Browsing by Issue Date, starting with "2004-11-17"

Now showing 1 - 20 of 69139

Low temperature electrical transport properties of RuO2 and IrO2 single crystals
(2004-11-17)
Lin, JJ
;
Huang, SM
;
Lin, YH
;
Lee, TC
;
Liu, H
We have systematically measured the electrical transport properties of several RuO2 and IrO2 single crystals over a wide temperature range from 300 K down to 0.3 K to study the conduction mechanisms in these oxides. Our measured resistivities are in close agreement with the recent band-theory calculations for these materials. The characteristic temperatures for the acoustic-mode and optical-mode phonons are determined. Our measured magnetoresistances are positive and follow the Kohler rule, indicating that the transport properties of these oxides exhibit normal behaviour as described by the Boltzmann equation. In contrast, we do not find any signature of superconductivity down to 0.3 K, though the band-theory calculations predict a superconducting transition temperature of similar to5 K. Magnetization measurements suggest a very low level of paramagnetic impurities in our crystals.
Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology
(2004-11-18)
Edward, Chang
;
Huang-Ming, Lee
The invention relates to a method for fabricating nanometer gate semiconductor device using thermally reflowed photoresist technology, comprising steps of (i) spin-coating two layers of photoresists on a substrate, where a bottom layer of photoresist is a polymeric photoresist having a lower sensitivity and a higher resolution, and a top layer of photoresist, is another polymeric photoresist having a higher sensitivity and a lower resolution, with respect to the electron beam; (ii) heating the photoresists for curing by way of using a hotplate; (iii) using photolithography in an electron beam direct writing manner to expose a pattern on the photoresists for forming a gate; (iv) using a developer and an etchant for developing and etching to form a recess on the gate; (v) plating a metallic layer on the recess of the gate using an electron gun evaporation technique; and (vi) removing the photoresists to obtain the gate, characterized in that after the etching of the recess of the gate, the photoresists are reflowed by using a hot plate heating manner within a predetermined period of time and temperature, such that the recess of the gate is formed with a nanometer-sized width.
野宴,歡慶文學豐收-「人間」邀請您
(2004-11-19)
李慧琳
野宴
(2004-11-20)
韓良露
光纖光柵感應地層移動監測管及包含有此光纖光柵感應地層移動監測管的監測系統
(2004-11-21)
黃安斌
;
簡旭君
本發明提拱一種用於感應地層移動之監測系統，包括有：一光纖光柵感應地層移動監測管，係埋入在地層下，且具有一管狀物以及具有複數點光柵之複數光纖；一解析器，其係設置在地表面上，且藉由一光纖而連接至該光纖光柵感應地層移動監測管；以及一電腦，其係設置在地表面上，且藉由一電線而連接至該解析器，其中該等光纖的複數點光柵會根據地層移動來反應出該等光柵所產生之反射光波長變化至該解析器；該解析器會提供該光纖光柵感應地層移動監測管所需之光源，並反應該光纖光柵所產生之反射光波長的變化，最後把該光纖光柵所產生之反射光波長的變化透過該電線傳送至該電腦中；以及該電腦會把來自該解析器中反射光波長的變化分析，以獲得地層移動之大小。
有機電激發光高分子化合物
(2004-11-21)
許千樹
;
黎安國
;
謝炳榮
;
李興銓
本發明係揭露一種以聚芳香烴乙烯(PPV)為主體之有機電激發光高分子，可解決習知因高分子溶解度不佳，造成加工製程上的不便，本發明係導入不同之烷氧類及環烷類或其基團，不僅可增加其高分子的溶解度，且因其所合成之聚芳香烴乙烯本身周圍的取代基團立體阻礙小，可聚合出具較高分子量之化合物，並具有足夠的成膜性以及高固態螢光量子效率，對於有機電激發光元件之應用上具有更高的實用價值。
靜電放電防護電路
(2004-11-21)
柯明道
;
林昆賢
本發明係一種靜電放電防護電路，其應用在具有省電模式功能之積體電路上，當應用本發明之積體電路進入省電模式時，本發明可防止漏電流的產生，並可防止正電壓由輸入或輸出銲墊向VDD電源線充電，以避免積體電路產生運作錯誤之問題，且本發明之VDD電源線至VSS電源線間以及ESD匯流線至VSS電源線間，分別設有一ESD箝制電路，藉此達到全積體電路靜電防護之目的。本發明能防止習知靜電放電防護電路於省電模式時，所產生之漏電流或電路錯誤運作等問題，並能同時達到全晶片靜電防護之效果。
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
(2004-11-22)
Wang, YW
;
Cheng, HL
;
Wang, YK
;
Hu, TH
;
Ho, JC
This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport. (C) 2004 Elsevier B.V. All rights reserved.
