Browsing by Issue Date, starting with "2005-02-28"

Now showing 1 - 20 of 67154

Improved performance and stability of organic light-emitting devices with Al-Cu alloy cathode
(2005-02-28)
Chen, IC
;
Hwang, SW
;
Chen, CH
;
應用化學系
;
友訊交大聯合研發中心
We have developed a stable green organic electroluminescent (EL) device by using an Al-Cu alloy as a cathode, which has better performance and reliability than the device with an Al cathode. The device with an Al-Cu alloy cathode achieved an EL efficiency of 3.78 cd/A(2.18 lm/W) at 20 mA/cm(2) and the operating voltage was 5.46 V, while device with Al cathode had an EL efficiency of 3.1 cd/A(1.34 lm/W) and 7.3 V at the same drive condition. The Al-Cu device achieved a 20% decay lifetime (t(80)) of 1234 h at an initial brightness of 756 cd/m(2), which is twice the lifetime of conventional device with the state-of-the-art LiF/Al cathode. (C) 2005 American Institute of Physics.
Composition determination of semiconductor quantum wires by X-ray scattering
(2005-02-28)
Hsu, CH
;
Tang, MT
;
Lee, HY
;
Huang, CM
;
Liang, KS
Self-assembled semiconductor nano-structures, e.g. quantum dots and wires, have recently attracted intensive interests due to their potential applications in optoelectronic industry. Strain field, compositional profile, size, and shape are the key factors determining the physical properties of these nano-structures. However, due to their mesoscopic size, it is a challenge to accurately determine those geometric and chemical parameters. In this work, we present the structural and compositional investigation of GaAs quantum wires grown on InP(0 0 1) substrates by grazing incidence X-ray scattering. In particular, we applied resonant X-ray scattering to determine the compositional distribution within the wires. With properly chosen diffraction peak and X-ray energy range, the profile of energy scan is highly sensitive to the composition of the region with selected lattice constant. As compared to other composition determination methods, which rely on the intensity ratio either between a strong and a weak diffraction or between the same Bragg diffraction collected at different energies, the profile of energy scan is not affected by the significant intensity modulation introduced by inter-wire correlation. Therefore, this method can be applied to systems of various surface morphologies and ordered structures and still provides compositional information with high accuracy and good resolution. (C) 2004 Elsevier B.V. All rights reserved.
Variations of differential capacitance in SrBi2Ta2O9 ferroelectric films induced by photoperturbation
(2005-02-28)
Leu, CC
;
Chien, CH
;
Chen, CY
;
Chang, MN
;
Hsu, FY
In this letter, we demonstrated the impact of illumination on the differential capacitance variation of a strontium bismuth tantalite (SBT) capacitor during scanning capacitance microscopy measurements. It was found that illumination with a stray light of laser in an atomic force microscope could perturb the dC/dV signals of the samples. We attribute this phenomenon to the generation of free carriers by the photon absorptions via defect traps in the SBT thin film. Therefore, this present work suggests that the effect of laser illumination must be carefully taken into consideration whenever a field-sensitive technique is employed to analyze the properties of a ferroelectric material. (C) 2005 American Institute of Physics.
Ward identities and high energy scattering amplitudes in string theory
(2005-02-28)
Chan, CT
;
Ho, PM
;
Lee, JC
;
電子物理學系
;
Department of Electrophysics
High-energy limit alpha' --> infinity, of stringy Ward identities derived from the decoupling of two types of zero-norm states in the old covariant first quantized (OCFQ) spectrum of open bosonic string are used to check the consistency of saddle point calculations of high energy scattering amplitudes of Gross and Mende and Gross and Manes. Some inconsistencies of their saddle point calculations are found even for the string-tree scattering amplitudes of the excited string states. We discuss and calculate the missing terms of the calculation by those authors to recover the stringy Ward identities. In addition, based on the tree-level stringy Ward identities, we give the proof of a general formula, which was proposed previously, of all high energy four-point string-tree amplitudes of arbitrary particles in the string spectrum. In this formula all such scattering amplitudes are expressed in terms of those of tachyons as conjectured by Gross. The formula is extremely simple which manifestly demonstrates the universal high energy behavior of the interactions among all string states. (C) 2004 Elsevier B.V. All rights reserved.
