Browsing by Issue Date, starting with "2006-12-16"

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高產量管線式快速傅立葉轉換處理器
(2006-12-16)
李鎮宜
;
林昱偉
本案提出一種應用於超寬頻(UWB)系統的管線快速傅立葉轉換(FFT)處理器，包括：用以實行根–2(radix–2)FFT演算的一第一模組、用以實行根–8FFT演算的一第二模組、用以實行根–8FFT演算的一第三模組、複數個共軛區塊(conjugateblocks)、一除法區塊以及複數個多工器。所提出之被稱為混合根多路徑延遲迴授(Mixed–RadixMulti–PathDelayFeedback)的管線FFT結構係藉由使用多資料路徑配置而能夠提供較高的產量率，本案之處理器係使用高根FFT演算法以降低複雜之乘法演算的數目。
動態頻率計數之全數位倍頻器
(2006-12-16)
李鎮宜
;
陳寶龍
本發明係揭露一種動態頻率計數之全數位倍頻器，其係利用動態頻率計數的方式來計算及調整數位式震盪器的輸出頻率，且為了簡化硬體架構，更採用2的次方來進行運算；而習知之可程式除頻器及相頻偵測器則被簡單之漣波計數器所取代，且於作為DCO輸出時序計數器之漣波計數器中取值的方式係區分為商數值Q與餘數值R的方式，而非直接讀取整數值。由於本發明採用動態時間方式計算，使得頻率解析度得以提高，對於輸出頻率亦具有較低的抖動量。
異次投影硬性決定色彩內插法
(2006-12-16)
蔡奇謚
;
宋開泰
本發明提供一種異次投影硬性決定色彩內插法(Heterogeneity–ProjectionHard–Decision,HPHD)，其係使用異次投影去估測最佳的邊緣方向後，再使用硬性決定規則去決定最佳的內插方向，得到綠色色彩元素資訊，再利用綠色色彩元素資訊，經由綠色色彩元素平面之高頻資訊加入紅色與藍色色彩元素平面處理程序，來降低紅色與藍色色彩元素平面的重建誤差。因此本發明可達到降低內插方向發生錯誤的情況，並且在信號雜訊比(PeakSignaltoNoiseRatio,PSNR)與視覺比較上可獲得更好的效果。
近場光纖探針
(2006-12-16)
趙遠鳳
;
楊宗哲
;
蔡定平
本創作係一近場光纖探針，藉由改良傳統式裸光纖探針式鍍金屬膜光纖探針的收光或送光特性，經由適當比例的鍍膜於裸光纖探針上，使增強其光纖探針的收光或送光的通光效率，可擴展應用至電子束及微顯影技術應用於半導體之精密製程的應用上。
Highly efficient deep blue organic electroluminescent device based on 1-methyl-9,10-di(1-naphthyl)anthracene
(2006-12-18)
Ho, Meng-Huan
;
Wu, Yao-Shan
;
Wen, Shih-Wen
;
Lee, Meng-Ting
;
Chen, Teng-Ming
The author have developed 2-methyl-9,10-di(1-naphthyl)anthracene (alpha,alpha-MADN) as an effective wide band gap host material for Forster energy transfer to the unsymmetrical mono(styryl)amine deep blue fluorescent dopant (BD-1). This guest/host emitting system, at the optimal doping concentration of 3%, can also increase the probability of carrier recombination near the hole-transport/emitting layer interface for the blue organic light emitting device which produces electroluminescence efficiencies of 3.3 cd/A and 1.3 lm/W and a deep blue CIEx,y color coordinates of (0.15, 0.13) that are 50% better than those of the traditional beta,beta-isomeric host (MADN) with the same dopant. (c) 2006 American Institute of Physics.
Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)(2)](4)
(2006-12-18)
Chou, Yi-Hsuan
;
Chiu, Hsin-Tien
;
Kuo, Teng-Fang
;
Chi, Cheng-Chung
;
Chuang, Shiow-Huey
Hafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)(2)](4). The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties were investigated. The x-ray photoelectron spectroscope analysis unveiled that the composition of the films is HfOxNy. In addition, the films after the rapid-thermal annealing treatments at various temperatures revealed salient features in their physical properties, such as capacitance and conductivity. On this basis, the feasibility of using the HfOxNy layers as high-k dielectrics in complementary metal oxide semiconductor transistors was also discussed. (c) 2006 American Institute of Physics.
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
(2006-12-18)
Wang, Te-Chung
;
Lu, Tien-Chang
;
Ko, Tsung-Shine
;
Kuo, Hao-Chung
;
Yu, Min
The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on trenched a-plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3x10(7) cm(-2) on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 mu m thick. (c) 2006 American Institute of Physics.
Sol-gel-derived double-layered nanocrystal memory
(2006-12-18)
Ko, Fu-Hsiang
;
You, Hsin-Chiang
;
Lei, Tan-Fu
;
材料科學與工程學系奈米科技碩博班
;
電子工程學系及電子研究所
The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900 degrees C for 1 min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior V-th shifting because of the higher probability for trapping the charge carrier. (c) 2006 American Institute of Physics.
MO(CO)(6)-mediated synthesis of calix[4]arenes carrying beta-hydroxy ketones or alpha,beta-unsaturated-beta-amino ketones
(2006-12-18)
Senthilvelan, Annamalai
;
Tsai, Ming-Tsung
;
Chang, Kai-Chi
;
Chung, Wen-Sheng
;
應用化學系
MO(CO)(6)-mediated ring opening reactions of calix[4]arene isoxazolines/isoxazoles provide a new synthetic methodology for calix[4]arenes carrying bifunctional beta-hydroxy ketones or alpha,beta-unsaturated-beta-amino ketones. MO(CO)(6) is a highly selective and convenient reagent for the ring opening process of these supramolecular isoxazolines/isoxazoles. (c) 2006 Elsevier Ltd. All rights reserved.
Highly power efficient organic light-emitting diodes with a p-doping layer
(2006-12-18)
Chang, Chan-Ching
;
Hsieh, Ming-Ta
;
Chen, Jenn-Fang
;
Hwang, Shiao-Wen
;
Chen, Chin H.
In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4('),4(')-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2-TNATA) to replace the volatile tetrafluro-tetracyanoquinodimethane. The authors propose the 2-TNATA:WO3 composition functions as a p-doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8-quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m(2). (c) 2006 American Institute of Physics.
Fractal aggregates of conjugated polymer in solution state
(2006-12-19)
Li, Yen-Cheng
;
Chen, Kuei-Bai
;
Chen, Hsin-Lung
;
Hsu, Chain-Shu
;
Tsao, Cheng-Si
Semirigid conjugated polymers have received much scientific and technological interest due to their unique electrical and photonic semiconducting properties. Spectroscopic studies have indicated that these polymers underwent interchain aggregation in the solution state even at large dilution; however, the origin of this event and the structure of the resultant aggregates remained the crucial issues to be resolved. In the present study, we revealed that the interchain aggregation of a conjugated polymer, poly(2,3-diphenyl-5-hexyl-1,4-phenylenevinylene) (DP6-PPV), in solutions with chloroform and toluene generated network aggregates with the hydrodynamic radii of several micrometers. Small angle neutron scattering (SANS) demonstrated that the internal structure of these aggregates could be characterized by the mass fractal dimensions of 2.2-2.7. The networks were looser in chloroform but became highly compact in the poorer toluene solvent due to severe segmental association. Increasing the temperature alleviated the segmental association in toluene while largely retaining the mass fractal dimension of the aggregates. However, the interchain aggregation was never completely dissipated by the heating, suggesting the existence of two types of segmental association with distinct stability. The highly stable segmental association that could neither be solvated by chloroform nor be disrupted thermally in toluene was attributed to the d-d complex already present in the DP6-PPV powder used for the solution preparation. The chains tied firmly by this complex formed network aggregates in the solution and hence reduced the entropy of mixing of the polymer. In the poorer toluene solvent, further segmental association took place within the preexisting aggregates, making the networks more compact. This type of segmental association could be disrupted by moderate heating, and its occurrence was ascribed to the poor affinity of the aliphatic side chains of DP6-PPV for toluene.
