Browsing by Issue Date, starting with "2006-03-09"

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Method of manufacturing aluminum oxide film with arrayed nanometric pores
(2006-03-09)
Chao, Chuen-Guang
;
Chen, Chien-Chon
;
Chen, Jung-Hsuan
;
Kuo, Chin-Guo
The present invention pertains to a method of manufacturing an aluminum oxide film with arrayed nanometric pores, wherein a commercial aluminum substrate is provided firstly; then the aluminum substrate is annealed and then electro-polished in order to have a mirror-like surface, and then anodized in order to form a aluminum oxide film with a plurality of nanometric pores, which are aligned in array, and then annealed in order that an oxidation reaction can happen thereon and generates oxide, which via self-diffusion, fills some of smaller pores with the pores size being uniformed; lastly a pore-widening is undertaken in order to increase the diameters of the pores. The present invention can accomplish the nanometric pores aligned in array and with an uniform pore diameter, and simultaneously have the advantages of simplified manufacturing process, easier operational control and reduced cost.
Charge-orbital ordering and verwey transition in magnetite measured by resonant soft X-ray scattering
(2006-03-10)
Huang, DJ
;
Lin, HJ
;
Okamoto, J
;
Chao, KS
;
Jeng, HT
We report experimental evidence for the charge-orbital ordering in magnetite below the Verwey transition temperature T-V. Measurements of O K-edge resonant x-ray scattering on magnetite reveal that the O 2p states in the vicinity of the Fermi level exhibit a charge-orbital ordering along the c axis with a spatial periodicity of the doubled lattice parameter of the undistorted cubic phase. Such a charge-orbital ordering vanishes abruptly above T-V and exhibits a thermal hysteresis, correlating closely with the Verwey transition in magnetite.
Study in IC chip failure during pick-up process by using experimental and finite element methods
(2006-03-10)
Cheng, TH
;
Du, CC
;
Tseng, CH
;
機械工程學系
;
Department of Mechanical Engineering
Stress contours of an IC chip and the displacement contours of the adhesive between an IC chip and blue tape in the pick-up integrated circuit (IC) chip process are obtained using experimental and finite element methods. The physical and mechanical properties of the material used in FEM are determined by pre-experimental tests. Some factors that importantly influence the failure of a pick-up IC chip during the pick-up IC chip process are proposed. The pre-expermiental material properties are manifest in the practical behavior of material, so the post-experimental results are approximately consistent with the FEM results. Post-expermients further demonstrated that the findings of this study can be used to increase the success rate of the pick-up IC chip process. (c) 2005 Elsevier B.V. All rights reserved.
高效率頭相關轉換函數合成運算方法
(2006-03-11)
白明憲
;
黃嘉文
本發明係提出一種高效率頭相關轉換函數(HRTF)合成運算方法，其係應用頭相關轉換函數對於聲源信號進行空間之定位，並為解決習知以摺積運算需佔用大量資源，而造成在處理上效率較差之困擾，係將頭相關轉換函數中的空間資料矩陣以一奇異值分解法將資料進行分解並降階處理，以減少需運算之資料量，並為能得到高精準的音源定位，係以內插方式計算求得所需空間定位資訊。此發明以其高速度之運算效能與模擬全方位空間資訊之能力，更能實現將目標音源產生連續移動音像的效果。
Formation of silicon germanium nitride layer with distributed charge storage elements
(2006-03-13)
Tu, CH
;
Chang, TC
;
Liu, PT
;
Liu, HC
;
Chen, WR
The formation of silicon germanium nitride (SiGeN) with distributed charge storage elements is proposed in this work. A large memory window is observed due to the retainable dangling bonds inside the SiGeN gate stack layer. The nonvolatile memory device with the high-temperature oxidized SiGeN stack layer exhibits 2 V threshold voltage shift under 7 V write operation, which is sufficient for a memory device to define the signal "0" and "1." Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics.
Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers
(2006-03-13)
Hao, OY
;
Wu, YCS
;
Chiou, HH
;
Liu, CC
;
Cheng, JH
Electrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 degrees C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 degrees C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 degrees C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy. (c) 2006 American Institute of Physics.