Photochemistry and photodissociation of benzosultine and naphthosultine: electronic relaxation of sultines and kinetics and theoretical studies of fragment o-quinodimethanes
(2005-02-28)
Tang, KC
;
Lee, SJ
;
Chi, SH
;
Lu, KL
;
Chen, WC
Fluorescence decays of benzosultine and naphthosultine excited at 263 nm are detected with time-correlated single-photon counting (TCSPC). Both molecules display biexponential decay with a rapid component (time constants 90 and 350 ps for benzosultine and naphthosultine, respectively) assigned to an electronically excited state S-n at high energy and the slow one (constants 7.5 and 9.0 ns for benzosultine and naphthosultine, respectively) to the S-1 state. Dissociation of both molecules was investigated with nanosecond laser flash photolysis combined with transient absorption to detect the intermediates and products. With excitation at 266 nm, benzosultine yields a transient with absorption maximum at lambda(max) = 370 nm; this transient has a short-lived component with lifetime around 1 mus and a long-lived component. Both components are insensitive to molecular oxygen. The short-lived component is tentatively assigned to the dissociation intermediate and the long-lived to be singlet o-benzoquinodimethane (o-BQDM). Photolysis of naphthosultine yields two transient species with absorption at; lambda(max) = 420 and 520 nm; we assign the former band to triplet-triplet absorption of naphthosultine and the latter to absorption by the product singlet o-naphthoquinodimethane. Optimal geometries, energetics, and vertical transitions of benzosultine, naphthosultine, o-benzoquinodimethane, and o-naphthoquinodimethane are calculated using methods based on density-functional theory (B3LYP/6-311++G**) and time-dependent density-functional theory (TD-DFT). The results of these calculations imply that the ground electronic state of these two o-quinodimethanes (o-QDM) is singlet with a structure of diene form. Their triplet states display a biradical structure. The energy separation between singlet and triplet states of o-benzoquinodimethane is calculated to be ca. 93.6 kJ/mol, but for o-naphthoquinodimethane, it is only ca. 27.8 kJ/mol. (C) 2004 Elsevier B.V. All rights reserved.
High-performance poly-Si TFTs fabricated by implant-to-silicide technique
(2005-03-01)
Lin, CP
;
Mao, YH
;
Tsui, BY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High-performance poly-Si thin-film transistors (TFTs) with fully silicided source/drain (FSD) and ultrashort shallow extension (SDE) fabricated by implant-to-silicide (ITS) technique are proposed for the first time. Using the FSD structure, the S/D parasitic resistance can be suppressed effectively. Using the ITS technique, an ultrashort and defect-free SDE can also be formed quickly at about 600 degreesC. Therefore, the FSD poly-Si TFTs exhibits better current-voltage characteristics than those of conventional TFTs. It should be noted that the on/off current ratios of FSD poly-Si TFT (W/L = 1/4,mum) is over 3.3 x 10(7), and the field-effective mobility of that device is about 141.6 (cm(2)/Vs). Moreover, the superior short-channel characteristics of FSD poly-Si TFTs are also observed. It is therefore believed that the proposed FSD poly-Si TFT is a very promising TFT device.
Modeling channel assignment of small-scale cellular networks
(2005-03-01)
Hung, HN
;
Lee, PC
;
Lin, YB
;
Peng, NF
;
統計學研究所
In a cellular telecommunications network, the call blocking, forced termination, and call incompletion probabilities are major output measures of system performance. Most previous analytic studies assumed that the handover traffic to a cell is a fixed-rate Poisson process. Such assumption may cause significant inaccuracy in modeling. This paper shows that the handover traffic to a cell depends on the workloads of the neighboring cells. Based on this observation, we derive the exact equation for the handover force-termination probability when the mobile station (MS) cell residence times are exponentially distributed. Then, we propose an approximate model with general MS cell residence time distributions. The results are compared with a previously proposed model. Our comparison study indicates that the new model can capture the handover behavior much better than the old one for small-scale cellular networks.
Dynamic wavelength allocation in wavelength division multiplexing radio-over-fiber access network
(2005-03-01)
Lin, WP
;
Peng, WR
;
Chi, S
;
光電工程學系
;
Department of Photonics
We demonstrate that dynamic wavelength add-drop multiplexing technology based on a fiber Bragg grating array (FBGA) can be used to improve the efficiency of wavelengths at a burst traffic load for wavelength division multiplexing radio-over-fiber (ROF) access networks. Moreover, we also propose an upstream injection-locked longitudinal mode scheme in a remote node to offer a simple ROF interface. Experimental results demonstrate that these technologies can provide robust and reliable characteristics for large radio terminals.
管管作品五首
(2005-03-01)
管管
管管作品五首
(2005-03-01)
管管
Preferences toward the constructivist Internet-based learning environments among high school students in Taiwan
(2005-03-01)
Chuang, SC
;
Tsai, CC
;
教育研究所
;
師資培育中心
;
Institute of Education
This paper explored students' preferences toward the constructivist Internet-based learning environments. A Constructivist Internet-based Learning Environment Survey (CILES) was developed. The CILES consisted of six scales, including student negotiation, inquiry learning, reflective thinking, relevance, ease of use and challenge. Questionnaire responses gathered from more than 700 high school students in Taiwan suggested that the survey showed adequate reliability in assessing students' preferences. Students showed stronger preferences for the learning environments, which were easy to use or navigate and integrate complex real-life problems with relevant knowledge in a meaningful way. In addition, males and females shared similar preferences toward the Internet-based learning environments. Students having moderate Internet experiences seemed to be more critical to the preferences of the Internet-based learning environments, in which they may have demanded authentic and facilitated Internet-based learning environments, while their inquiry and reflective thinking should be promoted. (C) 2004 Elsevier Ltd. All rights reserved.
