Browsing by Issue Date, starting with "2006-11-23"

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Method for sequentially writing fiber bragg grating by using real-time side-diffraction optical fiber position monitoring
(2006-11-23)
Hsu, Kuei-Chu
;
Sheu, Lih-Gen
;
Chuang, Kai-Ping
;
Chang, Shu-Hui
;
Lai, Yinchieh
The present invention provides a fiber Bragg Grating sequential writing method with real-time optical fiber position monitoring, characterized in that the relative phase between a fiber grating and a writing interference beam at each positioning point is determined by an interferometric side-diffraction method, and writing is sequentially performed. Accuracy in fabricating a long and complex fiber grating structure can be increased by decreasing or avoiding accumulative errors caused by long-term scan of monitoring optical fiber position, or by a means for fabricating a wanted reference fiber Bragg grating with similar settings.
Method and apparatus for selecting intra prediction mode
(2006-11-23)
Cheng, Chao-chung
;
Chang, Tian-sheuan
;
Tsai, Chi-ken
A method for selecting intra prediction mode includes: calculating an error value for each of the prediction modes in a first group, wherein the first group includes two prediction modes where an included angle between their prediction directions is the largest; calculating an error value for each of the prediction modes in a second group, wherein the prediction modes in the second group refer to the prediction modes with prediction directions near the two sides of the prediction direction of the prediction mode with smaller error value in the first group; calculating an error value for the prediction mode in a third group, wherein the prediction mode in the third group is the prediction mode with prediction direction adjacent to the prediction direction of the prediction mode with smaller error value in the second group; calculating a DC prediction mode in the plurality of prediction modes; and among the prediction modes with calculated error values, selecting a prediction mode with a smallest error value to be the intra prediction mode for encoding the subblock.
Dual-mode high throughput de-blocking filter
(2006-11-23)
Lee, Chen-Yi
;
Liu, Tsu-Ming
This invention provides the unique and high-throughput architecture for multiple video standards. Particularly, we propose a novel scheme to integrate the standard in-loop filter and the informative post-loop filter. Due to the non-standardization of post filter, it provides high freedom to develop a certain suitable algorithm for the integration with loop-filter. We modify the post filter algorithm to make a compromise between hardware integration complexity and performance loss. Further, we propose a hybrid scheduling to reduce the processing cycles and improve the system throughput. The main idea is that we use four pixel buffers to keep the intermediate pixel value and perform the horizontal and vertical filtering process in one hybrid scheduling flow. In our approach, we reduce processing cycles, and the synthesized gate counts are very small. Meanwhile, the synthesized results also indicate lower cost for hardware.
Deblocking filtering method used on video encoding/decoding and apparatus thereof
(2006-11-23)
Cheng, Chao-chung
;
Chang, Tian-sheuan
;
Lin, Tien-hung
A deblocking filtering method used on video encoding/decoding includes: sequentially reading the subblocks adjacent to a vertical edge according to a deblocking direction, and performing a deblocking process on the vertical edge; performing a transposition on the pixel data of a current subblock; performing the deblocking process on a parallel edge of the current subblock, and outputting the pixel data of another subblock adjacent to the parallel edge after transposition; sequentially storing a plurality of current subblocks; transposing and outputting the pixel data of the plurality of current subblocks after completion of the deblocking of the current macroblock.
A computational study on the decomposition of NH4ClO4: Comparison of the gas-phase and condensed-phase results
(2006-11-24)
Zhu, R. S.
;
Lin, M. C.
;
交大名義發表
;
National Chiao Tung University
The decomposition of NH4ClO4 (AP) in both gaseous and condensed phases has been studied at the CCSD(T)/6-311 + G(3df,2p)// B3LYP/6-311 + G(3df,2p) level. Formation of NH3 + HClO3 is the main channel in the gas phase with 14.2 kcal/mol enthalpy change. In solution, the enthalpy change for this channel is 29.5 kcal/mol, which is close to the sublimation activation energy, similar to 30 kcal/mol in crystalline AP. Formation of H3N-HO +ClO3 has higher enthalpy changes, 56.3 kcal/mol and 77.1 kcal/mol in the gas phase and in solution, respectively. Strong solvent effects may exist in the AP decomposition reaction. (c) 2006 Elsevier B.V. All rights reserved.