Thermal stability and electric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with nano-Cr interlayer
(2006-12-20)
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
Chang, Li-Chun
;
Chou, Chen-Chia
;
Liou, Bo-Heng
A novel sandwich structure of Ba0.7Sr0.3TiO3/Cr/Ba0.7Sr0.3TiO3 (BST/Cr/BST) was sputtered onto Pt/Ti/SiO2/Si substrate. With the insertion of a Cr layer, the leakage currents are decreased and the thermal stability of the specimens is enhanced. Temperature coefficient of capacitance (TCC) of specimens with BST(200 nm)/Cr(2 nm)/BST(200 nm) multifilms can achieve about 83% lower than those with BST (400 nm) monolayer. However, the dielectric constant of the BST(200 nm)/Cr(2 nm)/BST(200 nm) multifilms decreases to about 37% of that BST monolayer. The leakage current densities under an electric field of 125 kV/cm at 90 degrees C are 4 x 10(-4) A/cm(2) and 9 x 10(-1) A/cm(2) for BST(200 nm)/Cr(2 nm)/BST(200 nm) and monolayer BST (400 nm), respectively. X-ray diffraction results indicate the formation of a CrO3 secondary phase after annealing at 700 degrees C or above in O-2 atmosphere. The root causes for the improvement of leakage currents and thermal stability with the insertion of nano-Cr interlayer are explored. The results show the insertion of Cr-nanolayer improves the electric properties for application in capacitors. (c) 2006 Elsevier B.V All rights reserved.
監控薄膜厚度變化之方法
(2006-12-21)
趙于飛
;
王夢偉
;
郭俊儀
;
柳克強
;
林滄浪
本發明係揭露一種監控薄膜厚度變化之方法，係用於一相位調變式橢圓儀。此方法包含經由相位調變式橢圓儀及一訊號擷取系統獲得一薄膜之一直流訊號、一一倍頻及一二倍頻訊號，並將前述之訊號傳遞至一電腦裝置。再經由電腦裝置之一如儀控程式之程式以換算前述之訊號得到一橢圓參數。接著，引入橢圓參數以計算薄膜之一厚度週期解，並利用一數據化之一二維厚度表示法即時監控薄膜之厚度週期解的變化。同時，透過程式呈現此方法之一監控畫面於電腦裝置之一顯示單元上。
在網路通道閘道器上提供差別服務之請求排程方法
(2006-12-21)
林盈達
;
曹世強
;
歐陽銘康
;
賴源正
本發明提供一種在網路通道閘道器上提供差別服務之請求排程方法，其係根據「請求封包」的三個參數：反應封包大小、反應封包傳輸時間、反應封包回應延遲，計算出請求封包對應的反應封包在連線網路中所佔用的頻寬，然後透過控制類別中請求封包的送出頻率，以提供公平而且可分享的頻寬，以及在維持高頻寬使用率下，降低接取路徑上發生封包碰撞的可能性。因此本發明可用在企業端網路通道閘道器上進行頻寬管理，以提供使用者間有差別且可分享的服務待遇，並且可以有效降低系統負載。
光交換器監控裝置
(2006-12-21)
祈甡
;
李健仲
;
高大峻
一種光交換器監控裝置，包含：一監控信號產生器、一路徑選擇電路、一監控信號接收器以及一光交換器；主要係藉監控信號產生器中的光延遲模組產生不同時間延遲差之光脈波串列來當作監測信號，而在監控信號接收器中也有一個光延遲模組再次產生不同時間差之光脈波可以用來識別光交換器的光路徑是否有異常，而藉由路徑選擇電路跳過有問題的光路徑，並選擇其他適當光路徑者。
使用者介面產生系統及其方法
(2006-12-21)
陳登吉
;
楊尚庭
;
蔡明志
;
洪啟彰
本發明係揭露一種使用者介面產生系統及其方法，此使用者介面產生系統及其方法係用於手持裝置，本系統至少包含一工作平台、一圖形介面資料庫及一樣板資料庫。圖形介面資料庫係用於產生一預設圖形介面且於工作平台上產生一預設關聯特性，並由樣板資料庫所記錄，形成一使用者介面樣板，再經由工作平台之彙整動作後產生可供手持裝置所使用之一使用者介面程式。此使用者介面產生系統之特色在於使用者介面設計者透過創造使用者介面樣板以設計使用者介面，並可重覆使用而無需程式設計者輔助撰寫程式，降低使用者介面設計者與程式設計者間之漫長溝通。
由金氧半場效電晶體臨界電壓與熱效應電壓所組成之參考電壓電路
(2006-12-21)
洪崇智
本發明係揭露一種由金氧半場效電晶體臨界電壓與熱效應電壓所組成之參考電壓電路。本發明以現有的能隙電壓架構為基礎，並使用了工作於弱反轉層的場效電晶體代替傳統的雙載子電晶體，以產生與溫度係數正相關之電流，再由金氧半場效電晶體臨界電壓產生另一與溫度係數負相關之電流，結合以上兩個電流而產生一不隨溫度變化而改變之穩定參考電流，再將此電流通過一電阻，以產生一與溫度係數完全不相關之參考電壓。
Investigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopy
(2006-12-25)
Chiu, S. H.
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
X-ray microscopy was employed to investigate void nucleation and propagation during electromigration in solder joints. The shape of the voids at various stages can be clearly observed. The voids became irregular when they propagated to deplete the contact opening. Growth velocity at the early stage was found to be 1.3 mu m/h under 6.5x10(3) A/cm(2) at 150 degrees C, and it decreased to 0.3 mu m/h at later stages. Formation of intermetallic compound (IMC) and compositional changes at the interface of solder/IMC on the chip side were attributed to the retarded growth rate at later stages. (c) 2006 American Institute of Physics.
Photoluminescence studies of type-II diluted magnetic semiconductor ZnMnTe/ZnSe quantum dots
(2006-12-25)
Kuo, M. C.
;
Hsu, J. S.
;
Shen, J. L.
;
Chiu, K. C.
;
Fan, W. C.
Type-II diluted magnetic semiconductor ZnMnTe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy were investigated by conventional and magnetophotoluminescence (PL) spectroscopy. The QD emission exhibits a type-II characteristic in excitation power dependence of PL peak energy. A nonzero circular polarization of PL at the absence of magnetic field was observed. This phenomenon is attributed to the accumulation of interface charges confined in adjacent layers. The magneto-optical measurement demonstrates a magnetic-induced degree of circular polarization in the PL spectra, indicating the Mn incorporation into the QD system. (c) 2006 American Institute of Physics.
Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy
(2006-12-25)
Ke, W. C.
;
Lee, L.
;
Chen, C. Y.
;
Tsai, W. C.
;
Chang, W. -H.
Structural and photoluminescence (PL) properties of InN dots grown on GaN by metal organic vapor phase epitaxy using the flow-rate modulation technique, and their dependence on growth conditions, were investigated. An ammonia (NH3) background flow was intentionally supplied during indium deposition periods to control the kinetics of adatoms and hence the morphology of InN dots. Samples prepared under lower NH3 background flows generally exhibit narrower and more intense PL signals peaked at lower emission energies. The authors point out that the NH3 background flow is an important parameter that controls not only the nucleation process but also the emission property of InN dots. (c) 2006 American Institute of Physics.