Browsing by Issue Date, starting with "2004-12-22"

Now showing 1 - 20 of 68988

High-density MIM capacitors with HfO(2) dielectrics
(2004-12-22)
Perng, TH
;
Chien, CH
;
Chen, CW
;
Lehnen, P
;
Chang, CY
Metal-insulator-metal (MIM) capacitors with high-k HfO(2) dielectrics were fabricated and investigated. Experimental results show low leakage current densities of similar to5 x 10(-9) A/cm(2) and high capacitance density of similar to3.4 fF/mum(2) at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO(2) MIM capacitors to be Poole-Frenkel-type conduction mechanism. (C) 2004 Elsevier B.V. All rights reserved.
Growth of chromium carbide capped-carbon nanotip using bias-assisted microwave plasma chemical vapor deposition
(2004-12-22)
Hsu, CH
;
Shi, SC
;
Chen, CF
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Chromium carbide capped-carbon nanotips were synthesized using bias-assisted microwave plasma chemical vapor deposition. Such a material grew up to several hundreds of nanometer long and tens of nanometer in diameter. The applied bias voltage is a significant parameter in the growth process whereas the higher bias voltage is effective in increasing the growth rate. However, the higher bias voltage also contributes to a rapid formation of chromium carbide which leads to a shorter length of carbon nanotip at the same time. Higher ion energies also vary the tip diameter due to strong ion bombardment which is a competitor to the deposition process. Our investigations revealed that the growth of chromium carbide capped-carbon nanotips reaches a limit due to the full carburization of chromium. (C) 2004 Elsevier B.V. All rights reserved.
Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
(2004-12-22)
Chang, TC
;
Tsai, TM
;
Liu, PT
;
Chen, CW
;
Tseng, TY
The effect of electron beam (e-beam) curing on an ultra low dielectric constant material, porous organosilicate glass (OSG) is investigated. In conventional IC integration processes, photoresist (P. R.) stripping with O-2 plasma and wet chemical stripper is an inevitable step. However, dielectric degradation often occurs when low-k dielectrics undergo the PR stripping processing. This limits the application of incorporating low-k material into semiconductor fabrication. In order to overcome the integration issue, e-beam direct curing process was proposed in this study. In this technology, the dielectric regions irradiated by e-beam will be cross-linked, forming the desired patterns. Meanwhile, the regions without e-beam illumination are dissolvable in a mingled solvent of 2.38 wt.% tetra-methyl ammonium hydroxide (TMAH) and methanol with the ratio of 1:8. In this work, the possible doses of e-beam exposed porous OSG are decided by Fourier transform infrared spectroscopy, n&k 1200 analyzer and electrical analyses. The experimental results expressed that the minimum dosage to cure porous OSG film is 6 muC/cm(2), which is similar to commercial e-beam resist. Additionally, a scanning electron microscope +/-S.E.M.) image of homemade pattern was made to estimate the process practicability. (C) 2004 Elsevier B.V. All rights reserved.
Study on etching profile of nanoporous silica
(2004-12-22)
Chen, CW
;
Chang, TC
;
Liu, PT
;
Tsai, TM
;
Wu, HH
We have investigated the impact of Hz-plasma treatment on porous organosilicate glass (POSG) with etching process. The etching rate of trenches of nanoporous silica film was about 650 nm/min using fluorocarbon plasma. It is 1.6 times the etching rate of CVD oxide for the same etching condition due to the high porosity of POSG. We found that the profile of the intrinsic sample had mask undercutting. By the contrary, the mask undercutting effect was suppressed in the H-2,-plasma-treated sample. Based on the FTIR spectra analysis, the Si-H bonding was appeared after H-2-plasma treatment. The existence of Si-H bonds enhances to possess high C/F ratio and high polymerization rate at the sidewall surface. As a result, the spontaneous reactive etching at sidewall was suppressed. We also observed the pattern profile of porous silica was distorted after O-2-plasma ashing. This is due to the oxidation of hydrophobic groups and the formation of Si-OH bonds in the bulk. The interaction between the siloxanol groups and the gelation reaction occurred in the internal of porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. (C) 2004 Published by Elsevier B.V.
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
(2004-12-22)
Cheng, YL
;
Wang, Y
;
Lan, JK
;
Chen, HC
;
Lin, JH
For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low-k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low-k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low-k film is slightly sacrificed due to the decrease of micropores in the deposited films. (C) 2004 Elsevier B.V. All rights reserved.
