Browsing by Issue Date, starting with "2006-06-29"

Now showing 1 - 20 of 63120

Evanescent-field optical amplifiers and lasers
(2006-06-29)
Chen, Nan-Kuang
;
Chi, Sien
;
Tseng, Shiao-Min
;
Lai, Yinchieh
An optical amplifier and a laser generator based on the fiber side-polished technology, having a high pumping efficiency, a low noise figure and a small footprint are provided in this application. The optical amplifier and the laser, which have a very long effective interaction length in conjunction with highly doped Erbium glass attached to its surface and an addition of a slanted fiber grating inscribed in the guiding core at the polished region can spatially separate the signal and pump power to simultaneously improve the pumping efficiency and optimize the penetrated depth of the signal evanescent-field. The spontaneous emission is kept from being amplified and therefore a high quality amplified signal is produced.
Phase transformations in a Cu-35 at.% Mn-25 at.% Al alloy
(2006-06-29)
Yang, SY
;
Liu, TF
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The phase transformations in the Cu-35 at.% Mn-25 at.% Al alloy have been investigated by means of transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometry (EDS). In as-quenched condition, the microstructure of the alloy was a mixture of (L2(1)+B2+L-J) phases. This is different from that observed by previous workers in the Cu3-xMnxAl alloys with x <= 1.0. When the as-quenched alloy was aged at 460 degrees C for short times, gamma-brass precipitates started to occur at anti-phase boundaries (APBs). After prolonged aging at 460 degrees C, the gamma-brass precipitates grew and beta-Mn precipitates were formed at the regions contiguous to the gamma-brass precipitates. The coexistence of (gamma-brass + beta-Mn) has never been observed by previous workers in Cu-Mn-Al alloy systems before. (c) 2005 Elsevier B.V. All rights reserved.
Interfacial reaction and shear strength of Pb-free SnAg2.5Cu0.86b0.5 and SnAg3.0Cu0.5Sb0.2 solder bumps on Au/Ni(P) metallization
(2006-06-29)
Hsu, YC
;
Huang, YM
;
Chen, C
;
Wang, H
;
材料科學與工程學系
This study investigates the metallurgical reaction and shear strength of Pb-free SnAg2.5Cu0.8Sb0.5 and SnAg3.0Cu0.5Sb0.2 solder bumps on Au/Ni(P) metallization pads. It is found that (Cu,Ni)(6)Sn-5 intermetallic compound (IMC) formed at the interface between the Sn2.5Ag0.8Cu0.5Sb solder and the metallization pad; whereas (Cu,Ni)(6)Sn-5 and (Ni,Cu)(3)Sn-4 IMCs formed when the SnAg3.0Cu0.5Sb0.2 reacted with the Au/Ni(P) metallization pad. The difference in the Cu concentration in the two solders may be responsible for the different interfacial IMC formation. The shear strengths for the SnAg2.5Cu0.8Sb0.5, SnAg3.0Cu0.5Sb0.2, SnAg3.0Cu0.5, and SnAg4.0Cu0.5 solders were also measured. The shear strength test revealed that the SnAg2.5Cu0.8Sb0.5 solder has the highest shear strength, which may be due to the solid-solution strengthening of the Sb atoms. (c) 2005 Elsevier B.V. All rights reserved.
A growing structure near the deformation front in SW Taiwan as deduced from SAR interferometry and geodetic observation
(2006-06-30)
Huang, Mong-Han
;
Hu, Jyr-Ching
;
Hsieh, Chia-Sheng
;
Ching, Kuo-En
;
Rau, Ruey-Juin
We apply the D-InSAR technique to monitor the active growing structure on the Tainan Tableland near the deformation front in SW Taiwan using ERS SAR images in the period of 1996 - 2000. Interferometric processing of six SAR images reveals the average slant range displacement (SRD) to be similar to 12.5 mm/yr, and it increases from the west edge of the Tainan Tableland and decreases across the Houchiali fault. The GPS campaign data indicate an average horizontal movement of 12 +/- 4 mm/yr in the direction of N44 degrees W for the Tainan Tableland with respect to the western coastline. Five precise leveling surveys across the Tainan Tableland over two years show an uplift rate of similar to 14 mm/yr for the benchmarks on the Tableland. By combining the horizontal velocity of GPS data and the SRD of D-InSAR we transfer the SRD into vertical deformation and discuss the deformation pattern and seismic hazards in the Tainan area.
Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells
(2006-07-01)
Lai, Fang-I
;
Kuo, S. Y.
