Browsing by Issue Date, starting with "2004-11-15"

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Behavior and surface energies of polybenzoxazines formed by polymerization with argon, oxygen, and hydrogen plasmas
(2004-11-15)
Chen, JK
;
Lin, IK
;
Ko, FH
;
Huang, CF
;
Chen, KS
Polybenzoxazine (PBZZ) thin films can be fabricated by the plasma-polymerization technique with, as the energy source, plasmas of argon oxygen or hydrogen atoms and ions. When benzoxazine (BZZ) films are polymerized through the use of high-energy argon atoms, electronegative oxygen atoms, or excited hydrogen atoms, the PBZZ films that form possess different properties aid morphologies in their surfaces. High-energy argon atoms provide a thermodynamic factor to initiate the ring-opening polymerization of BZZ and result in the polymer surface having a grid-like structure. The ring-opening polymerization of the BZZ film that is initiated by cationic species such as oxygen atoms in plasma, is propagated around nodule structures to form the PBZZ. The excited hydrogen atom plasma initiates both polymerization and decomposition reactions simultaneously in the BZZ film and Results in the formation of a porous structure on the PBZZ surface. We evaluated the surface energies of the PBZZ films polymerized by the action of these three plasmas by measuring the contact angles of diiodomethane and water droplets. The surface roughness of the films range from 0.5 to 26 nm, depending on the type of carrier gas and the plasma-polymerization time. By estimating changes in thickness, we found that tie PBZZ film synthesized by the oxygen plasma-polymerization process undergoes the slowest rate of etching in CF(4) plasma. (C) 2004 Wiley Periodicals, Inc.
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
(2004-11-15)
Lai, F
;
Chang, YH
;
Hsueh, TH
;
Huang, HW
;
Laih, LH
We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements. (C) 2004 Elsevier B.V. All rights reserved.
Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films
(2004-11-15)
Lin, CC
;
Chen, SY
;
Cheng, SY
;
材料科學與工程學系
;
Department of Materials Science and Engineering
ZnO films were implanted with phosphorus in the range from 5 x 10(12) to 5 x 10(15) cm(-2). Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5 x 10(18) ions/cm(3)), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5 x 10(18) ions/cm(3)), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping. (C) 2004 Elsevier B.V. All rights reserved.
Electron inelastic mean free paths and surface excitation parameters for GaAs
(2004-11-15)
Kwei, CM
;
Li, YC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Surface excitation parameters and inelastic mean free paths of electrons are of importance in the analyses of surface sensitive electron spectroscopies. When probe electrons are near the surface of a solid or the interface of an overlayer system, electron inelastic mean free paths become depth-dependent. These mean free paths and surface excitation parameters were calculated for electrons crossing the surface of GaAs. Calculations were performed for both incident and outgoing electrons by the use of a dielectric response theory. Applications were made to estimate the elastic backscattering intensity of electrons at different emission angles using the Monte Carlo simulations. Good agreement was found between calculated results and experimental data on the ratio of the elastic reflection coefficient for a GaAs sample relative to a Ni reference. Such a ratio was used to determine the effective electron inelastic mean free paths in GaAs by employing the surface excitation parameter obtained from Monte Carlo simulations. (C) 2004 Elsevier B.V. All rights reserved.
Efficient white light emission in conjugated polymer homojunctions
(2004-11-15)
Ho, GK
;
Meng, HF
;
Lin, SC
;
Horng, SF
;
Hsu, CS
We study polymer light-emitting diodes with a homojunction, i.e., junction between two layers with the same host material. One layer is poly (9,9-dioctylfluorene-2,7-diyl) (PFO) host blended with a small amount of poly (2-methoxy-5 (2'-ethyl-hexyloxy)-1,4-phenylene vinylene), another layer is either pure PFO or PFO host blended with green-emitting polyfluorene copolymers. Such homojunction devices are solution processed and show efficient white light emission. The peak luminance 3000 cd/m(2) is reached at 10 V with Internationale de L'Eclairage (CIE) coordinate (0.34, 0.34). (C) 2004 American Institute of Physics.
Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films
(2004-11-15)
Li, ZQ
;
Lin, JJ
;
電子物理學系
;
物理研究所
;
Department of Electrophysics
We have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Gruneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent. (C) 2004 American Institute of Physics.
Efficient 1521-nm Nd : GdVO4 Raman laser
(2004-11-15)
Chen, YF
;
電子物理學系
;
Department of Electrophysics
An efficient compact diode-pumped actively Q-switched Nd:GdVO4 laser at 1521 nm is demonstrated by use of the nonlinear optical process of stimulated Raman scattering. With a 13.6-W diode pump power, greater than 1.18 W of 1521-nm average power at a repetition rate of 20 kHz is generated. At a repetition rate of 5 kHz, the pulse width is shorter than 5 ns and the peak power is higher than 20 kW. (C) 2004 Optical Society of America.
Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics
(2004-11-15)
Sun, CL
;
Chen, SY
;
Liao, CC
;
Chin, A
;
材料科學與工程學系
We have developed one-transistor ferroelectric memory using lead titanate (PTO) as a gate dielectric directly formed on Si without any buffer layer. The PTO/Si metal-oxide-semiconductor field-effect transistor memory has shown a large threshold voltage shift of 1.6 V at only +/-4 V program/erase voltages. The corresponding good interface was achieved by lowering the anneal temperature to 450 degreesC. Besides the sharp capacitance change of 0.17 muF/V cm(2), it was also evidenced by the high mobility of 169 cm(2)/V s close to high-kappa HfO2. In addition, long retention >1000 s and endurance >10(11) stress cycles in the device suggested good memory characteristics. (C) 2004 American Institute of Physics.
Interfacial microstructure and electrical properties of PT/Al2O3/Si annealed at high temperatures
(2004-11-15)
Chen, SY
;
Hsiao, CS
;
Hsu, JJ
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Pb1+xTiO3 (PT) thin films were deposited on Al2O3(10 nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600 degreesC and excellent memory properties are obtained. However, with increasing annealing temperature above 700 degreesC, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al2O3/Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al2O3/Si. (C) 2004 Elsevier B.V. All rights reserved.
White organic light-emitting diodes based on 2,7-bis(2,2-diphenylvinyl)-9,9 '-spirobifluorene: Improvement in operational lifetime
(2004-11-15)
Chuen, CH
;
Tao, YT
;
Wu, FI
;
Shu, CF
;
應用化學系
Very bright white organic light-emitting diodes were fabricated using 2,7-bis(2,2-diphenylvinyl)-9,9(')-spirobifluorene (DPVSBF) doped with [4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran)] (DCJTB) as the emission layer. With a device configuration of ITO/NPB(40 nm)/DPVSBF:0.2%DCJTB(11 nm)/Alq(30 nm)/LiF(1 nm)/Al(150 nm), a brightness of 1575 cd/m(2) with an external quantum efficiency of 3.31% and luminous efficiency of 8.00 cd/A, a power efficiency of 5.35 lm/W was achieved at a driving current of 20 mA/cm(2) (4.7 V). The brightness reached 66 000 cd/m(2) at 15 V. The Commission Internationale de l'Eclairage coordinates stayed nearly constant, changed from (0.35, 0.36) to (0.32, 0.34) when the voltage increased from 6 to 12 V. The relative operational lifetime of the device increased by a factor of similar to20 compared with a similar device based on 4,4(')-bis-(2,2-diphenylvinyl)-1,1(')-biphenyl as the source of the blue emission. The much extended half-lifetime was attributed to the higher morphological stability of the DPVSBF. (C) 2004 American Institute of Physics.
