Browsing by Issue Date, starting with "2005-08-25"
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Item type:Item, Method for lifting offGaN pseudomask epitaxy layerusing wafer bonding way(2005-08-25) ;Wu, Yew-Chung ;Lin, Pei-YenPeng, Hsien-ChihPresent invention is a method for lifting off GaN pseudomask epitaxy layer using wafer bonding way, wherein GaN epitaxy is obtained by way of selective area growth on a seed and the growth is in a way of pseudomask growth over a substrate. Owing to the different thermal expansion coefficients of the substrate and the GaN seed, by way of annealing and wafer bonding, the GaN epitaxy layer and the epitaxy substrate can be separated, or the GaN epitaxy substrate can be transferred onto another substrate. Thereby, the epitaxy substrate separated is not spoiled during the transferring procedure and can be reused, which lowers the cost; and high-quality GaN epitaxy layer can be transferred to various kinds of substrates for various kinds of usage and for solving the problems of difficulties in the production or the utilization of the substrate (such as difficulties in the cutting, the conductivity, the heat-sinking, and so on.)Item type:Item, Method for lift off GaN pseudomask epitaxy layer using wafer bonding way(2005-08-25) ;Wu, Yew-Chung ;Lin, Pei-YenPeng, Hsien-ChihThe epitaxial lateral overgrowth (ELOG) GaN obtains the dangling structure by using wet etching and the transferred substrate to separate from the GaN epitaxy layer by using stress concentration of thermal expansion coefficient of the transferred substrate. It is useful to separate of the GaN epitaxy layer and transferred substrate by using anneal of wafer bonding. The present invention is to provide high selective etching rate, no damage to epitaxial film, low cost, and feasibility for larger commercial sizes. The wet etching method can not damage the separated epitaxial substrate, thus the substrate can be reused. There are various choices of handling substrate for bonding, not limited by the epitaxial method. When the epitaxial film is applied in devices, the low defect density of the epitaxial film can enhance the lifetime and efficiency of the devices. The addition of this improved fabrication process does not require expensive equipment. Moreover, it will reduce the production cost. The epitaxy substrate is a recyclable substrate after separation of wet etching method and the transferred epitaxy layer obtain low defect density, lifetime improvement and low cost.Item type:Item, A novel method for net-shape forming of hypereutectic Al-Si alloys by thixocasting with powder preforms(2005-08-25) ;Chen, CM ;Yang, CC ;Chao, CG ;材料科學與工程學系Department of Materials Science and EngineeringThis work presents a novel and feasible method for net-shape forming of hypereutectic A1-Si alloy parts. This method, briefly termed as powder thixocasting in this paper, combines the techniques of thixocasting and conventional powder metallurgy. Consolidated preforms made of gas-atomized and pre-alloyed A1-25Si-2.5Cu-1Mg-0.5Mn powder were used as the feedstock for thixocasting. The alloy powder was preheated under protection of argon atmosphere and then was compacted to form powder preforms. The powder preforms were quickly heated into semi-solid state by induction coils and were immediately thixocast using a die-casting machine. A die with a center gate, a long runner and plate-shaped cavities was designed to examine the feasibility of this process. Results demonstrated that the powder preforms exhibits very good formability by this unique process. The powder thixocast products have satisfied strength and substantial structure with uniform distribution of fine Si particles, while the processing temperature is suitably controlled. This novel process was also successfully used to fabricate compressor scrolls for demonstration. (c) 2004 Elsevier B.V. All rights reserved.Item type:Item, MEDITATION EEG INTERPRETATION BASED ON NOVEL FUZZY-MERGING STRATEGIES AND WAVELET FEATURES(2005-08-25) ;Chang, Kang-Ming ;Lo, Pei-Chen ;電控工程研究所Institute of Electrical and Control EngineeringAs the advantages of meditation have been outlined literally, scientific exploration of the meditation phenomena becomes significant. Meditation EEG may provide an access to the mental states beyond normal consciousness. It is the first attempt to score the meditation course by EEG. Wavelet analysis and fuzzy c-means (FCM) are applied in the automatic interpretation algorithm. However, FCM applied straightforward to quantitative feature vectors often results in an over-trifling interpretation. As a consequence, this paper presents novel cluster-managing strategies for achieving an interpretation closer to the result of naked-eye examination. The running gray-scale chart, derived by extracting, clustering, and coding the EEG features, reveals five different meditation scenarios differing from those of the controlled subjects.Item type:Item, Visible cascade emission and quantum efficiency in rare earth-activated fluoride phosphors(2005-08-28) ;Tung, CY ;Chen, TM ;Lee, TJ ;Tzeng, HYJang, SMItem type:Item, Synthesis and light emitting properties of polyacetylenes having pendant fluorene groups(2005-08-28) ;Hsu, CS ;Huang, CH ;應用化學系Department of Applied ChemistryItem type:Item, Native-NMOS-triggered SCR With faster turn-on speed for effective ESD protection in a 0.13-mu m CMOS process(2005-09-01) ;Ker, MD ;Hsu, KC ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsIn order to quickly discharge the electrostatic discharge (ESD) energy and to efficiently protect the ultrathin gate oxide, a novel native-negative-channel metal oxide semiconductor (NMOS)-triggered silicon-controlled rectifier (NANSCR) is proposed for on-chip ESD protection in a 0.13-mu m complementary metal oxide semiconductor (CMOS) process with a voltage supply of 1.2 V. The proposed NANSCR can be designed for the input, output, and power-rail ESD protection circuits without latchup danger. A new whole-chip ESD protection scheme realized with the proposed NANSCR devices is also demonstrated with the consideration of pin-to-pin ESD stress. From the experimental results, the trigger voltage, holding voltage, turn-on resistance, turn-on speed, and charged-device-model (CDM) ESD level of NANSCR can be greatly improved, as compared with the traditional low-voltage-triggering SCR (LVTSCR). Under transmission line pulsing (TLP) stress, the gate leakage current of the gate monitor device protected by the proposed NANSCR is monitored after each TLP pulse, whereas the gate leakage current is not obviously increased. Therefore, the ultrathin gate oxide of the input stage can be safely protected by the new proposed NANSCR against ESD stress in the nanoscale CMOS technology.Item type:Item, 本質的策略,策略的本質與解釋的策略(國立陽明交通大學出版社, 2005-09-01)黃錦樹Item type:Item, Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations(2005-09-01) ;Meng, CC ;Su, JY ;Yang, SM ;電信工程研究所Institute of Communications EngineeringThe gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior, GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter C(gs) while gate contour affects C(gd). The breakdown voltage has strong dependence on gate contour and little dependence on gage length.Item type:Item, A new approach for audio classification and segmentation using Gabor wavelets and Fisher Linear Discriminator(2005-09-01) ;Lin, RS ;Chen, LH ;資訊工程學系Department of Computer ScienceRapid increase in the amount of audio data demands an efficient method to automatically segment or classify audio stream based on its content. In this paper, based on the Gabor wavelet features, an audio classification and segmentation method is proposed. This method will first divide an audio stream into clips, each of which contains one-second audio information. Then, each clip is classified as one of two classes or five classes. Two classes contain speech and music; pure speech, pure music, song, speech with music background, and speech with environmental noise background are for five classes. Finally, a merge technique is provided to do segmentation. In order to make the proposed method robust for a variety of audio sources: we use Fisher Linear Discriminator to obtain features with the highest discriminative ability Experimental results show that the proposed method can achieve over 98% accuracy rate for speech and music discrimination, and more than 95% for a five-way discrimination. By checking the class types of adjacent clips, we can also identify more than 95% audio scene breaks in audio sequence.Item type:Item, A background comparator calibration technique for flash analog-to-digital converters(2005-09-01) ;Huang, CC ;Wu, JT ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsThis paper presents a background calibration technique for trimming the input-referred offsets of the comparators in a flash analog-to-digital converter (ADC) without interrupting the ADC's normal operation. For a random-chopping comparator, the polarity of its offset is detected by observing the code density of its comparison results. Binary feedback is then used to digitally adjust the comparator's offset so that the offset is minimized. All calibration procedures are performed in the digital domain. The calibration performance is characterized by the converging speed of the feedback loop and the offset fluctuation due to the disturbance of the ADC's input. These two performance indexes of a background-calibrated comparator (BCC) are determined by three parameters: the probabilistic distribution of the ADC's input, the BCC's offset quantized step size, and the threshold of an internal bilateral peak detector. The offset fluctuation of a BCC can be drastically reduced by employing a windowing mechanism. The use of windowed BCCs in a flash ADC can introduce nonmonotonic-threshold (NMT) effects which include an increase in calibration settling time and an increase in sigma(V-OS). The use of uncorrelated random chopping for neighboring BCCs can ensure the validity of offset detection and mitigate the NMT effects.Item type:Item, ESD protection design for 