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
(2004-11-22)
Chang, TC
;
Yan, ST
;
Liu, PT
;
Lin, ZW
;
Aoki, H
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
(2004-11-22)
Wu, JW
;
You, JW
;
Ma, HC
;
Cheng, CC
;
Chang, CS
Low frequency flicker noise in n-type metal-oxide-semiconductor field effect transistors (n-MOSFETs) with 15 Angstrom gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model. (C) 2004 American Institute of Physics.
Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers
(2004-11-22)
Liu, PC
;
Lu, CL
;
Wu, YCS
;
Cheng, JH
;
Ouyang, H
The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 degreesC. When temperatures increased above 400 degreesC, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 degreesC. (C) 2004 American Institute of Physics.
Thermal and microwave assisted reactions of 2,5-disubstituted thienosultines with [60]fullerene: non-Kekule biradicals and self-sensitized oxygenation of the cycloadduct
(2004-11-22)
Chi, CC
;
Pai, IF
;
Chung, WS
;
應用化學系
;
Department of Applied Chemistry
Refluxing an o-dichlorobenzene solution of 2,5-disubstituted thienosultines 10a-f with [60]fullerene for 2-24 h gave both 1:1 and 2:1 cycloadducts in 37-79% isolated yields. The reaction was highly accelerated by microwave irradiation giving comparable yields of cycloadducts. Sultines 10a-f underwent cheletropic extrusion of SO2 to form the corresponding non-Kekule biradical intermediates 11a-f, which were subsequently trapped by [60]fullerene to form corresponding cycloadducts. The activation energy barriers (DeltaG(c)(not equal)) determined for the boat-to-boat inversion of these 4',5',6',7'-tetrahydrobenzo[c]thieno-[5',6':1,2][60]fullerene adducts 12a-f were found to be in the range of 13.5-14.8 kcal/mol. Unexpectedly, one of the monoadduct 12a was found to be labile when kept in air under ambient light. Two new products 15 (a sulfine-enone) and 16 (an endione) were isolated from the decomposed 12a and were found to derive from self-sensitized singlet oxygen reaction on the 2,5-dimethylthieno moiety of 12a. (C) 2004 Elsevier Ltd. All rights reserved.
Probing the microwave degradation mechanism of phenol-containing polymeric compounds by sample pretreatment and GC-MS analysis
(2004-11-22)
Chang, YC
;
Ko, FH
;
Ko, CJ
;
Chu, TC
;
材料科學與工程學系奈米科技碩博班
We have detected the volatile organic species obtained after microwave digestion of poly(hydroxystyrene) with nitric acid in closed vessels at various reaction temperatures by using headspace solid-phase microextraction (HS-SPME) and gas chromatography/mass spectrometry (GC-MS). We probed the digestion reaction by measuring the response of the detectable species - we detected a total of 20 volatile organic compounds - with respect to the temperature over the range from room temperature to 80 degreesC. These compounds can be classified into alkane, alkanol, and aromatic species. The alkane species decreased monotonically, whereas the alkanol and aromatic compounds first increased and then decreased, as the digestion temperature increased. We have established the degradation mechanisms, which involve bond scission, recombination, adduct formation, and ring opening, on the basis of product analyses and bond length simulations. (C) 2004 Elsevier B.V. All rights reserved.