Cu-penetration induced breakdown mechanism for a-SiCN
(2004-12-22)
Chen, CW
;
Liu, PT
;
Chang, TC
;
Yang, JH
;
Tsai, TM
We have investigated the leakage mechanism of amorphous SiCN (a-SiCN) films after bias-temperature-stress (BTS) with Cu electrode. The leakage current became very large and breakdown due to the Cu ions penetration after strict BTS condition. The distribution profile of Cu penetration was depicted by SIMS spectrum. It is apparent that Cu ions penetrated into the a-SiCN film and even reached to the interface between a-SiCN/Si due to BTS. The Cu ions existing in a-SiCN would be taken as trap states and could enhance the carriers to transport. The main characteristics of post-breakdown a-SiCN followed the space-charge-limited current (SCLC) mechanism at 298 K. With decreasing the temperature to 100 K, the Fowler-Nordheim tunneling dominated the conduction in medium fields. However, electrons obeyed the SCLC again in high fields (>3.3 MV/cm) at 100 K. We purpose a physical model to interpret the leakage mechanism of breakdown a-SiCN films due to Cu ions. (C) 2004 Elsevier B.V. All rights reserved.
Isomers of OCS2: IR absorption spectra of OSCS and O(CS2) in solid ar
(2004-12-22)
Lo, WJ
;
Chen, HF
;
Chou, PH
;
Lee, YP
;
應用化學系
Irradiation of an Ar matrix sample containing O-3 and CS2 with a KrF excimer laser at 248 nm yielded new lines at 1402.1 (1404.7), 1056.2 (1052.7), and 622.3 (620.5) cm-1; numbers in parentheses correspond to species in a minor matrix site. Secondary photolysis at 308 nm diminished these lines and produced mainly OCS and SO2. Annealing of this matrix to 30 K yielded a second set of new lines at 1824.7 and 617.8 cm-1. The first set of lines are assigned to C=S stretching, O-S stretching, and S-C stretching modes of carbon disulfide S-oxide, OSCS; and the second set of lines are assigned to C=O stretching and OCS bending modes of dithiiranone, O(CS2), respectively, based on results of S-34- and O-18-isotopic experiments and quantum-chemical calculations. These calculations using density-functional theory (B3LYP/aug-cc-pVTZ) predict four stable isomers of OCS2: O(CS2), SSCO, OSCS, and SOCS, listed in order of increasing energy. According to calculations, O(CS2) has a cyclic CS2 moiety and is the most stable isomer of OCS2. OSCS is planar, with bond angles angleOSCcongruent to111.9degrees and angleSCScongruent to177.3degrees; it is less stable than SSCO and O(CS2) by similar to102 and 154 kJ mol-1, respectively, and more stable than SOCS by similar to26 kJ mol-1. Calculated vibrational wave numbers, IR intensities, S-34- and O-18-isotopic shifts for OSCS and O(CS2) fit satisfactorily with experimental results. (C) 2004 American Institute of Physics.
Algorithm for a memory-based Viterbi decoder
(2004-12-23)
Chen-Yi, Lee
;
Chien-Ching, Lin
;
Chia-Cho, Wu
An algorithm for a memory-based Viterbi decoder is disclosed in the invention, which employs the property of a trace-back path; that is, the similarity between two consecutive trace-back paths becomes higher as the data error rate goes down. Therefore, the algorithm of the invention is to save the previous trace-back path into a register, and as soon as the current trace-back path is found to be the same as the previous one, the demanded path is obtained. After that, the memory read operations will stop, and thus the power consumption made by the memory read operations would be largely reduced. Besides, before the path trace-back, the path prediction can be executed by utilizing the property that the minimum path metric and the path are consecutive. In conclusion, the invention is capable of reducing the number of memory access operations and the power consumption by employing the mechanisms of path matching and path prediction.
等大腳印
(2004-12-23)
管管
只剩下雪了
(2004-12-26)
管管
Improved N-port optical quasi-circulator by using a pair of orthogonal holographic spatial- and polarization-modules
(2004-12-27)
Chen, JH
;
Hsieh, PJ
;
Lin, JY
;
Su, DC
;
光電工程學系
Based on the flexibilities of light beam propagation in three dimensions, we propose an improved N-port optical quasi-circulator by using a pair of orthogonal holographic spatial- and polarization- modules. All optical elements are located in parallel planes that are perpendicular to the optical axis. The number of optical elements is decreased, and a higher performance optical quasi-circulator without crosstalk and polarization mode dispersion can be easily achieved. A prototype of 5-port polarization-independent optical quasi-circulator operating at a wavelength of 1300 nm was assembled and tested to show its validities. (C) 2004 Optical Society of America.