Luminescence of selective area growth of epitaxial ZnO nanowires and random-growth-oriented nanobelts
(2006-03-14)
Hsu, HC
;
Cheng, HM
;
Wu, CY
;
Huang, HS
;
Lee, YC
Epitaxial ZnO nanowires and random-growth-oriented nanobelts were grown on c-plane sapphire with and without a pre-coated ZnO epilayer film. On the pre-coated ZnO epilayer, ZnO nanowires are vertically aligned with good in-plane alignment as a result of homoepitaxy, whereas on the bare c-plane sapphire, besides a few nanowires vertically aligned with [0001]znO parallel to [0001](Al2O3), the nanowires were properly aligned with three-fold rotation symmetry. The ZnO nanowires are well-defined hexagonal crystals with diameters of 70-500 nm and lengths of up to several micrometres. In the junction regions between the pre-coated epilayer and the bare sapphire surface, however, ZnO nanobelts (nanoribbons) were found. Cathodoluminescence measurements revealed that the emission at 3.26 eV is correlated with free-exciton recombination and the broad green emission at 2.48 eV is attributed to surface defects. The stronger green emission implies that more surface defects exist on the side walls of nanowires and nanobelts. In Raman scattering, the E1 (LO) mode is sensitive to the orientation of nanostructure that is consistent with the cathodoluminescence results.
管管作品五首
(2006-03-15)
管管
Generation of frequency tunable polarization entangled photon pairs
(2006-03-15)
Yabushita, A
;
Kobayashi, T
;
電子物理學系
;
Department of Electrophysics
Photon pairs with correlated frequencies from an optical parametric system were generated by a continuous wave pump focused on a type-II nonlinear crystal with polarization entanglement. The polarization entanglement of the frequency resolved photons was measured under several typical configurations. By optimizing a condition, the degree of polarization entanglement was improved substantially. We proposed the application of the system, which can be used as a light source of wavelength division multiplexing quantum key distribution, optimizing the configuration of the photon-pair generation. (c) 2006 American Institute of Physics.
Two-stage genetic programming (2SGP) for the credit scoring model
(2006-03-15)
Huang, JJ
;
Tzeng, GH
;
Ong, CS
;
運輸與物流管理系註：原交通所+運管所
;
科技管理研究所
Credit scoring models have been widely studied in the areas of statistics, machine learning, and artificial intelligence (AI). Many novel approaches such as artificial neural networks (ANNs), rough sets, or decision trees have been proposed to increase the accuracy of credit scoring models. Since an improvement in accuracy of a fraction of a percent might translate into significant savings, a more sophisticated model should be proposed for significantly improving the accuracy of the credit scoring models. In this paper, two-stage genetic programming (2SGP) is proposed to deal with the credit scoring problem by incorporating the advantages of the IF-THEN rules and the discriminant function. On the basis of the numerical results, we can conclude that 2SGP can provide the better accuracy than other models. (c) 2005 Published by Elsevier Inc.
Anti-inflammatory effect of Lactobacillus casei on Shigella-infected human intestinal epithelial cells. (vol 176, pg 1228, 2006)
(2006-03-15)
Tien, M. -T.
;
Girardin, S. E.
;
Regnault, B.
;
Le Bourhis, L.
;
Dillies, M. -A.
管管作品五首
(2006-03-15)
管管
管管作品五首
(2006-03-15)
管管
管管作品五首
(2006-03-15)
管管
Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application
(2006-03-15)
Hsieh, YC
;
Chang, EY
;
Yeh, SS
;
Chang, CW
;
Luo, GL
InGaP has high etching selectivity to GaAs. It can be used as the etch-stop layer to easily fabricate the InGaP/GaAs heterojunction bipolar transistors (HBTs). This process will also increase the uniformity and manufacturability of the HBT devices. However, the InGaP etch-stop layer will increase the energy barrier height that electrons have to overcome flowing from the collector to the subcollector, which will decrease the DC current gain of the device (T. Kobayashi, K. Taira, F. Nakamua, H. Kawai, J. Appl. Phys. 65 (1989) 4898). Therefore, the InGaP etch-stop layer has to be thin enough not to affect the device performance. But the spontaneous formation of the InxGa1-xAsyP1-y intermixing layer between GaAs/InGaP during the metal organic vapour-phase epitaxy (MOVPE) growth will affect the InGaP layer thickness needed as an effective etch-stop layer. In this paper, very thin InGaP layer was achieved with the suppression of InxGa1-xAsyP1-y formation by the optimization of the growth temperature and the gas switching sequence time. An effective 20 angstrom InGaP etch-stop layer was grown at 575 degrees C with interruption time of 3 s. Both STEM and PL data proved that the intermixing InxGa1-xAsyP1-y layer was eliminated and from the selective etching experiment, this 20 angstrom InGaP layer can stand 45 s etching by the H3PO4:H2O2:H2O = 1:1:20 solution. (c) 2005 Elsevier B.V. All rights reserved.