;
Wang, J. S.
;
Kuo, H. C.
;
Wang, S. C.
A series of InGaAsN/GaAs single-quantum wells (SQWs) with N contents varied from 0% to 5.3% were grown by molecular-beam epitaxy using a solid As and a nitrogen plasma sources. The impact of nitrogen concentration on the optical properties, as determined by the temperature dependence of photoluminescence (PL), of a 6 nm SQW was investigated. In the low-temperature region, a pronounced temperature-dependent S-shaped peak position was observed in PL spectra while increasing the nitrogen concentration. Quenching behavior reveals that the defect-related nonradiative processes might be enhanced in the highly nitrogen incorporated samples and thus influence the recombination dynamics. In addition, the evolution of the peak position of the InGaAsN/GaAs samples was in agreement with the empirical Varshni model in the high-temperature region. A significant reduction in the temperature dependence of the emission peak position is analyzed as well, and further confirms the prediction of proposed band anticrossing model of the electronic structure of III-N-V alloys. (c) 2006 American Vacuum Society.
(PS)(2): protein structure prediction server
(2006-07-01)
Chen, Chih-Chieh
;
Hwang, Jenn-Kang
;
Yang, Jinn-Moon
;
生物科技學系
;
生物資訊及系統生物研究所
Protein structure prediction provides valuable insights into function, and comparative modeling is one of the most reliable methods to predict 3D structures directly from amino acid sequences. However, critical problems arise during the selection of the correct templates and the alignment of query sequences therewith. We have developed an automatic protein structure prediction server, (PS)(2), which uses an effective consensus strategy both in template selection, which combines PSI-BLAST and IMPALA, and target-template alignment integrating PSI-BLAST, IMPALA and T-Coffee. (PS)(2) was evaluated for 47 comparative modeling targets in CASP6 (Critical Assessment of Techniques for Protein Structure Prediction). For the benchmark dataset, the predictive performance of (PS)(2), based on the mean GTD_TS score, was superior to 10 other automatic servers. Our method is based solely on the consensus sequence and thus is considerably faster than other methods that rely on the additional structural consensus of templates. Our results show that (PS)(2), coupled with suitable consensus strategies and anew similarity score, can significantly improve structure prediction. Our approach should be useful in structure prediction and modeling. The (PS)(2) is available through the website at http://ps2.life.nctu.edu.tw/.
A power-aware motion estimation architecture using content-based subsampling
(2006-07-01)
Cheng, Hsien-Wen
;
Dung, Lan-Rong
;
電控工程研究所
;
Institute of Electrical and Control Engineering
This paper presents a novel power-aware motion estimation architecture for battery-powered multimedia devices. As the battery status changes, the proposed architecture adaptively performs graceful tradeoffs between power consumption and compression quality. The tradeoffs are considered to be graceful in that the proposed architecture is scalable with changing conditions and the compression quality is slightly degraded as the available energy is depleted. The key to such tradeoffs lies in a content-based subsample algorithm, first proposed in this paper. As the available energy decreases, the algorithm raises the subsample rate for maximizing the battery lifetime. Differently from the existing subsample algorithms, the content-based algorithm first extracts edge pixels from a macro-block and then subsamples the remaining low-frequency part. By doing so, we can alleviate the aliasing problem and, thus, limit the quality degradation as the subsample rate increases. Given a power consumption mode, the proposed architecture first performs edge extraction to generate a turn-off mask and then uses the turn-off mask to reduce the switch activities of processing elements (PEs) in a semi-systolic array. The reduction of switch activities results in significant power consumption savings. To achieve a high degree of scalability and qualified power-awareness, we use an adaptive control mechanism to set the threshold value for edge determination and make the reduction of switch activities rather stationary. As shown by experimental results, the architecture can dynamically operate in different power consumption modes with little quality degradation according to the remaining capacity of the battery pack while the power overhead of edge extraction is kept under 0.8%.
Effect of dispersant on preparation of colloidal magnetite nanocrystals
(2006-07-01)
Shauo, Chang-Neng
;
Chao, Chuen-Guang
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Nanometer scale magnetite particles were prepared in a very low concentration dispersing system with a dispersant. The average size of the particles prepared under optimum conditions was determined by transmission electron microscopy to be approximately 1.8 nm. The magnetic properties were investigated using a superconducting quantum interference device (SQUID) magnetometer. The dried samples exhibited approximately super-paramagnetic behavior. Rhelogical property measurement shows that the colloidal magnetite both with and without polyurethane reveals shear thinning. The surface morphology of the films of the magnetite nanoparticles on the glass, as shown by atomic force microscopy (AFM) images, produces well-formed surface structure's that are evenly spaced by the magnetite nanoparticles. It also shows that this is an effective method of surface modification for nanometer scale magnetite.
Non-lethal Candida albicans cph1/cph1 efg1/efg1 transcription factor mutant establishing restricted zone of infection in a mouse model of systemic infection
(2006-07-01)
Chen, C. G.
;
Yang, Y. L.
;
Cheng, H. H.
;
Su, C. L.
;
Huang, S. F.
The cph1/cph1 efg1/efg1andida albicans mutant cells were non-lethal in a mouse model of systemic infection. We investigated in vivo proliferation and invasion of C albicans cells in infected mice to elucidate the interaction between the host and the pathogen. Homogenates of kidneys from the mice infected with the wild-type and the mutant C albicans cells yielded a mean of 2.1 x 10(7)CFU/g and 2.2 x 10(6) CFU/g, respectively. The kidneys from the mice infected with the wild-type cells showed extensive renal cortical necrosis associated with neutrophilic infiltration. There were also wild-type hyphal cells present in abundance. Hence, tubular necrosis leading to renal failure in the mice may be the cause of death. Although the cph1/cph1 efg1/efg1 mutant cells were not lethal, they were capable of establishing restricted zones of infection and colonization near the renal pelvis instead of simply being cleared by the immune system in mice.
金門明朝一個小村裡的那顆梨花
(2006-07-01)
管管
Development of TDR penetrometer through theoretical and laboratory investigations: 1. Measurement of soil dielectric permittivity
(2006-07-01)
Lin, C. P.
;
Tang, S. H.
;
Chung, C. C.
;
交大名義發表
;
National Chiao Tung University
To better characterize a bulk soil electrically, both the electrical conductivity and dielectric permittivity should be measured. This study developed a time domain reflectometry (TDR) penetrometer to allow simultaneous measurements of dielectric permittivity and electrical conductivity during cone penetration. A TDR penetrometer is formed by placing a multiple-conductor waveguide around a nonconducting shaft. Probe design considerations and calibration methods for measuring dielectric constant were first theoretically discussed and then evaluated through laboratory investigations. A prototype TDR penetrometer was fabricated and used to perform simulated penetration tests in a calibration chamber. The effect of penetration disturbance on dielectric constant is quantitatively reported and explained. The implications of the data that can be measured by the TDR penetrometer are also discussed.
A polytope approach to the optimal assembly problem
(2006-07-01)
Hwang, Frank K.
;
Rothblum, Uriel G.
;
應用數學系
;
Department of Applied Mathematics
The problem of assembling components into series modules to maximize the system reliability has been intensively studied in the literature. Invariably, the methods employed exploit special properties of the reliability function through standard analytical optimization techniques. We propose a geometric approach by exploiting the assembly polytope - a polytope generated by the potential assembly configurations. The new approach yields simpler proofs of known results, as well as new results about systems where the number of components in a module is not fixed, but subject to lower and upper bounds.
Electrically tunable room-temperature 2 pi liquid crystal terahertz phase shifter
(2006-07-01)
Wu, Hsin-Ying
;
Hsieh, Cho-Fan
;
Tang, Tsung-Ta
;
Pan, Ru-Pin
;
Pan, Ci-Ling
Tunable phase shift up to 360 degrees at 1 THz is demonstrated using electrically controlled birefringence in a vertically aligned nematic liquid crystal (E7) cell, 1.83 mm in thickness. The driving voltage and corresponding field required for a phase shift of 360 degrees at 1 THz are 100 V and 90.5 V/cm, respectively.
Investigation of NiSi fully-silicided gate on SiO2 and HfO2 for applications in metal-oxide-semiconductor field-effect transistors
(2006-07-01)
Huang, Chih-Feng
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Effective work function modulation (phi(m,eff)) and the thermal/electrical stability of NiSi fully-silicided (FUSI) gates on SiO2 and HfO2 are investigated. A new method, implant-to-silicide, differing from the,pre-doped method, is used to realize Phi(m,eff) adjustments. The Phi(m,eff) of NiSi FUSI gates on SiO2 can be tuned by incorporating BF2+ or P+ dopants after silicidation. Nevertheless, the Fermi-pinning effect was observed in the NiSi/HfO2 gate which limits the Phi(m,eff) adjustment. A thin SiO2 interfacial layer can reduce the Fermi-pinning effect. A NiSi FUSI gate on SiO2 is thermally stable up to 600 degrees C. The thermal stress and impurity diffusion after a prolonged 600 degrees C annealing degraded the oxide integration. The temperature of the post-silicidation process should be as low as possible to lessen the thermal stress and impurity diffusion.
Extended Vogan diagrams
(2006-07-01)
Chuah, MK
;
Hu, CC
;
應用數學系
;
Department of Applied Mathematics
An extended Vogan diagram is an extended Dynkin diagram with a diagram involution, such that the vertices fixed by the involution can be painted or unpainted. Every extended Vogan diagram represents an almost compact real form of some affine Kac-Moody Lie algebra. Two diagrams may represent isomorphic algebras, and in this case we say that the diagrams are equivalent. In this paper, we classify the equivalence classes of extended Vogan diagrams, and provide a complete list of all diagrams within each class. It gives a combinatorial classification of the isomorphic classes of almost compact real forms of the affine Kac-Moody Lie algebras. (c) 2006 Elsevier Inc. All rights reserved.
一叢野櫻桃花站在我的雕堡的肩上
(2006-07-01)
管管
Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology
(2006-07-01)
Chen, SH
;
Ker, MD
;
電機學院
;
College of Electrical and Computer Engineering
Latchup failure which occurred at only one output pin of a power controller IC product is investigated in this work. The special design requirement of the internal circuits causes the parasitic diode that is inherent between the n-well and p-substrate to be a triggering source of the latchup, occurrence in this IC. The parasitic diode of the internal PMOS was easily turned on by an anomalous external signal to trigger the neighbor parasitic Silicon Controlled Rectifier (SCR) path which causes latchup event in the CMOS IC product. Some solutions to overcome this latchup failure have been also proposed in this paper. (c) 2005 Elsevier Ltd. All rights reserved.
Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation
(2006-07-01)
Chen, Jenn-Fang
;
Hsiao, Ru-Shang
;
Hsieh, Pei-Chen
;
Chen, Yu-Chih
;
Wang, Jyh-Shyang
Carrier distribution and defect induction in In0.34Ga0.66As0.98N0.02/GaAs-single quantum wells grown by molecular beam epitaxy at low growth rates are investigated by frequency-dependent capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The C-V studies show that lowering the growth rate of the InGaAsN layer splits the carrier accumulation in the well into a central and two side peaks with different frequency dispersions. The DLTS studies show that a continuum of states (0-0.083eV) and a,deep trap at 0.21-0.25eV are responsible for the central and the side peaks, respectively. A comparison with photoluminescence (PL) spectra shows that these defects are induced by composition fluctuation. Lowering the growth rate degrades composition fluctuation by segregating the material into an InGaAsN phase and an N-depleted phase. Post-growth annealing can remove the deep trap and improve the InGaAsN emission, confirming that the deep trap degrades the InGaAsN phase. The feature of the continuum of states suggests that it may be the structural defects associated with lattice expansion or localized states introduced by composition fluctuation.
Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains
(2006-07-01)
Hou, Chih-Yuan
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Thin-film transistors (TFFs) fabricated using (III) and 112) needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (mu(FE)), 4-fold-higher on/off current ratio (I-on/I-off), and 2.4-fold-lower leakage current (I-off) compared with those of the 111-TFT.
A dispatching rule for photolithography scheduling with an on-line rework strategy
(2006-07-01)
Sha, D. Y.
;
Hsu, S. Y.
;
Che, Z. H.
;
Chen, C. H.
;
工業工程與管理學系
Generally speaking, wafer fabrication factories define the photolithography area as the dispatching center of the entire factory. To establish a set of operative dispatching rules in the photolithography area while taking into consideration the rework of defective products would assist in coordinating and balancing the workload of the entire production line. Furthermore, it would help to enhance both the productivity and efficiency of the wafer fabrication, reduce the on-line WIP stock, shorten the production cycle time, and satisfy the requirements of customers regarding production due time and product quality. This research uses on-line rework as the basis for bringing the factor of reworking of a batch process into the dispatching rule for measurement. It then develops the dispatching rule (Rw-DR) which includes the rework strategy. In addition, this research focuses on the batch with high finished proportion in the photolithography area for finding a way to complete the manufacturing procedure faster, lighten the machine workload of the waiting line, and at the same time increase the output quantity. (c) 2006 Elsevier Ltd. All rights reserved.