A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation
(2005-03-01)
Li, YM
;
Yu, SM
;
友訊交大聯合研發中心
;
D Link NCTU Joint Res Ctr
We propose in this paper a quantum correction transport model for nanoscale double-gate metal-oxide-semiconductor field effect transistor (MOSFET) device simulation. Based on adaptive finite volume, parallel domain decomposition, monotone iterative, and a posteriori error estimation methods, the model is solved numerically on a PC-based Linux cluster with MPI libraries. Quantum mechanical effect plays an important role in semiconductor nanoscale device simulation. To model this effect. a physical-based quantum correction equation is derived and solved with the hydrodynamic transport model. Numerical calculation of the quantum correction transport model is implemented with the parallel adaptive finite volume method which has recently been proposed by us in deep-submicron semiconductor device simulation. A 20 nm double-gate MOSFET is simulated with the developed quantum transport model and computational technique. Compared with a classical transport model. it is found that this model can account for the quantum mechanical effects of the nanoscale double-gate MOSFET quantitatively. Various biasing conditions have been verified on the simulated device to demonstrate its accuracy. Furthermore. for the same tested problem, the parallel adaptive computation shows very good computational performance in terms of the mesh refinements, the parallel speedup, the load-balancing, and the efficiency. (C) 2004 Elsevier B.V. All rights reserved.
Susceptibilities to amphotericin B and fluconazole of Candida species in TSARY 2002
(2005-03-01)
Yang, YL
;
Li, SY
;
Cheng, HH
;
Lo, HJ
;
生物科技學系
Susceptibilities to amphotericin B and fluconazole of 909 Candida species collected during the Taiwan Surveillance of Antimicrobial Resistance of Yeasts (TSARY) in 2002 were determined by the broth microdilution method. There were 395 (43.5%) Candida albicans, 244 (26.8%) C. tropicalis, 187 (20.6%) C. glabrata, 63 (6.9%) C. parapsilosis, 9 (1%) C. krusei, and 11 (1.2%) others. Among them, 23 (2.5%) isolates were resistant to amphotericin B. They consisted of 10 C. glabrata, 6 C. krusei, 3 C. albicans, 1 C. tropicalis, 1 C. parapsilosis, and 2 others. The resistance rate to amphotericin B has increased compared with that of TSARY 1999 (2.5% versus 0.5%). There were 7 C. krusei, 5 C. albicans, 3 C. glabrata, and 2 others isolates resistant to fluconazole. The resistance rate to fluconazole has decreased from 8.4% in 1999 to 1.9% in 2002. A pattern of coresistance to both amphotericin B and fluconazole was observed. (c) 2005 Elsevier Inc. All rights reserved.
管管作品五首
(2005-03-01)
管管
Estrogen receptor alpha dinucleotide repeat and cytochrorne P450c17 alpha gene polymorphisms are associated with susceptibility to endometriosis
(2005-03-01)
Hsieh, YY
;
Chang, CC
;
Tsai, FJ
;
Lin, CC
;
Tsai, CH
Objective: To investigate the association of endometriosis with estrogen receptor alpha (ER alpha) and cytochrome P450c17 alpha (CYP17) gene polymorphisms in light of the fact that estrogen plays a role in the pathogenesis of endometriosis and the CYP17 enzyme is involved with estrogen biosynthesis. Design: Prospective study. Setting: Genetics and gynecology units. Patient(s): All patients were divided into two groups: group 1, women with endometriosis (n = 119); group 2, normal controls (n = 108). Intervention(s): A dinucleotide (thymine-adenine [TA]) repeat polymorphism lying upstream of the ER alpha gene and A1/A2 polymorphism of the CYP17 gene were amplified by polymerase chain reaction, enzyme restriction, and electrophoresis. Main Outcome Measure(s): The ER Genotypes were classified into A through T (TA repeats, 10-29). The CYP17 genotypes included indigestible (A1 homozygote), heterozygote, and digestible (A2, homozygote). We compared these polymorphism distributions in both groups. Result(s): The percentage of genotypes D-G (TA, 13-16) in both groups were 110.5%, 29.4%, 13.0%, and 11.3% in group 1 and 7.9%, 16.7% 19.9%, and 17.6% in group 2. The genotype E (14 TA repeats) is associated with a higher risk of endometriosis. Proportions of Al homozygote/heterozygote/A2 homozygote for CYP17 were 26.1%/46.2%/27.7% for Group I and 14.8%/44.5%/40.7% for group 2, respectively. The Al homozygote and allele were associated with a higher susceptibility of endornetriosis. Conclusion(s): ER alpha* 14 TA repeats and the CYP17* Al allele are associated with an increased risk of endometriosis. Both polymorphisms are useful markers for predicting endometriosis susceptibility. (Fertil Steril (R) 2005:83:567-72. (c) 2005 by American Society for Reproductive Medicine.)