Optical characterization of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrates
(2006-03-15)
Ku, JT
;
Kuo, MC
;
Shen, JL
;
Chiu, KC
;
Yang, TH
Several approaches have been employed to grow high-quality ZnSe epilayers on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrates. The ZnSe epilayers were characterized by photoluminescence spectroscopy. Migration enhanced epitaxy and inserting an in situ thermal annealing ZnSe buffer layer effectively reduced the intensity of deep level emissions from the ZnSe epilayer grown on a 6 degrees-tilted Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrate. Optimized conditions for growing high-quality ZnSe were used to deposit ZnCdSe/ZnSe multiple quantum wells on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrates. Photoluminescence spectroscopy revealed quantum-confinement effect in the ZnCdSe multiple quantum wells. The evolution of the exciton emission peak energy and the linewidth as a function of temperature indicate a low density of localized sites in the sample with a well width of 1 nm. In the high-temperature regime, the thermal quenching of the excitonic emission intensity from ZnCdSe quantum well structures was governed by the thermal activation of carriers from quantum-well-confined states into barrier states. (c) 2006 American Institute of Physics.
Supermode-noise-free eighth-order femtosecond soliton from a backwar dark-optical-comb-injection mode-locked semiconductor optical amplifier fiber laser
(2006-03-15)
Lin, GR
;
Pan, CL
;
Chiu, IH
;
光電工程學系
;
Department of Photonics
A backward dark-optical-comb-injection mode-locked semiconductor optical amplifier fiber laser (SOAFL) with a femtosecond pulse width and an ultrahigh supermode-noise suppressing ratio (SMSR) is primarily demonstrated. The mode-locked SOAFL pulse with a spectral linewidth of 0.45 nm is shortened from 15 to 8.6 ps under chirp compensation in a 420 m long dispersion-compensated fiber, corresponding to a time-bandwidth product of 0.48. The eighth-order soliton is obtained by the nonlinearly soliton's compression of the chirp-compen sated SOAFL pulse in a 112 m long single-mode fiber at an input peak power of 51 W, providing the pulse width, the linewidth, and the nearly transform-limited time-bandwidth product are < 200 fs, 13.8 nm, and 0.34, respectively. The phase noise and integrated timing jitter at an offset frequency below 1 MHz are -105 dBc/Hz and 0.8 ps, respectively. An ultrahigh pulse-compression ratio of 43 and a SMSR of 87 dB for the eighth-order SOAFL soliton are reported. (c) 2006 Optical Society of America.
以離心方式製作奈米材料及所製得之奈米球及奈米線
(2006-03-16)
朝春光
;
郭金國
;
陳建中
;
陳蓉萱
本發明關於一種新穎的奈米材料製作方法，包括：(1)置一種或二種以上不同熔點之材料於具保溫效果的管材中並施以密閉封管；(2)抽真空使其處於真空之環境下，以阻止管材內之金屬於加熱時產生氧化；(3)將裝有該材料與奈米模板之真空封閉管材加熱至一種或二種以上材料熔點以上之溫度；(4)放入離心機系統，使其在不同的轉速操作或離心力之大小之條件下而形成奈米材料；依該方法所製得之奈米球、奈米線及奈米元件。
使用全像空間偏極模組之光學多埠循環器及其全像空間偏極模組
(2006-03-16)
蘇德欽
;
陳敬恒
本發明提供一種使用全像空間偏極模組之光學多埠循環器及其全像空間偏極模組，其係根據全像記錄材料特性和耦合波理論，提出一繞射式之全像空間偏離偏極器，用以取代傳統晶體式空間偏離偏極器，再提出全像空間偏極模組的設計，將之應用於3埠、4埠或多埠的光學循環器與光學隔離器的設計中。因此本發明具有偏極獨立、密集、高獨立、低偏極模色散和易於製作等優點，且埠的數目可容易的被增加。
具陣列式奈米孔洞之氧化鋁薄膜的製造方法
(2006-03-16)
朝春光
;
陳建仲
;
陳蓉萱
;
郭金國
本發明提出一種具陣列式奈米孔洞之氧化鋁薄膜的製造方法，首先提供一商用鋁基材，將商用鋁基材經過退火處理，再經過電解拋光處理，以使鋁基材表面呈現鏡面效果，並接著進行陽極處理，使鋁基材表面上形成一含有奈米級之數孔洞的氧化鋁薄膜，且孔洞呈現陣列式排列，再來進行熱處理，使鋁基材產生氧化反應，而使部分較小孔洞被產生氧化反應之氧化物因自我擴散效應填滿，使得孔洞均一化，最後再進行擴孔處理，以使孔洞擴張。本發明可簡化製程、便於控制製造過程之操作，並可在同時降低成本下，在氧化鋁薄膜上得出均一孔徑且具陣列式排列之奈米孔洞分佈。