1-to 10-GHz distributed amplifier in CMOS technology(2005-09-01) ;Ker, MD ;Hsiao, YW ;Kuo, BJ ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsTwo distributed electrostatic discharge (ESD) protection schemes are presented and applied to protect distributed amplifiers (DAs) against ESD stresses. Fabricated in a standard 0.25-mu m CMOS process, the DA with the first protection scheme of the equal-sized distributed ESD (ES-DESD) protection scheme, contributing an extra 300 fF parasitic capacitance to the circuit, can sustain the human-body model (HBM) ESD level of 5.5 kV and machine-model (MM) ESD level of 325 V and exhibits the flat-gain of 4.7 +/- l dB from 1 to 10 GHz. With the same amount of parasitic capacitance, the DA with the second protection scheme of the decreasing-sized distributed ESD (DS-DESD) protection scheme achieves better ESD robustness, where the HBM ESD level over 8 kV and MM ESD level is 575 V, and has the flat-gain of 4.9 +/- 1.1 dB over the 1 to 9.2-GHz band. With these two proposed ESD protection schemes, the broad-band RF performances and. high ESD robustness of the DA can be successfully codesigned to meet the application specifications.Item type:Item, Closure to "Electronic-Based procedure for managing unbalanced bids" by Wei-Chih Wang(2005-09-01) ;Wang, WC ;土木工程學系Department of Civil EngineeringItem type:Item, Special issue on e-learning - Foreword(2005-09-01) ;Lewis, R ;Chan, TW ;Chou, C ;Sun, CT資訊工程學系Item type:Item, Analysis and design of one-bit noise-shaping quantizer using variable structure control approach(2005-09-01) ;Hu, J ;Yu, SH ;電控工程研究所Institute of Electrical and Control EngineeringThis paper offers a straightforward analysis of a one-bit noise-shaping quantizer based on variable structure control methods. The method uses the concept of equivalent control to access the bound on the state signals when the sliding condition is reached. For a stable loop filter, the global stability can be proved to exist by using the Lyanpunov stability theory. For an unstable loop filter, this paper proposes a state constraint approach to ensure that the sliding condition is achieved. Simulation examples and an experimental circuit constructed using off-the-shelf electronic components are given to demonstrate the correctness of the theoretical analysis.Item type:Item, The interplay between different forms of CAI and students' preferences of learning environment in the secondary science class(2005-09-01) ;Chang, CY ;Tsai, CC ;教育研究所 ;師資培育中心Institute of EducationThis evaluation study investigated the effects of a teacher-centered versus student-centered computer-assisted instruction (CAI) on 10th graders' earth science student learning outcomes. This study also explored whether the effects of different forms of computer-assisted instruction (CAI) on student learning outcomes were influenced by student preferences of learning environment (PLE). A total of 347 10th-grade senior high school students participated in this nonequivalent control group quasiexperiment. During a one-week period, one group of students (n = 216) were taught by a teacher-centered CAI (TCCAI) model whereas the other group of students (n = 131) were subject to a student-centered CAI (SCCAI) method. Results showed that (a) no statistically significant difference on students' earth science achievement was found for either group; (b) TCCAI, group had significantly better attitudes toward earth science than did the SCCAI group; furthermore (c) a significant PLE-treatment interaction was found on student attitudes toward the subject matter, where the teacher-centered instructional approach seemed to enhance more positive attitudes of less constructivist-oriented learning preferences students, whereas the student-centered method was more beneficial to more constructivist-oriented learning preferences students on their attitudes toward earth science in a computer-assisted learning environment. (c) 2005 Wiley Periodicals, Inc.Item type:Item, Influence of the direction of motion on the inelastic interaction between electrons and solid surfaces(2005-09-01) ;Li, YC ;Tu, YH ;Kwei, CM ;Tung, CJ電子工程學系及電子研究所Theoretical derivations of the inelastic differential inverse mean free path (DIMFP) and inelastic mean free path (IMFP) for electrons crossing solid surfaces were made for different crossing angles and electron distances relative to the crossing point at the surface. Individual contributions from volume and surface excitations were separated and analyzed for electrons traveling inside and outside the solid. Extended Drude dielectric functions were employed to calculate the DIMFP and inverse IMFP for electrons incident into and escaping from Cu. It was found that the DIMFP and inverse IMFP for electrons moving inside the solid were approximately independent of crossing angle and position of electrons due to the compensation of volume and surface excitations. For electrons moving deep inside the solid, the DIMFP and inverse IMFP reduced to the values for electrons moving in an infinite solid. As electrons