High-perfomance nonvolatile HfO2 nanocrystal memory
(2005-03-01)
Lin, YH
;
Chien, CH
;
Lin, CT
;
Chang, CY
;
Lei, TF
In this letter, we demonstrate high-performance nonvolatile HfO2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900 degreesC rapid thermal annealing. With this technique. a remarkably high nanocrystal density of as high as 0.9 similar to 1.9 X 10(12) cm(-2) with an average size < 10 nm can be easily achieved. Because HfO2 nanocrystals are well embedded inside an SiO2-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 mus/0.1 ms), long retention time greater than 10(8) s for 10 % charge loss, and excellent endurance after 10(6) P/E cycles.
A stimulus-response model of day-to-day network dynamics
(2005-03-01)
Cho, HJ
;
Hwang, MC
;
運輸與物流管理系註：原交通所+運管所
;
運輸研究中心
;
Department of Transportation and Logistics Management
A general structure of stimulus-response formula is presented to specify the interacted network dynamics under the assumption of a daily learning and adaptive travel behavior. By taking the time derivative of system variable as a response term, the evolution is formulated as a dynamic system. Issues of existence, uniqueness, and stability for the proposed differential equations are briefly discussed. Approximation of a time-varying route-choice model is derived from the addressed path-flow dynamics. Threshold effects on path-flow dynamics are encapsulated into the proposed general structure by incorporating a discontinuous stimulus term. Then, the quasi user equilibrium is achieved when all users feel indifferent between the experienced and predicted travel time provided by intelligent transportation systems, i.e., the whole system dynamics stay within a bounded range. The derived quasi user equilibrium is reduced to Wardrop's user equilibrium as the threshold effects of path-flow dynamics vanish.
An extended Chi2 algorithm for discretization of real value attributes
(2005-03-01)
Su, CT
;
Hsu, JH
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
The Variable Precision Rough Sets (VPRS) model is a powerful tool for data mining, as it has been widely applied to acquire knowledge. Despite its diverse applications in many domains, the VPRS model unfortunately cannot be applied to real-world classification tasks involving continuous attributes. This requires a discretization method to preprocess the data. Discretization is an effective technique to deal with continuous attributes for data mining, especially for the classification problem. The modified Chi2 algorithm is one of the modifications to the Chi2 algorithm, replacing the inconsistency check in the Chi2 algorithm by using the quality of approximation, coined from the Rough Sets Theory (RST), in which it takes into account the effect of degrees of freedom. However, the classification with a controlled degree of uncertainty, or a misclassification error, is outside the realm of RST. This algorithm also ignores the effect of variance in the two merged intervals. In this study, we propose a new algorithm, named the extended Chi2 algorithm, to overcome these two drawbacks. By running the software of See5, our proposed algorithm possesses a better performance than the original and modified Chi2 algorithms.
Defect-enhanced visible electroluminescence of multi-energv silicon-implanted silicon dioxide film
(2005-03-01)
Lin, CJ
;
Lin, GR
;
物理研究所
;
光電工程學系
;
Institute of Physics
White-light and blue-green electroluminescence (EL) of a multirecipe Si-ion-implanted SiO2 (SiO2:Si+) film on Si substrate are demonstrated. The blue-green photoluminescence (PL) is enhanced by the reaction of O-3 drop Si-O-Si drop O-3 --> O-3 drop Si-Si drop O-3 + O-intersticial during Si implantation. After annealing at 1100 degreesC for 180 min, the luminescence at both 415 and 455 nm is markedly enhanced by the complete activation of radiative defects, such as weak oxygen bonds, neutral oxygen vacancies (NOVs), and the precursors of nanocrystallite Si (E-delta' centers). Absorption spectroscopy and electron paramagnetic resonance confirm the existence of NOVs and E-delta' centers. The slowly rising E-delta'-related PL intensity reveals that the formation of nanocrystallite Si (nc-Si) requires longer annealing times and suggests that the activation energy for diffusion of excess Si atoms is higher than that of other defccts in ion implanted SiO2. The EL from the Ag-SiO2:Si+/n-Si-Ag metal-oxide-semiconductor diode changes from deep blue to green as the driving current increase from 0.28 to 3 A. The maximum white-light luminescent power is up to 120 nW at a bias current of 1.25 A.
A hierarchy of importance indices
(2005-03-01)
Hwang, FK
;
應用數學系
;
Department of Applied Mathematics