Characterization of the type 3 fimbriae with different MrkD adhesins: Possible role of the MrkD containing an RGD motif
(2006-11-24)
Huang, Ying-Jung
;
Wu, Chien-Chen
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Chen, Mei-Chen
;
Fung, Chang-Phone
;
Peng, Hwei-Ling
Four novel mrkD alleles namely mrkD(V1), mrkD(V2), mrkD(V3), and mrkD(V4) were identified in seventeen Klebsiella pneuntoniae meningitis strains using PCR-RFLP and sequence determination. Comparative analysis revealed a most variable region containing an RGD motif in the receptor domain of MrkD(V3). In order to determine if the sequence confers the K pneumoniae mrkD(V3) the highest level of the fimbrial activity, a type 3 fimbriae display system was constructed in Escherichia coli. The E coli JM 109[pmrkABCD(V3)F] displaying meshwork-like fimbriae also had the most fimbrial activity, supporting a possible role of the varied sequences. In a dose-dependent manner, the GRGDSP hexapeptide appeared to inhibit the adhesion of the E. coli JM109[pmrkABCD(V3)F] to HCT-8, an ileocecal epithelial cell line. In addition, the adhesion activity was reduced by the addition of anti-alpha 5 beta 1 integrin monoclonal antibody, indicating that the RGD containing region in MrkD(V3) is responsible for the binding of type 3 fimbriae to integrin. (c) 2006 Elsevier Inc. All rights reserved.
Composite lattice pattern formation in a wide-aperture thin-slice solid-state laser with imperfect reflective ends
(2006-11-24)
Otsuka, Kenju
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Miyasaka, Yoshihiko
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Narita, Tatsuro
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Chu, Shu-n Chu
;
Lin, Chi-Ching
We observed self-formations of multiple lasing channels and two-dimensional lasing patterns consisting of composite local modes having different lasing frequencies in a laser-diode-pumped wide-aperture thin-slice solid-state laser with imperfect reflective end surfaces. Global patterns resembling higher-order Hermite-Gaussian modes or possessing N-fold rotational symmetries were experimentally shown to appear due to the standard polished surface roughness of closely spaced reflective ends and nonlinear modal interactions.
Field emission characteristics of chromium carbide capped carbon nanotips
(2006-11-25)
Hsu, C. H.
;
Chen, C. F.
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Lo, H. C.
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材料科學與工程學系
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Department of Materials Science and Engineering
In this study, field emission characteristics of two carbon based nanomaterials, carbon nanotips and chromium carbide capped carbon nanotips, were discussed. Both of these materials were synthesized by bias-assisted microwave plasma chemical vapor deposition with hydrogen and methane as reactants. Ultra-sharpness of the carbon nanotips and the composite structure of chromium carbide capped carbon nanotips have shown unique structural and electrical properties. I-V measurements were carried out to investigate the field emission characteristics. The chromium carbide capped carbon nanotips showed superior field emission stability compared to carbon nanotips under constant current emission. (c) 2006 Elsevier B.V. All rights reserved.
High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
(2006-11-25)
Chen, Shih-Ching
;
Chang, Ting-Chang
;
Liu, Po-Tsun
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Wu, Y. C.
;
Tsai, C. C.
This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect. (c) 2006 Elsevier B.V. All rights reserved.
Statistical study on the states in the low-temperature poly-silicon films with thin film transistors
(2006-11-25)
Huang, Shih-Che
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Chou, Yen-Pang
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Tai, Ya-Hsiang
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光電工程學系
;
顯示科技研究所
Laser recrystallized low temperature poly-silicon films have attracted attention for their applications in thin-film transistors (TFTs), which are widely used in active matrix displays. The electrical characteristics of the poly-silicon film may vary because of its grain boundaries. In this work, the variation is statistically studied with respect to the threshold voltage and mobility of the TFTs. The threshold voltage and mobility of many closely-located TFTs are measured. These two parameters correspond to the deep states and tail states of the poly-silicon film, respectively. The mutual difference of two threshold voltages exhibits the distribution in a Gaussian-Lorentzian cross product form. On the other hand, the mutual difference of two mobility exhibits the distribution of Lorentzian function. This result directly reflects the local fluctuations and the spatial trends of the deep and tail states in a poly-silicon film. (c) 2006 Elsevier B.V. All rights reserved.
