Browsing by Issue Date, starting with "2005-08-16"

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靜電放電防護電路
(2005-08-16)
柯明道
;
林昆賢
本發明係一種靜電放電防護電路，其應用在具有省電模式功能之積體電路上，當應用本發明之積體電路進入省電模式時，本發明可防止漏電流的產生，並可防止正電壓由輸入或輸出銲墊向VDD電源線充電，以避免積體電路產生運作錯誤之問題，且本發明之VDD電源線至VSS電源線間以及ESD匯流線至VSS電源線間，分別設有一ESD箝制電路，藉此達到全積體電路靜電防護之目的。本發明能防止習知靜電放電防護電路於省電模式時，所產生之漏電流或電路錯誤運作等問題，並能同時達到全晶片靜電防護之效果。
Improved synthesis of 2,2'-dibromo-9,9'-spirobifluorene and its 2,2'-bisdonor-7,7'-bisacceptor-substituted fluorescent derivatives
(2005-08-18)
Chiang, CL
;
Shu, CF
;
Chen, CT
;
應用化學系
;
Department of Applied Chemistry
[graphics] Pure 2,2'-Dibromo-9,9'-spirobifluorene was synthesized by a method that did not involve troublesome dibromination of 9,9'-spirobifluorene or Sandmeyer reaction of 2,2'-diamino-9,9'-spirobifluorene. A series of donor-acceptor orthogonally substituted 9,9'-spirobifluorene was subsequently prepared showing rich variation of fluorescence in solution and in solid state.
Fast wavelength-tunable laser system using fabry-perot laser diode
(2005-08-18)
Chi, Sien
;
Lee, Chien-Chung
;
Yeh, Chien-Hung
The invention relates to a laser system using a multi-longitudinal-mode Fabry-Perot laser diode as an inter-injection light source and a gain cavity formed by other laser diodes of such type so as to achieve the function of fast wavelength switching, so that it is possible to achieve repetitively fast switching of wavelength by varying and controlling the bias voltage of maximum optical gain in said inter-injection type multi-longitudinal-mode Fabry-Perot laser diode so as to achieve three different wavelengths with tuning range of 3.5 nm for a side-mode suppression ratio (SMSR) greater than 19 dB and a response time of wavelength switching in the order of nanosecond.
Proposal for teleportation of charge qubits via super-radiance
(2005-08-18)
Chen, YN
;
Li, CM
;
Chuu, DS
;
Brandes, T
;
電子物理學系
A scheme is proposed to teleport charge qubits via super-radiance. Reservoir-induced entanglement is generated between two semiconductor dots in a microcavity where a quantum state encoded in a third quantum dot is then tuned into collective decay with one of the entangled dots. Teleportation is achieved automatically in our scheme which we also extend to quantum wires.
Synthesis of beta-amino esters by regioselective amination of allyl bromides with aryl and alkyl amines
(2005-08-19)
Chen, HY
;
Patkar, LN
;
Ueng, SH
;
Lin, CC
;
Lee, ASY
One of the two possible regioisomers can be exclusively formed by combining a suitable solvent and a specific amount of triethylamine as a base during the amination of allyl bromide 5. The S(N)2' product 7 was produced using dichloromethane as a solvent and triethylamine (7 equiv) as base; S(N)2 product 6 was predominantly generated in hexane with 0.5 equivalents of triethylamine. Furthermore, a new reaction condition for the efficient cyclization of 7 to yield alpha-methylene beta-lactam 8 using Sn[N(TMS)(2)](2) as a reagent, is disclosed.
利用嵌入式網路之機器人控制系統
(2005-08-21)
吳立偉
;
胡竹生
本發明有關一種利用嵌入式網路之機器人控制系統，其運用嵌入式網路技術以及即時網路協定整合機器人運算架構，使其達到更適合於網路環境系統，並同時擁有高傳輸率、高容錯性、高度系統整合能力、節省能源、及高強度的重複利用能力，其低成本分散式架構更提高了運算的效率及擁有即時通訊能力，並使得複雜的交錯協調控制容易，容易與叢集系統連結，因而降低研發人員的門檻，節省模擬開發成本。
含重金屬固態廢棄物之生物處理裝置及方法
(2005-08-21)
林志高
;
陳勝一
本發明關於含重金屬固態廢棄物之生物處理裝置，主要為一反應槽，及一排放槽；反應槽係採雙管柱狀，內含循環內管，反應槽之底部連接含空氣分布器之加壓空氣管線。本發明亦提供含重金屬固態廢棄物之生物處理方法，利用硫氧化菌之生理特性，處理固態廢棄物中之重金屬成分，在室溫及維持一定曝氣量以上且可產生流體化條件下，使固態廢棄物之重金屬與硫元素顆粒獲得充分之氣固接觸效果，該重金屬物經硫氧化菌之氧化及酸化溶出後而可降低至符合環保標準。
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
(2005-08-22)
Kao, CC
;
Peng, YC
;
Yao, HH
;
Tsai, JY
;
Chang, YH
GaN-based vertical-cavity surface emitting laser with 3 lambda cavity and hybrid mirrors, consisting of the 25 pairs AlN/GaN dielectric Bragg reflector and the 8 pairs Ta2O5/SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53 mJ/cm(2). The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%. (c) 2005 American Institute of Physics.