Single-longitudinal-mode semiconductor laser with digital and mode-hop-free fine-tuning mechanisms
(2004-12-27)
Shih, TS
;
Lan, YP
;
Lin, YF
;
Pan, RP
;
Pan, CL
We report a novel external cavity laser diode (lambda = 1.5 mum). An intra-cavity liquid crystal pixel mirror allows digitally tuning of the laser wavelength to more than 40 wavelength channels of 100 GHz spacing according to the International Telecommunication Union (ITU) grid. Laser wavelength can further be fine-tuned by varying the driving voltages applied to an intra-cavity planar nematic liquid crystal phase plate. With a cell 52.3 mum in thickness, the output frequency can be continuously tuned over 1.89 GHz. The root-mean-square voltage required for driving the phase plate was from 1.00 to 4.56 volts. (C) 2004 Optical Society of America.
Structure of metal oxide semiconductor field effect transistor
(2004-12-28)
Tsui
;
Bing-Yue
;
Huang
;
Chih-Feng
The present invention provides a structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), which comprises a SOI (Silicon-On-Insulator) device, a MOS (Metal Oxide Semiconductor) formed on said SOI device, and a metal-silicide layer. Said SOI device includes a substrate, an insulation layer formed on said substrate, and a silicon layer formed on said insulation layer, and the MOS is formed on said SOI device. The metal-silicide layer is formed in accordance with a metal aligned process by a metal layer being deposited on said SOI device and on said MOS for reacting with said silicon layer, and an implant-to-silicide process is employed to form a high-density source region and a high-density drain region for modifying Schottky Barrier and diminishing Carrier Injection Resistance.
Method for fabrication of polycrystalline silicon thin film transistors
(2004-12-30)
Ching-Fa, Yeh
;
Tien-Fu, Chen
;
Jen-Chung, Lou
The present invention provides a method for fabrication of polycrystalline silicon thin film transistors, which forms a silicon spacer on the sidewall of the active layer of a thin film transistor (TFT) by way of anisotropic plasma etching in a single direction. The silicon spacer provides a mechanism for laser recrystallization on the sidewall to prevent the active layer from shrinkage or shelling-off after the laser recrystallization. According to the present invention, large grains can be formed in the channel without additional mask during production. By doing so, the characteristics of the components are enhanced; the uniformity is improved; and, the production cost is lowered. Therefore, this technique will play an important role in the fields of low temperature polycrystalline silicon thin film transistor (LTPS-TFT).
恭賀徐明達老師著作獲選為2004開卷十大好書
(國立陽明大學, 2004-12-31)
陽明電子報編輯小組
根據開卷十大好書的評選原則與標準，遴選出來的好書須具有「相當的可讀性，可讓讀者親近、提升視野，並據以享受閱讀的樂趣」。徐老師靈活運用充滿創意趣味的插圖及通俗生動的文字瞄述，將原應屬於學術經典及艱深專業的書籍，演繹為值得推薦給一般讀者大眾閱讀的書
徵稿公告
(國立陽明大學, 2004-12-31)
陽明電子報編輯小組
＜教學服務組代轉訊息＞四所學校公開徵稿，詳情請點入徵稿公告查詢
尖端中心陽明分部演講公告
(國立陽明大學, 2004-12-31)
陽明電子報編輯小組
時間：94年1月7日(星期五)13:30-15:30 地點：陽明大學實驗大樓四樓生命科學系會議室講者：許健平教授(中央大學電子計算機中心主任) 講題：智慧型無線感測網路之設計與應用
好，還要更好‧潘逸萱在國際科學研討會中奪冠
(國立陽明大學, 2004-12-31)
陽明電子報編輯小組
「我想去參加這個會議是因為國內作同樣研究的人很少，幾乎可以說是沒有，我一個人埋著頭作，有時候難免感到寂寞和惶恐，因為無從得知自己到底作得如何？」逸萱當初是抱著會友、觀摩的心態踏出國門，沒想到不但因此結識許多研究同好，而且還證明了自己的實力
花花世界多美妙
(國立陽明大學, 2004-12-31)
錢玨琄
婉華學習插花已經有多年的歷史了，她的夢想是在退休前能存夠錢自己開一間小小的花店，怡情養性。身為同事的我們都非常支持她，不單是因為她有這個天分和實力，更重要的是她充滿了熱情，即使遇到生活中的挫折也能樂觀以對，這樣的特質反映在她的才藝上，往往化腐朽為神奇，變廢棄為美妙.....
校園之美
(國立陽明大學, 2004-12-31)
陽明電子報編輯小組
平時看似凌亂的宿舍前，也有他寧靜、安祥的時刻，只要用心，處處都可以成為美景..... AngelChen -- 2004/12