Study on electrical degradation of p-type low-temperature polycrystalline silicon thin film transistors with C-V measurement analysis
(2006-11-25)
Huang, Shih-Che
;
Kao, Yu-Han
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Tai, Ya-Hsiang
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光電工程學系
;
顯示科技研究所
Laser recrystallized low-temperature poly-silicon (LTPS) films have attracted attention for their application in thin-film transistors (TFTs), which are widely used in active matrix display. However, the degradation behavior of p-type LTPS TFTs is not quite clarified yet. In this paper, the instability mechanisms of p-channel LTPS TFTs under DC bias stress have been investigated. From the IV transfer curves, it was observed that LTPS TFT's mobility increases after stress at some bias conditions. This degradation is most likely caused by interface traps between the poly-Si thin film and the gate insulator, as well as the damaged junction of the drain from stress. In this work, the assumption is examined via C-V measurement. It is found that the C-GD curves of the stressed TFT slightly increase for the gate voltage smaller than the flat band voltage V-FB. However, the C-Gs curves of the stressed device are almost the same as those before stress. By employing simulation, it is found that the degradation of p-type TFTs under this stress condition is mainly caused by the trapped charges at the interface between the gate and the drain region, which is generated by the high voltage difference applied during DC bias stress. (c) 2006 Elsevier B.V. All rights reserved.
Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films
(2006-11-25)
Bai, S. N.
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Tseng, T. Y.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
A systematic study of the influence of alumina (Al2O3) doping on the optical, electrical, and structural characteristics of sputtered ZnO thin films is reported in this study. The ZnO thin films were prepared on 1737F Coming glass substrates by R.F. magnetron sputtering from a ZnO target mixed with Al2O3 of 0-4 wt.%. X-ray diffraction (XRD) analysis demonstrates that the ZnO thin films with Al2O3 of 0-4 wt.% have a highly (002) preferred orientation with only one intense diffraction peak with a full width at half maximum (FWEM) less than 0.5 degrees. The electrical properties of the Al2O3-doped ZnO thin films appear to be strongly dependent on the Al2O3 concentration. The resistivity of the films decreases from 74 Omega(.)cm to 2.2 x 10(-3) Omega(.)cm as the Al2O3 content increases from 0 to 4 wt.%. The optical transmittance of the Al2O3-doped ZnO thin films is studied as a function of wavelength in the range 200-800 nm. It exhibits high transparency in the visible-NIR wavelength region with some interference fringes and sharp ultraviolet absorption edges. The optical bandgap of the Al2O3-doped ZnO thin films show a short-wavelength shift with increasing of Al2O3 content. (c) 2006 Elsevier B.V. All rights reserved.
Synthesis and thermal decomposition of Zn(tda)H2O [tda = S(CH2COO)(2)(2-)]
(2006-11-27)
Wu, Ming-Cheng
;
Lee, Chi-Shen
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應用化學系
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應用化學系分子科學碩博班
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Department of Applied Chemistry
A novel two-dimensional coordination polymer Zn(tda)H2O [tda = S(CH2COO)(2)(2-)] was synthesized under hydrothermal conditions. The compound crystallized in monoclinic space group P2(1) with a = 16.4154(17) angstrom, b = 5.2133(6) angstrom, c = 16.4210(17) angstrom, beta = 114.165(2)degrees, V = 1282.1(2) angstrom(3), and Z = 8. The structure features two-dimensional, noncentrosymmetric networks with a pseudohexagonal network of Zn2+ coordinated by tda and water molecules. Zn(tda)H2O decomposed at T > 300 degrees C to form a ZnO sponge with a surface area similar to 40 m(2)/g, which makes it an attractive precursor for nanoporous ZnO.
30 nm resolution x-ray imaging at 8 keV using third order diffraction of a zone plate lens objective in a transmission microscope
(2006-11-27)
Yin, Gung-Chian
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Song, Yen-Fang
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Tang, Mau-Tsu
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Chen, Fu-Rong
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Liang, Keng S.