Low threshold and high power output of a diode-pumped nonlinear mirror mode-locked Nd : GdVO4 laser
(2005-08-22)
Lin, JH
;
Yang, WH
;
Hsieh, WF
;
Lin, KH
;
光電工程學系
We demonstrated nonlinear mirror mode-locking of a diode-pumped Nd:GdVO4 laser by using a 10 mm long KTP crystal. The stable CW mode locking can be reached with the relative low threshold pump power as low as 2.3W. The highest output power of 2.65W at the 10W pump powers are generated with the 121-MHz repetition rate of pulses. It confirms the excellent laser performance of the Nd: GdVO4 for high-peak power of the pulse operation. (c) 2005 Optical Society of America.
A broadband fiber ring laser technique with stable and tunable signal-frequency operation: erratum (vol 13, pg 5240, 2005)
(2005-08-22)
Yeh, CH
;
Chi, S
;
光電工程學系
;
Department of Photonics
We present the corrected version of Fig. 4 below with the original caption. (c) 2005 Optical Society of America.
Method for lifting offGaN pseudomask epitaxy layerusing wafer bonding way
(2005-08-25)
Wu, Yew-Chung
;
Lin, Pei-Yen
;
Peng, Hsien-Chih
Present invention is a method for lifting off GaN pseudomask epitaxy layer using wafer bonding way, wherein GaN epitaxy is obtained by way of selective area growth on a seed and the growth is in a way of pseudomask growth over a substrate. Owing to the different thermal expansion coefficients of the substrate and the GaN seed, by way of annealing and wafer bonding, the GaN epitaxy layer and the epitaxy substrate can be separated, or the GaN epitaxy substrate can be transferred onto another substrate. Thereby, the epitaxy substrate separated is not spoiled during the transferring procedure and can be reused, which lowers the cost; and high-quality GaN epitaxy layer can be transferred to various kinds of substrates for various kinds of usage and for solving the problems of difficulties in the production or the utilization of the substrate (such as difficulties in the cutting, the conductivity, the heat-sinking, and so on.)
Method for lift off GaN pseudomask epitaxy layer using wafer bonding way
(2005-08-25)
Wu, Yew-Chung
;
Lin, Pei-Yen
;
Peng, Hsien-Chih
The epitaxial lateral overgrowth (ELOG) GaN obtains the dangling structure by using wet etching and the transferred substrate to separate from the GaN epitaxy layer by using stress concentration of thermal expansion coefficient of the transferred substrate. It is useful to separate of the GaN epitaxy layer and transferred substrate by using anneal of wafer bonding. The present invention is to provide high selective etching rate, no damage to epitaxial film, low cost, and feasibility for larger commercial sizes. The wet etching method can not damage the separated epitaxial substrate, thus the substrate can be reused. There are various choices of handling substrate for bonding, not limited by the epitaxial method. When the epitaxial film is applied in devices, the low defect density of the epitaxial film can enhance the lifetime and efficiency of the devices. The addition of this improved fabrication process does not require expensive equipment. Moreover, it will reduce the production cost. The epitaxy substrate is a recyclable substrate after separation of wet etching method and the transferred epitaxy layer obtain low defect density, lifetime improvement and low cost.
A novel method for net-shape forming of hypereutectic Al-Si alloys by thixocasting with powder preforms
(2005-08-25)
Chen, CM
;
Yang, CC
;
Chao, CG
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This work presents a novel and feasible method for net-shape forming of hypereutectic A1-Si alloy parts. This method, briefly termed as powder thixocasting in this paper, combines the techniques of thixocasting and conventional powder metallurgy. Consolidated preforms made of gas-atomized and pre-alloyed A1-25Si-2.5Cu-1Mg-0.5Mn powder were used as the feedstock for thixocasting. The alloy powder was preheated under protection of argon atmosphere and then was compacted to form powder preforms. The powder preforms were quickly heated into semi-solid state by induction coils and were immediately thixocast using a die-casting machine. A die with a center gate, a long runner and plate-shaped cavities was designed to examine the feasibility of this process. Results demonstrated that the powder preforms exhibits very good formability by this unique process. The powder thixocast products have satisfied strength and substantial structure with uniform distribution of fine Si particles, while the processing temperature is suitably controlled. This novel process was also successfully used to fabricate compressor scrolls for demonstration. (c) 2004 Elsevier B.V. All rights reserved.
