Browsing by Issue Date, starting with "2006-02-16"

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製作自行聚合奈米粒之方法
(2006-02-16)
陳衛國
;
李明知
;
周武清
;
陳文雄
;
柯文政
一種用以成長奈米粒的方法，係可在任何晶格匹配度材料之緩衝層上，不需透過圖案遮罩(mask)之製作，即可自行聚合方式(self–assembled)成長包含III–V族、II–VI族或IV–IV族材料之二元、三元以上化合物之奈米粒為特徵。該方法係在基板上先成長任一種材料之緩衝層，然後於適當溫度範圍內完成週期性流量調制磊晶成長，包含：在通入第二反應物前，先通入清除氣體並調制第一反應物至較低第一莫耳流量範圍，致使通入之第二反應物得以在緩衝層上形成金屬或該高金屬含量化合物島狀物，再通入清除氣體以清除殘餘未形成金屬或高金屬含量化合物島狀物之第二反應物，再調制第一反應物至較高第二莫耳流量範圍使該金屬或該高金屬含量化合物島狀物可以形成奈米粒。最後在完成週期性流量調制磊晶成長後，於較高之成長溫度下進行再結晶化步驟，以形成結構性佳之高品質奈米粒。
以液相沈積成長二氧化鉿薄膜之方法
(2006-02-16)
蕭智文
;
羅正忠
;
陳昶維
本發明關於利用液相沉積法以成長具有高介電常數之絕緣膜，特別是二氧化鉿絕緣層之方法，包括：(a)將二氧化鉿(HfO2)粉末加入氫氟酸(HF)溶液中，形成氫氟鉿酸鹽(HxHfyFz)溶液，前於低溫下加以攪拌溶解，使成為飽和溶液；(b)加入去離子水於該飽和溶液中，使其成為過飽和溶液；(c)將矽基板置入該過飽和溶液中，由於化學逆反應，可沉積高介電常數二氧化鉿(HfO2)薄膜於該矽基板上。
保護銲錫接點之方法及可降低銲錫接點中電遷移及焦耳熱效應之構造
(2006-02-16)
陳智
;
葉長青
;
杜經寧
本發明提供一種保護銲錫接點之方法，包括於基板與晶片之銲錫接點上，製作金屬墊，然後再製作連接基板與晶片之凸塊，其中該金屬墊層(UBM或Pad metallurgy)與晶片或基板連接之端點位置上，被加入一高電阻率之材料以均化凸塊之電子流分布，而可降低電遷移、焦耳熱效應升溫現象。
遞減面積之分散式靜電放電防護電路
(2006-02-16)
柯明道
;
郭秉捷
本發明提出一種遞減面積之分散式靜電放電防護電路，包括一信號輸入端、一接地端、一信號輸出端，且有一電源供應端，並有數靜電放電防護元件組相並聯在信號輸入端及信號輸出端間，且每一靜電放電防護元件組連接於電源供應端及接地端間，且在信號輸入端及信號輸出端間串聯有數高阻抗傳輸線，且每一高阻抗傳輸線分別連接於信號輸入端、靜電放電防護元件組及信號輸出端間，其特徵在於：每一靜電放電防護元件組包含二靜電放電防護元件，且靜電放電防護元件組內之靜電放電防護元件的面積尺寸係由信號輸入端至信號輸出端呈現遞減順序。本發明兼具寬頻電路及阻抗匹配之特點，並具較佳之靜電放電防護效果。
Effect of the transition metal on the synthesis of quaternary sulfides MPb8In17S34 (M = Cu, Ag, Au)
(2006-02-20)
Wang, KC
;
Lee, CS
;
應用化學系
;
Department of Applied Chemistry
Quaternary sulfides MPb8In17S34 (M = Cu, Ag, Au) were synthesized at 1123 K from their elements in stoichiometric ratios. These compounds crystallize in monoclinic space group P2(1)/m. The crystal structures feature combinations of (2)(infinity)[InS2] (NaCl111-type) and (2)(infinity)[MPb2In3S6] (NaCl100-type) slabs. These compounds are semiconductors with band gaps near 1.3 eV.