施工公告
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
本校「致和新村二期景觀工程」於即日起開始施工，預定十二月二日前完成，請注意安全並有任何問題請電本校營繕組，施工期間造成不便，請多多包涵。
工研院國防訓儲徵才說明會
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
時間：93年11月19日（五）10：00 ~ 12：00 地點：學生活動中心第一會議室活動行程： 10：00- 10：10 致詞 10：10- 10：40 工研院概況介紹與徵才作業介紹 10：40- 12：00 前瞻技術研發經驗分享（生醫領域）
九十三學年度第一學期醫學系網路教學評鑑
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
教師教學意見調查活動時間：93/10/4 至 94/1/19 活動對象：醫學系一至五年級同學問卷放置處：「校務行政系統」→「教學評鑑」→「教師教學意見調查」
利用熱回流光阻技術製造奈米級閘極於半導體裝置中之方法
(2004-11-16)
張翼
;
李晃銘
本發明有關一種利用熱回流光阻技術製造奈米級閘極於半導體裝置中之方法，包含下列步驟(i)利用一光阻塗佈機依序旋塗兩層光阻於一基板之上，其中該兩層光阻之一底層光阻係對電子束比較不敏感但解析度較高之一高分子光阻，及該兩層光阻之一頂層光阻係對電子束比較敏感但解析度較低之另一高分子光阻；(ii)藉一熱盤來加熱該兩層光阻，使該兩層光阻硬化；(iii)藉一高加速電壓之電子束微影技術，以直寫方式在該兩層光阻上曝射出形成閘極之光阻圖案；(iv)利用顯影劑及蝕刻劑顯影及蝕刻出該閘極之凹洞；(v)以電子槍蒸鍍技術在該閘極凹洞處鍍上一層金屬層；以及(vi)去除該等光阻以形成閘極，其特徵在於蝕刻出該閘極之凹洞後，以熱盤加熱方式回流該等光阻，透過適當的加熱時間及溫度，使該閘極之凹洞形成所需之奈米級寬度。
時域反射圓錐貫入器
(2004-11-16)
林志平
;
周家榮
;
湯士弘
一種時域反射圓錐貫入器，可與圓錐貫入試驗裝置結合且可接收來自一時域反射儀所發出之電磁波，該時域反射圓錐貫入器包括：一貫入件，可與該圓錐貫入試驗裝置結合；一傳輸接頭，固設於該貫入件內部，其一端具有正負極導體，另一端可結合並傳輸來自時域反射儀之電磁波；以及複數傳輸導體，固接於該貫入件外側，且分別導通至該傳輸接頭之正負極導體，用以傳輸該電磁波以形成電磁場於貫入件周遭。
九十三學年度第一學期臨時校務會議
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
時間：九十三年十一月三日 (星期三) 上午九時地點：本校會議中心表演廳
第二屆陽明盃攝影比賽
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
攝影主題：以傳達愛在校園為題，凡台灣聯大校區內人文、活動、景觀等。主辦單位：台灣聯合大學系統承辦單位：國立陽明大學通識中心協辦單位：陽明大學攝影社徵稿期間：93年11月5日(五)起至93年11月22日(一) 下午5點截止。
承先啟後．吳校長順利連任本校第五任校長
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
本校過去三年間，在吳校長之率領下，積極推動校內各項校務工作，不論是在教務、學務、總務及校際推展方面，皆有大幅之成長與收獲。為賡續其治校理念，校長擬連任第五任校長
Method of enhancing spatial resolution for distributed temperature measurement
(2004-11-16)
Chi
;
Sien
;
Lee
;
Chien-Chung
;
Chiang
A method that utilizes a short sampling interval and a long-pulsewidth laser source to obtain the long sensing range and employs a signal processing technique of decomposing Brillouin spectrum to achieve high spatial resolution, high temperature resolution of the distributed temperature measurement is disclosed. The present method includes the steps of measuring the Brillouin spectra of an optical pulse applying to a sensing fiber and a overlapped area thereof, determining the length that the pulse enters according to the measured Brillouin spectra and a weighting factor and then determining a real Brillouin spectrum profile and a temperature distribution according to Brillouin frequency shifts thereof. For a 9500-m sensing range of standard single-mode fiber and a 100-ns pulsewidth laser source, spatial and positon resolutions of 20 cm and a temperature resolution of 1.degree. C. are simultaneously achieved by using this signal processing method.
日本國立長崎大學一行蒞校拜會及參訪
(國立陽明大學, 2004-11-16)
陽明電子報編輯小組
時間：民國九十三年十一月九日（星期二）