traveling in the vacuum, the DIMFP and inverse IMFP became greater for glancing incident and escaping angles since surface excitations were more probable. The surface excitation parameter (SEP) for electrons traveling in vacuum showed an angular dependence. The SEP of escaping electrons was found larger than that of incident electrons due to the attractive force exerted by the induced surface charges. The calculated SEP was found to follow a simple expression. (c) 2005 Elsevier B.V. All rights reserved.Item type:Item, Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic field(2005-09-01) ;Zakharova, A ;Nilsson, K ;Chao, KA ;Yen, ST電子工程學系及電子研究所We investigate spin-dependent interband magnetotunneling processes in strained broken-gap resonant tunneling structures made from InAs, AlSb, and GaSb, which are promising materials for quantum devices. InAs/AlSb/GaSb/InAs/AlSb/GaSb double-barrier structures grown on both InAs and GaSb are considered. Transmission coefficients for interband tunneling processes from individual eigenstates in the InAs emitter as well as current-voltage characteristics were calculated using a six-band k center dot p model and the scattering matrix method. We predict that due to lattice-mismatch induced strain, the interband tunneling current density for the structure grown on InAs can be one or two orders of magnitude less than that for the structure grown on GaSb. Furthermore, as a consequence of interband magnetotunneling, structures grown on different substrates yield different spin polarization of the tunneling current. It is obtained that the current spin polarization can be greater than 90%. These resonant tunneling structures can be used as spin filters in the rapidly growing field of spintronics.Item type:Item, Synthesis and characterization of Ni-P-CNT's nanocomposite film for MEMS applications(2005-09-01) ;Shen, GR ;Cheng, YT ;Tsai, LN ;機械工程學系電子工程學系及電子研究所An electroless phosphorus nickel-carbon nanotube's (Ni-P-CNT) nanocomposite film synthesis and related process for microelectromechanical systems device fabrication have been successfully developed and presented in this paper. With a special acid oxidative method, a well-dispersed nickel-CNT's colloidal solution has been produced without any aggregation, which is very suitable for microstructure fabrication. The nanoindentation measurement indicates that the Young's modulus and hardness of the Ni-P-CNT's nanocomposite film plated in the bath with 0.028-g/L CNTs can greatly increase up to 665.9 and 28.9 GPa, respectively, which are approximately four times larger than that of pure nickel. Moreover, the content of CNTs in the Ni-P-CNT's films is measured by an elemental analyzer. Via the electrical resistivity measurement using a four-point probe, it is found that the electrical property of the nanocomposite film can be well characterized using a Maxwell-Wagner model for a two-phase mixture. The performance improvements of the electrothermal microactuator made of the nanocomposite, including device strength and power efficiency, have been proven similar to the actuator made of the Ni-diamond composites by electrolytic plating by Tsai et al, but with more efficiency and higher strength than the Ni-diamond device does.Item type:Item, Assessment of fire protection performance of water mist applied in exhaust ducts for semiconductor fabrication process(2005-09-01) ;Shu, YL ;Jeng, WJ ;Chiu, CW ;Chen, CH機械工程學系Fume exhaust pipes used in semiconductor facilities underwent a series of fire tests to evaluate the performance of a water mist system. The parameters considered were the amount of water that the mist nozzles used, the air flow velocity, the fire intensity and the water mist system operating pressure. In order to make a performance comparison, tests were also performed with a standard sprinkler system. The base case served as a reference and applied a single water mist nozzle (100 bar operating pressure, 7.31/min water volume flux and 200 pin mean droplet size) installed in the pipe (60 cm in diameter) subjected to a 350 degrees C air flow with an average velocity of 2 m/s. In such a case, the temperature in the hot flow dropped sharply as the water mist nozzle was activated and reached a 60 degrees C saturation point. Under the same operating conditions, four mist nozzles were applied, and made no further contribution to reducing the fire temperature compared with the case using only a single nozzle. Similar fire protection performances to that in the base case were still retained when the exhaust flow velocity increased to 3 m/s and the inlet air temperature was increased to 500 degrees C due to a stronger input fire scenario, respectively. Changing to a water mist system produced a better performance than a standard sprinkler. With regard to the effect of operating pressure of water mist system, a higher operating pressure can have a better. performance. The results above indicate that the droplet size in a water-related fire protection system plays a critical role. Copyright (c) 2005 John Wiley & Sons, Ltd.