好一場文學野宴(上)
(2004-11-23)
孫瑋芒
好一場文學野宴(下)
(2004-11-24)
廖玉蕙
Direct generation of optical bottle beams from a tightly focused end-pumped solid-state laser
(2004-11-29)
Tai, PT
;
Hsieh, WF
;
Chen, CH
;
光電工程學系
;
Department of Photonics
We demonstrate that various optical bottle beams can be directly generated from a tightly focused end-pumped Nd:YVO4 laser. By controlling the size of pump beam and intracavity aperture in a planoconcave cavity, we obtain well contrasting optical bottles with semiconfocal, 1/3-, and 1/5-degenerate cavity configurations. These beams result, respectively, from the superposition of the fundamental mode and the corresponding lowest degenerate transverse eigenmode, which is in-phase at their beam waists. Unlike that of our previous simulation model, this new observation is universal; it is suitable for any kind of gain media in tightly end-pumped lasers. (C) 2004 Optical Society of America.
Simulation of lid-driven cavity flows by parallel lattice Boltzmann method using multi-relaxation-time scheme
(2004-11-30)
Wu, JS
;
Shao, YL
;
機械工程學系
;
Department of Mechanical Engineering
Two-dimensional near-incompressible steady lid-driven cavity flows (Re= 100-7,500) are Simulated using multi-relaxation-time (MRT) model in the parallel lattice Boltzmann BGK Bhatnager-GrossKrook method (LBGK). Results are compared with those using single-relaxation-time (SRT) model in the LBGK method and previous simulation data using Navier-Stokes equations for the same flow conditions. Effects of variation of relaxation parameters in the MRT model, effects of number of the lattice points, improved computational convergence and reduced spatial oscillations of solution near Geometrically singular points in the flow field using LBGK method due to MRT model are highlighted in the study. In summary, lattice Boltzmann method using MRT model introduces much less spatial oscillations near geometrical singular points, which is important for the successful simulation of higher Reynolds number flows. Copyright (C) 2004 John Wiley Sons, Ltd.
低溫多晶矽薄膜電晶體主動層之雷射再結晶方法
(2004-12-01)
葉清發
;
陳添富
;
羅正忠
本發明係一種低溫多晶矽薄膜電晶體主動層之雷射再結晶方法，其係利用具單一方向性之乾式蝕刻在薄膜電晶體主動層側壁覆蓋一間距矽(poly–spacer)，該間距矽(poly–spacer)提供了一雷射側向再結晶機制與可防止雷射再結晶後主動層微縮或剝落現象，可使通道內之矽晶粒變大但不需額外光罩，如此同時提升元件特性、提高元件均勻度與節省製程成本，此技術在現今低溫多晶矽薄膜電晶體(LTPS–TFTs)領域中將會是一項關鍵技術。
An optimal interpolated FIR echo canceller for digital subscriber lines
(2004-12-01)
Lin, SS
;
Wu, WR
;
電信工程研究所
;
Institute of Communications Engineering
An adaptive interpolated FIR (IFIR) echo canceller was recently proposed for xDSL applications. This canceller consists of an FIR filter, an IFIR filter, and a tap-weight overlapping and nulling scheme. The FIR filter is used to cancel the short and rapidly changing head echo while the IFIR filter is used to cancel the long and slowly decaying tail echo. This echo canceller, which inherits the stable characteristics of the conventional FIR filter, requires low computational complexity. It is well known that the interpolation filter for an IFIR filter has great influence on the interpolated result. In this paper, a least-squares method is proposed to obtain optimal interpolation filters such that the performance of the IFIR echo canceller can be further improved. Simulations with a wide variety of loop topologies show that the optimal IFIR echo canceller can effectively cancel the echo up to 73.0 dB (for an SHDSL system). About 57% complexity reduction can be achieved compared to a conventional FIR filter.
Diagnosability of t-connected networks and product networks under the comparison diagnosis model
(2004-12-01)
Chang, CP
;
Lai, PL
;
Tan, JJM
;
Hsu, LH
;
資訊工程學系
Diagnosability is an important factor in measuring the reliability of an interconnection network, while the (node) connectivity is used to measure the fault tolerance of an interconnection network. We observe that there is a close relationship between the connectivity and the diagnosability. According to our results, a t-regular and t-connected network with at least 2t + 3 nodes is t-diagnosable. Furthermore, the diagnosability of the product networks is also investigated in this work. The product networks, including hypercube, mesh, and tori, comprise very important classes of interconnection networks. Herein, different combinations of t-diagnosable and t-connected are employed to study the diagnosability of the product networks.