A new yellow fluorescent dopant for high-efficiency organic light-emitting devices
(2006-02-21)
Wu, YS
;
Liu, TH
;
Chen, HH
;
Chen, CH
;
應用化學系
We describe the design and synthesis of a sterically hindered yellow dopant, tetra(l-butyl)rubrene (TBRb) which, when doped in either 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl or aluminum tris(8-hydroxyquinoline) (Alq(3)) as emitter, shows nearly 25% increase in luminance efficiency over that of the state-of-the-art rubrene (Rb) device without significantly effecting its corresponding color. At 5% doping in Alq3 and 20 mA/cm(2) current drive condition, the electroluminescence efficiency of TBRb reaches 8.5 cd/A and 2.8 1m/W with a yellow color of Commission Internationale de l'Eclairage chromaticity coordinates (CIEx,y)=[0.52,0.48], which is among the best ever reported for yellow electrofluorescence in organic light-emitting devices. (c) 2005 Elsevier B.V. All rights reserved.
Microelectro mechanical system for magneto-optic data storage apparatus
(2006-02-21)
Hsu
;
Wensyang
;
Shieh
;
Han-Ping
;
Sun
The present invention relates to a Microelectro mechanical system structure. More specifically the invention relates to utilize a sacrificial layer to fabricate an air bearing structure, followed by forming an aperture, and reducing the aperture to nano-scale by electroplating. And then, by using of two thick film photoresist films for twice electroplating fabrication, for fabricate metal microcoils having high aspect ratio structure and interconnection metal line, to achieve efficiencies of utilizing area and reducing resistance. Moreover, proceed lithography depends on different portions and exposure dose. Then form a single photoresist film to have a specific dimension and thickness structure, finally, by using reflow process, forming a magneto-optic (MO) pickup head comprises of Supersphere Solid Immersion Lens (SSIL), nano-aperture, microcoils and air bearing by using an integrated fabrication, with advantages such as no high cost device and precise apparatus are required in the process of fabrication, mass production in batch fabrication, without step of assembly, for high-density data storage and rewritable record.
電荷幫浦式直流轉直流轉換器增益電路
(2006-02-21)
張隆國
;
胡致暉
本發明係為藉由電荷幫浦輸出級跨壓損失修正電路(PGI)，使輸出級的切換開關能適當的阻止輸出端的電荷倒灌回升壓電路中，並且不會產生輸出級的跨壓損失，改善輸出電壓的限制，且可搭配一比較器與一緩衝電路形成ni指數倍率升壓的直流轉直流電源轉換電路，簡化本發明之整體的升壓電路，可減少製作成本，適用於低輸入電壓(如：一般電池)的情沉下操作，可作為直流轉直流的電壓轉換器。
Solar-pumped active device
(2006-02-23)
Chi, Sien
;
Chen, Nan-Kuang
;
Shy, Jow-Tsong
The present invention provides a solar-pumped active device which utilizes a holographic antenna grating on a solar energy silicon substrate to select specific diffracted wavelength and couple pump wavelength in an approximately vertical way and converge the pump wavelength to excite an optical gain medium so that an optical amplifier or a laser can be obtained. The present invention requires no big size and is flexible over the surface shape and is suitable for free space optical communications on the ground and satellite optical communications. It means that the holographic antenna grating can be applied on the top floor of a building or on the glass surface of an outer wall. If it is applied to a satellite, the present invention can be deposited on a solar energy cell substrate to form a high optical amplification so that not only the electricity required in satellite optical communications can be reduced, but also a high-speed and large capacity of data can be transferred between satellites.
Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
(2006-02-24)
Cheng, YL
;
Wang, YL
;
Hwang, GJ
;
O'Neill, ML
;
Karwacki, EJ
Low dielectric constant (Low-k) films (SiCOH) were deposited from diethoxymethylsiliane [DEMS; SiH(CH3) (OC2H5)(2)] which has two ethoxy groups along with one methyl group attached to the silicon atoms. The deposited films have been characterized for different oxygen flows, ranging from 50 to 250 standard cubic centimeters per minute (seem). The growth rate is increased with the increasing oxygen (O-2) flow. The absorbance spectrum of Fourier transform infrared spectroscopy shows that the frequency of Si-O stretching vibration mode in the SiCOH film is shifted to a higher wave number with the increase of oxygen flow. It is deduced that the oxygen does not participate in a simple oxidative mechanism, and has no apparent impact on the methyl content even if the relative Si-O content of the deposited films is up to an O-2/DEMS flow rate ratio of 1:1. Also, the refractive index is decreased with increasing the oxygen flow and slightly increased with the deposition temperature. The dielectric constant of the SiCOH is investigated between 2.7 and 3.2, depending on the deposition temperature and O-2/DEMS flow rate ratio, which is lower than that of the current OSG films (k=2.9-3.3). SiCOH films deposited with DEMS only exhibit higher mechanical hardness and lower leakage current than those deposited with both DEMS and oxygen. (c) 2005 Elsevier B.V. All rights reserved.