A hard x-ray transmission microscope with 30 nm spatial resolution has been developed employing the third diffraction order of a zone plate objective. The microscope utilizes a capillary type condenser with suitable surface figure to generate a hollow cone illumination which is matched in illumination range to the numerical aperture of the third order diffraction of a zone plate with an outmost zone width of 50 nm. Using a test sample of a 150 nm thick gold spoke pattern with finest half-pitch of 30 nm, the authors obtained x-ray images with 30 nm resolution at 8 keV x-ray energy. (c) 2006 American Institute of Physics.
Chemical vapour deposition of oriented diamond nanocrystallites by a bias-enhanced nucleation method
(2006-11-28)
Yan, Jhih-Kun
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Chang, Li
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材料科學與工程學系
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Department of Materials Science and Engineering
A microwave plasma chemical vapour deposition (MPCVD) system has been used to deposit nanometre-sized single-crystalline diamonds on 1 x 1 cm(2) Si(100) substrates. The distribution of deposited diamonds has good uniformity over the whole Si substrate surface by using a dome-shaped Mo anode which allows the application of bias-enhanced nucleation. The morphology and crystallinity of the deposits on Si were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) with electron diffraction and lattice images. SEM and TEM observations show that oriented diamond nuclei as single crystals with facets can form on self-formed Si cones through epitaxial SiC within a short bias period. After a longer bias time, it has been observed that polycrystalline diamonds formed as a result of secondary nucleation.
选择内部编码的预测模式的方法及其装置
(2006-11-29)
郑朝钟
;
张添烜
;
蔡志侃
一种选择内部编码的预测模式的方法包含计算多个预测模式中第一族群中的预测模式的误差值，该第一族群包含两个其预测方向的夹角为最大的该预测模式；计算第二族群中的预测模式的误差值，该第二族群的预测模式是指其预测方向靠近该第一族群中误差值较小者的预测方向两侧的预测模式；计算第三族群中的预测模式的误差值，该第三族群的预测模式是指其预测方向相邻于该第二族群中误差值较小者的预测方向的预测模式；计算多个预测模式中的直流预测模式的误差值；以及选择已计算过误差值的预测模式中误差值最小者作为将子块编码的预测模式。
应用于视频编码/解码的解块滤波方法及其装置
(2006-11-29)
郑朝钟
;
张添烜
;
林天虹
一种应用于视频编码/解码的解块滤波方法，其步骤包含依据一解块方向，依序读取相邻于一垂直边界的该子块，并对该垂直边界进行该解块处理；将一目前子块的像素数据进行转置；对该目前子块的一平行边界进行该解块处理，相邻于该平行边界的另一子块的像素数据则转置后输出；依序储存多个该目前子块；以及在该目前宏块的解块处理完成后，将该多个目前子块的像素数据转置输出。
Laser-ablated fiber devices and method of manufacturing the same
(2006-11-30)
Chi, Sien
;
Chen, Nan-Kuang
A manufacturing method of a laser-ablated fiber device is proposed. The fiber cladding is removed by laser beam until the evanescent field is accessed. The depth of ablation is controlled by measuring the distance between the interference fringes of the laser. The effective interaction length is tuned by varying the radius of curvature of the fiber. The ablated fibers are mated to act as a fiber coupler. Subsequently, the interaction region is fused or fused-tapered to make a fiber coupler, an add/drop multiplexer, a fiber filter, etc.
Method of symbol detection for MIMO dual-signaling uplink CDMA systems
(2006-11-30)
Ho, Chung-Lien
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Wu, Jwo-Yuh
;
Lee, Ta-Sung
The invention provides a block V-BLAST detection algorithm for a general multi-input multi-output CDMA system over the frequency-selective channels, in which each user's data stream can be either orthogonal space-time block encoded for transmit diversity or spatially multiplexed for high spectral efficiency according to the channel conditions. For such the considered dual-signaling system, the receiver could suffer from the large dimension data processing. A two-stage group V-BLAST detection algorithm is thus proposed to further reduce the computational complexity.
ESD-protection design with extra low-leakage-current diode string for RF circuits in SiGeBiCMOS process
(2006-12-01)
Ker, Ming-Dou
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Hsiao, Yuan-Wen
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Wu, Woei-Lin
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電機學院
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College of Electrical and Computer Engineering
Two low-leakage resistor-shunted diode strings Eire developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes.