structure. An n-channel 25.8 V trench gate MOSFET with a specific on-resistance of 0.15 mOmegam(2), and R-ON x Q(GD) figure-of-merit 41 mOmega.nC is presented.Item type:Item, Special section on bioinformatics - Foreword(2003-11-01) ;Hwang, JK ;Kao, MY ;Sun, CT ;Hsu, WL生物科技學系Item type:Item, Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization(2003-11-01) ;Hsu, YC ;Shao, TL ;Yang, CJ ;Chen, C材料科學與工程學系This paper investigates the electromigration-induced failures of SnAg3.8Cu0.7 flip-chip solder joints. An under-bump metallization (UBM) of a Ti/Cr-Cu/Cu trilayer was deposited on the chip side, and a Cu/Ni(P)/Au pad was deposited on the BT board side. Electromigration damages were observed in the bumps under a current density of 2 x 10(4) A/cm(2) and 1 x 10(4) A/cm(2) at 100 degreesC and 150 degreesC. The failures were found to be at the cathode/chip side, and the current crowding effect played an important role in the failures. Copper atoms were found to move in the direction of the electron flow to form intermetallic compounds (IMCs) at the interface of solder and pad metallization as a result of current stressing.Item type:Item, Flame stabilization over a Tsuji burner by four-step chemical reaction(2003-11-01) ;Tsa, SS ;Chen, CH ;機械工程學系Department of Mechanical EngineeringThis investigation applies a four-step chemical kinetics mechanism to implement the original combustion model developed by Chen and Weng (Combustion Science and Technology, Vol. 73, pp. 427-446, 1990). Comparing the blowoff curve of Tsuji (Progress in Energy and Combustion Science, Vol. 8, p. 93, 1982) with that of Chen and Weng reveals that this study yields a much better prediction than that in the latter reference. Also, the data in this study has an excellent agreement with the measured data of Dreier et al. (Berichtc der Bunsen-Gesellschaft-Physical Chemistry, Vol. 90, pp. 1010-1015, 1986). The interested parameter is the in flow velocity U-in. As U-in increases, the envelope diffusion flame, wake flame, liftoff flame, and another wake flame appear in that order before complete extinction. The formal wake flame is transformed from the envelope diffusion flame and the other is from the liftoff flame. The existence of a liftoff flame is verified by a corresponding experimental observation (Tsa et al., 2003). The maximal liftoff height is 1.7 D when U-in is 1.05 m/s, and this height is maintained up to U-in=1.09 m/s. Then the height declines gradually as the in flow velocity increases, which is a process that can be regarded as flashback. No recirculation flow exists behind the cylindrical burner for these liftoff flames. A transition from liftoff to wake flame occurs between 1.13 to 1.15 m/s. The wake flame reappears at U-in=1.16 m/s. Finally, the flame is extinguished completely when U-in>2.12 m/s. The flame's lifting and dropping back is explained.Item type:Item, Fuzzy multiple criteria selection of government-sponsored frontier technology R&D projects(2003-11-01) ;Hsu, YG ;Tzeng, GH ;Shyu, JZ ;科技管理研究所Institute of Management of TechnologySelection of government-sponsored frontier R&D projects is made difficult by the coexistence of the conflicting participating parties, the availability of experts for new frontier technology review, and the ambiguity of new frontier technology. This paper presents a model that includes (1) using the analytical hierarchy process (AHP) method to integrate various expectations from different interest groups into evaluating objectives/criteria, (2) the group-decision method by technical experts based on the predetermined objectives/criteria, and (3) the fuzzy approach in scoring the subjective judgments of the experts. The results reveal that differences of weights toward each criterion exist among various groups. The government and academia care more about social benefits, the researchers are more concerned about intellectual properties, and the experts from industry emphasize the importance of feasibility. The method presented in this paper was applied at a national research institute in Taiwan. The results reveal that: (1) the approach can solve the disparity between the profound knowledge required for evaluation and the different expectation from various interest groups, (2) the fuzzy approach is suitable to frontier technology R&D project selection because of the vagueness of the nature of frontier technology and the difficulties in evaluating quantitatively and accurately.Item type:Item, Decision of double-talk and time-variant echo path for acoustic echo cancelation(2003-11-01) ;Jenq, JC ;Hsieh, SF ;電信工程研究所Institute of Communications EngineeringA new double-talk detection (DTD) method is proposed for acoustic echo cancelation (AEC) using the iterative maximal-length-correlation (IMLC) algorithm. Based on the assumption of uniformly distributed time-variant echo-path-change, we develop a simplified likelihood ratio test and plot the detection performance by a receiver operating characteristic. Computer simulation shows the proposed DTD method is effective in discriminating double-talk from time-variant echo-path-change.