MEDITATION EEG INTERPRETATION BASED ON NOVEL FUZZY-MERGING STRATEGIES AND WAVELET FEATURES
(2005-08-25)
Chang, Kang-Ming
;
Lo, Pei-Chen
;
電控工程研究所
;
Institute of Electrical and Control Engineering
As the advantages of meditation have been outlined literally, scientific exploration of the meditation phenomena becomes significant. Meditation EEG may provide an access to the mental states beyond normal consciousness. It is the first attempt to score the meditation course by EEG. Wavelet analysis and fuzzy c-means (FCM) are applied in the automatic interpretation algorithm. However, FCM applied straightforward to quantitative feature vectors often results in an over-trifling interpretation. As a consequence, this paper presents novel cluster-managing strategies for achieving an interpretation closer to the result of naked-eye examination. The running gray-scale chart, derived by extracting, clustering, and coding the EEG features, reveals five different meditation scenarios differing from those of the controlled subjects.
Visible cascade emission and quantum efficiency in rare earth-activated fluoride phosphors
(2005-08-28)
Tung, CY
;
Chen, TM
;
Lee, TJ
;
Tzeng, HY
;
Jang, SM
Synthesis and light emitting properties of polyacetylenes having pendant fluorene groups
(2005-08-28)
Hsu, CS
;
Huang, CH
;
應用化學系
;
Department of Applied Chemistry
Native-NMOS-triggered SCR With faster turn-on speed for effective ESD protection in a 0.13-mu m CMOS process
(2005-09-01)
Ker, MD
;
Hsu, KC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In order to quickly discharge the electrostatic discharge (ESD) energy and to efficiently protect the ultrathin gate oxide, a novel native-negative-channel metal oxide semiconductor (NMOS)-triggered silicon-controlled rectifier (NANSCR) is proposed for on-chip ESD protection in a 0.13-mu m complementary metal oxide semiconductor (CMOS) process with a voltage supply of 1.2 V. The proposed NANSCR can be designed for the input, output, and power-rail ESD protection circuits without latchup danger. A new whole-chip ESD protection scheme realized with the proposed NANSCR devices is also demonstrated with the consideration of pin-to-pin ESD stress. From the experimental results, the trigger voltage, holding voltage, turn-on resistance, turn-on speed, and charged-device-model (CDM) ESD level of NANSCR can be greatly improved, as compared with the traditional low-voltage-triggering SCR (LVTSCR). Under transmission line pulsing (TLP) stress, the gate leakage current of the gate monitor device protected by the proposed NANSCR is monitored after each TLP pulse, whereas the gate leakage current is not obviously increased. Therefore, the ultrathin gate oxide of the input stage can be safely protected by the new proposed NANSCR against ESD stress in the nanoscale CMOS technology.
本質的策略，策略的本質與解釋的策略
(國立陽明交通大學出版社, 2005-09-01)
黃錦樹
Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
(2005-09-01)
Meng, CC
;
Su, JY
;
Yang, SM
;
電信工程研究所
;
Institute of Communications Engineering
The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior, GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter C(gs) while gate contour affects C(gd). The breakdown voltage has strong dependence on gate contour and little dependence on gage length.
A new approach for audio classification and segmentation using Gabor wavelets and Fisher Linear Discriminator
(2005-09-01)
Lin, RS
;
Chen, LH
;
資訊工程學系
;
Department of Computer Science
Rapid increase in the amount of audio data demands an efficient method to automatically segment or classify audio stream based on its content. In this paper, based on the Gabor wavelet features, an audio classification and segmentation method is proposed. This method will first divide an audio stream into clips, each of which contains one-second audio information. Then, each clip is classified as one of two classes or five classes. Two classes contain speech and music; pure speech, pure music, song, speech with music background, and speech with environmental noise background are for five classes. Finally, a merge technique is provided to do segmentation. In order to make the proposed method robust for a variety of audio sources: we use Fisher Linear Discriminator to obtain features with the highest discriminative ability Experimental results show that the proposed method can achieve over 98% accuracy rate for speech and music discrimination, and more than 95% for a five-way discrimination. By checking the class types of adjacent clips, we can also identify more than 95% audio scene breaks in audio sequence.