Investigation of overpotential and seed thickness on damascene copper electroplating
(2006-02-24)
Chen, KW
;
Wang, YL
;
Chang, L
;
Li, FY
;
Chang, SC
This study found that higher overpotential from higher plating current density and a thinner seed layer resulted in more incorporation of sulfur impurities into a deposited copper film. Our results suggested that the higher plating overpotential resulted in smaller copper grains with more grain boundaries where more impurities were trapped. To achieve a defect-free filling in vias, the optimization of the plating current density and the seed layer thickness was necessary. A copper seed with thickness less than 30 generated a sulfur-rich copper film, while, thickness larger than 200 nm for 0.13-nm technologies, the copper seed led to a poor gapfilling with a void after electroplating. (c) 2005 Elsevier B.V. All rights reserved.
The 3rd Asian Conference on Chemical Vapor Deposition (3rd Asian-CVD), Taipei, Taiwan, November 12-14, 2004 - Preface
(2006-02-24)
Feng, ZC
;
Chen, CF
;
Kuo, CT
;
Williams, K
;
Shan, W
The study of diffusion and nucleation for COSi2 formation by oxide-mediated cobalt silicidation
(2006-02-24)
Chang, JJ
;
Liu, CP
;
Hsieh, TE
;
Wang, YL
;
材料科學與工程學系
The role of cobalt in oxide-mediated silicidation is studied in terms of diffusion and nucleation by varying annealing conditions, oxide thickness and implantation in Si substrate. Electroscopic imaging in transmission electron microscopy shows that SiOx act as a one-way diffusion barrier reducing the Co effective concentration at the cobalt silicide growth interface leading to CoSi2 as the first formation phase during silicidation. X-ray photoelectron spectroscopy analysis shows that unreacted Co coexists with CoSi2 at the interface between the SiOx layer and Si substrate, implying that Co diffusion rate is faster than CoSi, nucleation rate. An Si-implanted substrate can increase the CoSi2 nucleation rate and reduce the Co accumulation. (c) 2005 Elsevier B.V. All rights reserved.
A novel method for growing polycrystalline Ge layer by using UHVCVD
(2006-02-24)
Tu, CH
;
Chang, TC
;
Liu, PT
;
Yang, TH
;
Zan, HW
Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 degrees C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform rain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method. (c) 2005 Elsevier B.V. All rights reserved.
Nanofabrication and the structure-property analyses of phase-change alloy-ended CNTs
(2006-02-24)
Wang, WH
;
Chao, KM
;
Teng, IJ
;
Kuo, CT
;
材料科學與工程學系
In order to cap the tip cavities of the open-ended carbon nanotubes (CNTs) with the phase-change alloy for potential applications as the nano-resolution storage media, the Co-assisted CNTs were first synthesized by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with H-2 and CH4 as the gas sources. Then, the as-grown CNTs were post-treated in H-plasma atmosphere to remove the carbon layers covered on catalysts, and subsequently immersed in HNO3 solution to remove the catalysts from the tips. The open-ended CNTs with a bowl-like-shape tips were followed by coating with a phase-change alloy layer of GeSbTeSn via sputtering process, and then heat treated in vacuum for 30 min to trim the alloy off from the sidewalls of CNTs to obtain the alloy-ended CNTs. The structures and properties in each processing step were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and Auger electron spectroscopy (AES). The experimental results show that the well-oriented phase-change alloy-ended CNTs over a large area are fabricated successfully. Furthermore, the Auger analyses show the compositions of the phase-change alloys may be changed from Te-rich to Ge-rich after being capped on the tips of CNTs. (c) 2005 Elsevier B.V. All rights reserved.
Mn,Cd-metallothionein-2: A room temperature magnetic protean
(2006-02-24)
Chang, CC
;
Lee, SF
;
Sun, KW
;
Ho, CC
;
Chen, YT
Naturally occurring metallothionein (MT) is a metal binding protein, which binds to seven Zn2+ through 20 conserved cysteines and forms two metal binding clusters with a Zinc-Blende structure. We demonstrate that the MT, when substituting the Zn2+ ions by Mn2+ and Cd2+, exhibits magnetic hysteresis loop observable by SQUID from 10 to 330 K. The magnetic moment may have originated from the bridging effect of the sulfur atoms between the metal ions that leads to the alignment of the electron spins of the Mn2+ ions inside the clusters. The protein backbone may restrain the net spin moment of Mn2+ ions from thermal fluctuation. The modified magnetic-metallothionein is a novel approach to creating molecular magnets with operating temperatures up to 330 K. (c) 2005 Elsevier Inc. All rights reserved.
Precipitates formation and its impact on the structure of plasma-deposited fluorinated silicon oxide films
(2006-02-24)
Wu, J
;
Wang, YL
;
Kuo, CT
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Fluorine-doped silicon oxide (SiOF) films prepared by plasma enhanced chemical vapor deposition would generate precipitates on the film surface during exposure to air. The chemical and structural changes of SiOF films during the precipitation process were investigated under various fluorine-doping concentrations in SiOF films. Film composition depth profiles characterized by secondary ion mass spectrometer (SIMS) indicate uneven fluorine distribution within SiOF film after precipitation. During the precipitation process, the Fourier transform infrared (FTIR) spectra of SiOF films showed the decreasing trend in the intensities of Si-F-n (n = 1, 2...) bonding peak, whereas an opposing trend in Si-OH bonding as well as the shoulder peak of Si-O stretching mode were observed. Moreover, the formation of the precipitates lead to lower refractive index, a relief in compressive residual stress, and higher wet etch rate of SiOF films. The structural changes of SiOF films due to the formation of precipitates were extensively discussed. (c) 2005 Elsevier B.V. All rights reserved.
Effects of ammonia plasma treatment on the surface characteristics of carbon fibers
(2006-02-24)
Wen, HC
;
Yang, K
;
Ou, KL
;
Wu, WF
;
Chou, CP
Carbon fibers were grown from cobalt catalysts with larger size (> 100 nm), and the size distribution can be controlled by pretreatment. Pretreated cobalt catalytic-layers were observed as islands, which can enhance the growth of carbon fibers. The carbon fibers were treated by ammonia plasma in a PECVD system. High-energy ammonia plasma not only can cause damage but also adsorb on carbon fibers. The ammonia plasma treatment resulted in the etching effect. It is also observed that the more treatment time, the more disorder in structures of carbon fibers. The N-H functional groups were found on the surfaces of ammonia plasma treated carbon fibers and this observation can be further investigated to develop chemical sensor application. (c) 2005 Elsevier B.V. All rights reserved.
Synthesis and characteristics of polyimide/siloxane hybrid films for reliability adhesion
(2006-02-24)
Tsai, MH
;
Chiang, PC
;
Whang, WT
;
Ko, CJ
;
Huang, SL
Polyimide/siloxane (PISi) hybrid films from 2,2'-bis[4-(3-aminodiphenoxy)phenyl]sulfone (in-BAPS), 3,3'-oxydiphthatic anhydride (ODPA) and p-aminopropyltrimethoxysilane (APrTS) have been successfully fabricated by an in-situ sol-gel process. The APrTS is used to introduce siloxane structure and to be the end-capped agent to control the polymer block chain length in the range of 5000-20000 g/mol. The network structure of the PISi hybrid film is formed through the hydrolysis and condensation reactions. The PISi hybrid films with various polyimide block chain lengths are characterized with regard to the structure effect, mechanical properties, adhesion strength, adhesive melting flow and thermal stability. The result indicates that the more APrTS is contained, the shorter of the polyimide block chain length is formed and thus the lower inherent viscosity of APrTS-PAA is obtained. It is also suggested that the cross-linked density of the PISi hybrid film increases with the increase in the amount of APrTS. The network structure of the hybrid film reinforces the pure PI and makes the coefficient of thermal expansion (CTE) as well as adhesive melting flow decrease. Based on the dynamic mechanical analyses (DMA), the hybrid film with higher cross-linked density possesses superior mechanical property at elevated temperature. In addition, the introduction of APrTS causes an increase in thermal stability due to the network structure of hybrid film and the filler effect of the siloxane. (c) 2005 Elsevier B.V. All rights reserved.
The 3rd Asian Conference on Chemical Vapor Deposition (3rd Asian-CVD), Taipei, Taiwan, November 12-14, 2004 - Preface
(2006-02-24)
Feng, ZC
;
Chen, CF
;
Kuo, CT
;
Williams, K
;
Shan, W